Abstract: In some embodiments, a method can include identifying detection coverage of a set of adversarial techniques based on telemetry data and a detection instance of an environment. The method can further include determining a subset of detection coverage that has a metric value below a metric value threshold and among the detection coverage for the set of adversarial techniques. The method may further include identifying at least one detection instance associated with the subset of detection coverage. The method can further include presenting, via a graphical user interface, a representation of at least one of the subset of detection coverage or the at least one detection instance associated with the subset of detection coverage. The method can further include updating the subset of detection coverage based on the telemetry data, the detection instance, or the at least one detection instance to improve the metric value.

Abstract: A method of fabricating a semiconductor device is described. In this method, a starting substrate of sufficient thickness is selected that has the required defect density levels, which may result in an undesirable doping level. Then a semiconductor layer having a desired doping level is formed on the starting substrate. The resulting semiconductor layer has the required defect density and doping levels for the final product application. After active components, electrical conductors, and any other needed structures are formed on the semiconductor layer, the starting substrate is removed leaving a desired thickness of the semiconductor layer. In a VECSEL application, the active components can be a gain cavity, where the semiconductor layer has the necessary defect density and doping levels to maximize wall plug efficiency (WPE). In one embodiment, the doping of the semiconductor layer is not uniform. For example, a majority of the layer is doped at a low level and the remainder is doped at a much higher level.

Abstract: A method of fabricating a semiconductor device is described. In this method, a starting substrate of sufficient thickness is selected that has the required defect density levels, which may result in an undesirable doping level. Then a semiconductor layer having a desired doping level is formed on the starting substrate. The resulting semiconductor layer has the required defect density and doping levels for the final product application. After active components, electrical conductors, and any other needed structures are formed on the semiconductor layer, the starting substrate is removed leaving a desired thickness of the semiconductor layer. In a VECSEL application, the active components can be a gain cavity, where the semiconductor layer has the necessary defect density and doping levels to maximize wall plug efficiency (WPE). In one embodiment, the doping of the semiconductor layer is not uniform. For example, a majority of the layer is doped at a low level and the remainder is doped at a much higher level.