Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

Abstract: Systems and methods for cleaning a substrate include a combined treatment of hydrogen peroxide and ultraviolet (UV) irradiation. Specific embodiments include the direct irradiation with 185/254 nm UV of a spinning substrate immersed under a liquid film of dilute hydrogen peroxide solution. Such a cleaning treatment can result in about a 100% improvement of TiN strip rate compared to processing with the same hydrogen peroxide solution without UV exposure. Such method can also be executed at room temperature and still provide improved cleaning efficiency.

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

Abstract: An apparatus and method for processing substrates. The method includes positioning a substrate within a processing chamber of a substrate processing system. The substrate includes a layer of a carbon-containing material on a working surface of the substrate. The method also includes receiving hydrogen peroxide vapor in a vapor treatment region of the substrate processing system, generating hydroxyl radical vapor by treating the hydrogen peroxide vapor in the vapor treatment region, and directing the hydroxyl radical vapor and remaining hydrogen peroxide vapor to the working surface of the substrate causing the carbon-containing material to be chemically modified.

Abstract: Methods for cleaning substrates are described including cleaning substrates having hardmask masks and polymer films, such part of semiconductor fabrication. Cleaning methods include ultraviolet (UV) light exposure of process gas mixtures and liquid cleaning chemistries. A substrate and/or process fluids are exposed to ultraviolet radiation. A process gas mixture being irradiated can include an oxidizing gas mixture (air, clean dry air, oxygen, peroxygen, etc.). Reducing gas mixtures, having hydrogen, can also be irradiated. Reactive species from irradiated gas mixtures are exposed to the substrate to chemically modify film properties, such as by facilitating a subsequent liquid cleaning step. Liquid cleaning chemistries on a substrate surface can also be irradiated. Such cleaning techniques enable shorter cleaning times, lower processing temperatures, and reduced damage to underlying or intermediate layers such as dielectric layers.

Abstract: Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system using an atomic oxygen generator. The substrate includes a layer to be cleaned and an underlying dielectric layer having a k-value. Pre-treatment gas comprising oxygen and an inert gas are delivered into an atomic oxygen generator, generating a process gas containing atomic oxygen. A portion of a surface of the substrate is exposed to the process gas while controlling two or more cleaning operating variables to ensure meeting two or more cleaning objectives and ensure completion of cleaning in the pre-treatment process time. In an embodiment, cleaning of the substrate in the pre-treatment process is set at less than 100 percent and a subsequent wet cleaning process is used to complete the substrate cleaning. In another embodiment, the pre-treatment system is configured to complete cleaning of the substrate.

Abstract: Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system and a wet clean system. One or more objectives for the pre-treatment system are selected and two or more pre-treatment operating variables including UV dose, substrate temperature, oxygen partial pressure, oxygen and ozone partial pressure, and/or total pressure, are optimized to meet the pre-treatment objectives, using metrology measurements. The substrate includes a layer to be cleaned and an underlying dielectric layer having a k-value. A pre-treatment gas comprising oxygen and/or ozone is delivered onto a surface of the substrate and irradiated with a UV device, generating oxygen radicals. Cleaning of the substrate in the pre-treatment process is set at less than 100% in order to ensure the change in k-value of the substrate is within a set range for the substrate application.

Abstract: Provided is a method and system for stripping an ion implanted resist or performing a post-ash clean using a single substrate tool. Cleaning objectives and cleaning operating variables are selected for optimization. The first step immerses the substrate in a first treatment chemical, while concurrently irradiating the substrate with UV light, the process completed in a first process time, a first flow rate, and a first rotation speed of the substrate. The second step dispenses onto the substrate a second treatment chemical at a second temperature and a second composition, the second treatment chemical dispensed at a dispense temperature, and completed in a second process time and a second rotation speed. The two or more selected cleaning operating variables comprise UV wavelength, UV power, first concentration, first rotation speed, first flow rate, second process time, second rotation speed, percentage of residue removal, and dispense temperature.

Abstract: Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

Abstract: Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid in two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal.

Abstract: A method for processing a substrate includes receiving a substrate having fluorinated polymer residue on a surface of the substrate. The fluorinated polymer residue is treated to provide a treated fluorinated polymer residue having increased sensitivity to electromagnetic (EM) radiation exposure. The treated fluorinated polymer residue is treated to EM radiation in an oxygen-containing environment to facilitate a cleaning process for removing the fluorinated polymer residue from the substrate.

Abstract: An apparatus and method for processing substrates. The method includes positioning a substrate within a processing chamber of a substrate processing system. The substrate includes a layer of a carbon-containing material on a working surface of the substrate. The method also includes receiving hydrogen peroxide vapor in a vapor treatment region of the substrate processing system, generating hydroxyl radical vapor by treating the hydrogen peroxide vapor in the vapor treatment region, and directing the hydroxyl radical vapor and remaining hydrogen peroxide vapor to the working surface of the substrate causing the carbon-containing material to be chemically modified.

Abstract: Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives.

Abstract: Method and apparatus for rinsing and drying a semiconductor substrate having a first rinse liquid such as water on the substrate in a substrate processing system. The method includes dispensing onto the substrate liquid carbon dioxide to displace any liquid present on the substrate and to dry the substrate. The apparatus includes a chamber for rinsing and drying the substrate.

Abstract: Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.

Abstract: Systems and methods for SOC planarization are described. In an embodiment, an apparatus for SOC planarization includes a substrate holder configured to support a microelectronic substrate. Additionally, the apparatus may include a light source configured to emit ultraviolet (UV) light toward a surface of the microelectronic substrate. In an embodiment, the apparatus may also include an isolation window disposed between the light source and the microelectronic substrate. Also, the apparatus may include a gas distribution unit configured to inject gas in a region between the isolation window and the microelectronic substrate. Furthermore, the apparatus may include an etchback leveling component configured to reduce non-uniformity of a UV light treatment of the microelectronic substrate.

Abstract: A method of process chemical temperature control for resist stripping of a substrate in a resist stripping system includes selecting at least two temperature control objectives and selecting at least two temperature control operating variables for optimization to achieve the at least two temperature control objectives. The method further includes injecting and mixing a first process chemical and a second process chemical into a treatment liquid delivery system of the resist stripping system, which forms a treatment liquid including an active species. The method further includes injecting vapor into the treatment liquid delivery system. The vapor is injected into the treatment liquid or the treatment liquid is injected into the vapor. Treatment liquid is dispensed from the dispensing device onto the substrate. At least two of the temperature control operating variables are adjusted in response to at least two metrology data values.

Abstract: Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.

Abstract: Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

Abstract: Provided is a method for generating active species in a treatment liquid used in a surface treatment system, the surface treatment system comprising a processing chamber and a treatment liquid delivery system, the treatment liquid delivery system having a mixing zone and an active species generation zone. A substrate and a treatment liquid comprising one or more chemical solutions and/or one or more process gases are provided. Sonic energy is applied to the treatment liquid in a mixing zone and/or an active species generation zone using one or more sonic devices. One or more selected surface treatment operating variables are controlled to optimize generation of active species in the treatment liquid. The one or more selected surface treatment operating variables are adjusted in order to meet one or more surface treatment objectives.