Ian G Daniels has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A method of producing an antifuse, comprises the steps of:
depositing a layer of undoped or lightly doped polysilicon on a layer of silicon dioxide on a semiconductor wafer;
doping one region of the polysilicon P+;
doping another region of the polysilicon N+,
leaving an undoped or lightly doped region between the P+ and N+ regions; and
forming electrical connections to the P+ and N+ regions.
Type:
Grant
Filed:
November 19, 2002
Date of Patent:
November 9, 2004
Assignee:
Zarlink Semiconductor Limited
Inventors:
Paul Ronald Stribley, John N Ellis, Ian G Daniels
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