Patents by Inventor Ian J. Saunders

Ian J. Saunders has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for manufacturing optical objects
    Patent number: 7556554
    Abstract: The invention relates to an apparatus for forming or working optical elements and/or optical forming elements (1) comprising a working apparatus (18) for forming surfaces of form parts by machining or an abrasive technique, wherein at least one measuring device (17) is provided for measuring changes in form and/or surface roughness of said surface when said surface is being worked and, on the basis thereof controlling said working apparatus (18).
    Type: Grant
    Filed: December 30, 2003
    Date of Patent: July 7, 2009
    Assignee: Nederlandse Organistie voor toegepastnatuurwetenschappelijk Onderzoek TNO
    Inventors: Hedser van Brug, Hugo Anton Marie de Haan, Jacobus Johannes Korpershoek, Ian J. Saunders
  • Method of forming high resistivity regions in GaAs by deuteron implantation
    Patent number: 4394180
    Abstract: A process for producing regions of high resistivity in gallium arsenide, and other related compounds and mixed crystals which show electrical behavior which is similar to that of gallium arsenide, in which deuterons are implanted into a substrate made of the semi-conductor body with energies up to a maximum value corresponding to a desired depth of penetration into the body. Apparatus for carrying out the process also is described.
    Type: Grant
    Filed: June 12, 1980
    Date of Patent: July 19, 1983
    Assignee: United Kingdom Atomic Energy Authority
    Inventors: Geoffrey Dearnaley, Kenneth Steeples, Ian J. Saunders
  • Semiconductor devices containing protons and deuterons implanted regions
    Patent number: 4290825
    Abstract: A process for manufacturing gallium arsenide devices in which regions of high resistivity are created in the gallium arsenide by subjecting the regions to bombardment by protons and then by deuterons, and devices so made.
    Type: Grant
    Filed: February 13, 1979
    Date of Patent: September 22, 1981
    Assignee: United Kingdom Atomic Energy Authority
    Inventors: Geoffrey Dearnaley, Kenneth Steeples, Ian J. Saunders