Abstract: An electro-optic device includes a semiconducting layer in which is formed a waveguide, a modulator formed across the waveguide comprising a p-doped region to one side and an n-doped region to the other side of the waveguide, wherein at least one of the doped regions extends from the base of a recess formed in the semiconducting layer. In this way, the doped regions can extend further into the semiconducting layer and further hinder escape of charge carriers without the need to increase the diffusion distance of the dopant and incur an additional thermal burden on the device. In an SOI device, the doped region can extend to the insulating layer. Ideally, both the p and n-doped regions extend from the base of a recess, but this may be unnecessary in some designs. Insulating layers can be used to ensure that dopant extends from the base of the recess only, giving a more clearly defined doped region.

Abstract: A thermo-optic semiconductor device has one semiconductor region providing an optical waveguide and an adjacent semiconductor region providing a resistive heater between two doped regions, current may be passed through the resistive heater within the adjacent semiconductor region to heat it and thereby vary the optical characteristics of the waveguide.

Abstract: An electro-optic device is disclosed for altering the density of charge carriers within an integrated optical waveguide. The device includes a substrate, and an integrated optical waveguide extending across the substrate with two doped regions being provided such that an electrical signal can be applied across the doped regions to alter the density of charge carriers within the waveguide. The doped regions can each include a plurality of doped areas spaced apart from each other along the length of the waveguide.

Abstract: An integrated optical device comprising at least one optical waveguide (1) formed on a substrate, the waveguide (1) being of elongate form with an optical axis extending along its length, at least one interceptor trench (3, 4, 5 or 6) being provided in the substrate adjacent at least one side of the waveguide (1), the trench (3, 4, 5,6) presenting a surface to intercept stray light travelling in the substrate in a direction substantially parallel to the optical axis of the waveguide (1), said surface being angled with respect to the direction of travel of said stray light so as to alter the direction of travel of the stray light intercepted thereby.

Abstract: An isolation device that can be used for providing optical and electrical isolation between areas of an integrated chip. The isolation device includes three doped elongate regions which form diodes which can be connected in series. The isolation device can be used in optical devices or optical attenuators.

Abstract: A doped slab region is described for use around a ridge waveguide, for controlling the refractive index of the waveguide material. Instead of simply diffusing dopant in from a surface of the slab region adjacent the waveguide, an area of the slab region is etched and dopant diffused in from a side face of the etched region. Thus, the dopant profile is established from a horizontal direction, allowing the profile to be controlled. A simple vertically uniform doping profile can thus be provided, leading to a vertically uniform current density, or an anisotropic wet etch can be applied after the initial etch to provide a profile which concentrates the current density at a selected height in the slab region.

Abstract: A thermo-optic semiconductor device has one semiconductor region providing an optical waveguide and an adjacent semiconductor region providing a resistive heater between two doped regions, current may be passed through the resistive heater within the adjacent semiconductor region to heat it and thereby vary the optical characteristics of the waveguide.

Abstract: A device 102 incorporating a sensor 106 for sensing a temperature of the device and/or a local heater 106 for the provision of heat to a minority area within the device, wherein the sensor and/or the local heater comprises at least one semiconductor element 302,804 which is fabricated as part of the device.

Abstract: An isolation device that can be used for providing optical and electrical isolation between areas of an integrated chip. The isolation device includes three doped elongate regions which form diodes which can be connected in series. The isolation device can be used in optical devices or optical attenuators.

Abstract: An electro-optic device is disclosed for altering the density of charge carriers within an integrated optical waveguide. The device includes a substrate, and an integrated optical waveguide extending across the substrate with two doped regions being provided such that an electrical signal can be applied across the doped regions to alter the density of charge carriers within the waveguide. The doped regions can each include a plurality of doped areas spaced apart from each other along the length of the waveguide.

Abstract: Apparatus connecting electrical circuit boards (1, 2, 3, . . . N) so each board can communicate with each other. Each board has an optical circuit, which in turn has a transmitter module (T) and a receiver module (R). The transmitter module (T) has electrical to optical converters (11B) for converting electrical signals into optical signals, a wavelength multiplexer (12) for multiplexing the optical signals into a single optical waveguide (12A), and an optical splitter (13) for dividing the multiplexed signal into a plurality of identical signals for transmission to each of the receiver modules (R). The receiver module (R) has an optical selector (14) for selecting signals from the transmission modules (T), a wavelength demultiplexer (21) for demultiplexing the selected signal into signals each of a different wavelength (&lgr;1 . . . &lgr;n), and optical to electrical converters (22B) for converting each of the signals of different wavelengths into an electrical signal.

Abstract: A thermo-optic semiconductor device has one semiconductor region providing an optical waveguide and an adjacent semiconductor region providing a resistive heater between two doped regions, current may be passed through the resistive heater within the adjacent semiconductor region to heat it and thereby vary the optical characteristics of the waveguide.