Patents by Inventor Ian J. Kenworthy
Ian J. Kenworthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10074521Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.Type: GrantFiled: June 4, 2015Date of Patent: September 11, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Daniel Arthur Brown, Jeffrey A. Bogart, Ian J. Kenworthy
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Patent number: 9934979Abstract: A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber.Type: GrantFiled: July 16, 2015Date of Patent: April 3, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Michael Kang, Alex Paterson, Ian J. Kenworthy
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Publication number: 20150318147Abstract: A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber.Type: ApplicationFiled: July 16, 2015Publication date: November 5, 2015Applicant: Lam Research CorporationInventors: Michael KANG, Alex PATERSON, Ian J. KENWORTHY
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Publication number: 20150279621Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.Type: ApplicationFiled: June 4, 2015Publication date: October 1, 2015Applicant: LAM RESEARCH CORPORATIONInventors: Daniel Arthur Brown, Jeff A. Bogart, Ian J. Kenworthy
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Patent number: 9099398Abstract: A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber. The gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber such that the etching gas in the plenum can be replaced with the deposition gas.Type: GrantFiled: September 19, 2013Date of Patent: August 4, 2015Assignee: LAM RESEARCH CORPORATIONInventors: Michael Kang, Alex Paterson, Ian J. Kenworthy
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Patent number: 9076634Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.Type: GrantFiled: September 10, 2010Date of Patent: July 7, 2015Assignee: Lam Research CorporationInventors: Daniel Arthur Brown, Jeff A. Bogart, Ian J. Kenworthy
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Publication number: 20140065827Abstract: A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber. The gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber such that the etching gas in the plenum can be replaced with the deposition gas.Type: ApplicationFiled: September 19, 2013Publication date: March 6, 2014Applicant: Lam Research CorporationInventors: Michael Kang, Alex Paterson, Ian J. Kenworthy
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Patent number: 8562785Abstract: A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber.Type: GrantFiled: May 31, 2011Date of Patent: October 22, 2013Assignee: Lam Research CorporationInventors: Michael Kang, Alex Paterson, Ian J. Kenworthy
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Publication number: 20130264309Abstract: Methods and apparatus for processing a substrate using plasma are disclosed. The apparatus includes a plasma processing system having a process gas supply arrangement for supplying a process gas into an interior region of said chamber and a plasma source configured for generating said plasma at least from said process gas. The apparatus also includes an acoustic energy generator arrangement configured to apply acoustic energy to at least one of a chamber component and said substrate, wherein said acoustic energy generator generates said acoustic energy in the range of 10 Hz to 1 MHz using at least one of a piezoelectric transducing, mechanical coupling vibration, wafer backside gas pulsing, pulsing of said process gas, pressure wave pulsing, and electromagnetic coupling.Type: ApplicationFiled: April 5, 2012Publication date: October 10, 2013Inventors: Ian J. Kenworthy, Daniel A. Brown, Cliff E. La Croix, Josh A. Cormier
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Publication number: 20120309204Abstract: A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber.Type: ApplicationFiled: May 31, 2011Publication date: December 6, 2012Applicant: Lam Research CorporationInventors: Michael Kang, Alex Paterson, Ian J. Kenworthy
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Patent number: 8282987Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: GrantFiled: January 31, 2012Date of Patent: October 9, 2012Assignee: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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Publication number: 20120132532Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: ApplicationFiled: January 31, 2012Publication date: May 31, 2012Applicant: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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Patent number: 8128750Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: GrantFiled: March 29, 2007Date of Patent: March 6, 2012Assignee: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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Publication number: 20110056626Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.Type: ApplicationFiled: September 10, 2010Publication date: March 10, 2011Applicant: Lam Research CorporationInventors: Daniel Arthur Brown, Jeff A. Bogart, Ian J. Kenworthy
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Publication number: 20080241517Abstract: Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.Type: ApplicationFiled: March 29, 2007Publication date: October 2, 2008Applicant: Lam Research CorporationInventors: Ian J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless