Abstract: Methods of forming air gaps in hole and trench structures using plasma enhanced atomic layer deposition (PEALD) are disclosed. The methods may be used to form buried voids, i.e., voids for which the top is below the top of the adjacent features. In some embodiments, the methods are to reduce intra-level capacitance in semiconductor devices.

Abstract: Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. The inhibition plasma selectively interacts near the top of the feature, inhibiting deposition at the top of the feature compared to the bottom of the feature, enhancing bottom-up fill. A process chamber may have multiple pressure switches to enable a process after deposition at a higher pressure than the pressure during deposition.

Abstract: Portable, low cost, high speed surface and subsurface vehicles for aquatic data collection, payload delivery, or water quality monitoring. The vehicles can be deployed in pods enable rapid large scale data collection across a wide area. The vehicles are capable of transiting the water surface at speeds of over ten knots, and can also be propelled under the water surface and dive vertically to the floor of the water body. A passive, non-powered internal weight transfer system enhances the vehicle's performance in each of its transit modes. The vehicles can have one or more of the following features: high speed stabilizing wings, a tool-less assembly system, sacrificial standoffs for vertical dives, sacrificial protectors for the control surfaces, and/or a universal mounting system for attaching payloads such as sensors.

Abstract: Methods for filling gaps with dielectric material involve deposition using an atomic layer deposition (ALD) technique to fill a gap followed by deposition of a cap layer on the filled gap by a chemical vapor deposition (CVD) technique. The ALD deposition may be a plasma-enhanced ALD (PEALD) or thermal ALD (tALD) deposition. The CVD deposition may be plasma-enhanced CVD (PECVD) or thermal CVD (tCVD) deposition. In some embodiments, the CVD deposition is performed in the same chamber as the ALD deposition without intervening process operations. This in-situ deposition of the cap layer results in a high throughput process with high uniformity. After the process, the wafer is ready for chemical-mechanical planarization (CMP) in some embodiments.

Abstract: Silicon oxide, silicon nitride, and silicon oxynitride films may be deposited by thermal atomic layer deposition (thermal ALD) in a single wafer plasma reactor. The single wafer plasma reactor can perform thermal ALD and plasma-enhanced atomic layer deposition (PEALD). Highly conformal films may be deposited at a high deposition rate without damaging or with minimal damage to the substrate using thermal ALD. The substrate may be heated at an elevated temperature during oxidation and/or nitridation. In some implementations, the elevated temperature is between about 500 C and about 750 C. In some implementations, hydrogen and oxygen may be flowed as reactant gases during oxidation, where the hydrogen and oxygen may react in an exothermic reaction to drive formation of oxide.

Abstract: Techniques for synchronized interleaved watermarking are described. In various embodiments, a headend provisions control words (CWs), generates entitlement control messages (ECMs) for producing the CWs, where each of the ECMs is associated with a watermark identifier (WMID) symbol index assigned to a watermark cryptoperiod, moves portion(s) from a video stream to auxiliary streams, generates versions of the portion(s) to embed watermark symbols within the watermark cryptoperiod, where each version represents a respective watermark symbol, and encrypts the versions using the CWs at start of the watermark cryptoperiod. On the client side, a client device storing a WMID obtains the video and encrypted auxiliary streams and the ECMs referencing the WMID symbol index and selects and decrypts an auxiliary stream using a CW during the watermark cryptoperiod based on the respective watermark symbol, the WMID symbol index, and the WMID before re-multiplexing the video and auxiliary streams for rendering.

Abstract: Various embodiments include methods to produce low dielectric-constant (low-?) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-? materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.

Abstract: Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.

Abstract: In example implementations, a method for coloring an alloy is provided. The method includes anodizing a substrate in an anodizing bath comprising phosphoric acid, at a constant temperature and a constant voltage for a first time period to develop an anodizing layer that includes a barrier layer, reducing the constant voltage applied to the anodizing bath for a second time period to change a thickness of the barrier layer and change a width of pores in the anodizing layer, plating the substrate in a plating bath at a first current that is increased over a third time period in accordance with a current profile of the plating bath, and plating the substrate in the plating bath at a second current for a fourth time period.

Abstract: Techniques for a trusted system for secure content distribution and trusted recording of content consumption are described. In some embodiments, the trusted system transcodes and transcrypts a media content item using a key obtained from a content provider and one or more keys based on an entitlement from a service provider to generate an encrypted media content item. The trusted system further receives a request to provide the media content item to a client device. The trusted system also obtains a signed audit token recording the request upon an authorization by the service provider based on the entitlement and a confirmation by the content provider, where the signed audit token is signed by the content provider and the service provider. The trusted system additionally provides the one or more keys for decrypting the encrypted media content item and reports the signed audit token.

Abstract: Techniques for packet-accurate targeted content substitution by a stitcher are described herein. In some embodiments, the stitcher at a client device receives a live transport stream (TS) and a splice message indicating a start time and an end time of a splice period. The stitcher locates in the live TS a video packet with a video packet identifier (PID) and an audio packet with an audio PID crossing the start time. The stitcher injects to the live TS targeted content TS packets within the splice period, where the injection includes re-stamping PIDs and presentation timestamps of the targeted content TS packets to match the live TS packets, and re-stamping the live TS packets with a predefined PID starting from the video packet and the audio packet, and ceasing the re-stamping when a respective audio packet in the live TS packets crossing the end time.

Abstract: This invention relates to a improvements relating to munitions, specifically to coating small arms ammunition with decoppering agents, as a replacement in lead free ammunition. There is a method of manufacturing a coated metallic projectile for a rifled barrel, comprising; providing a metallic projectile cup with a coating of a decoppering agent located thereon, to provide a coated metallic projectile cup; causing the coated metallic projectile cup to be drawn through a plurality of dies to form a drawn coated metallic projectile.

Abstract: The invention relates to a femoral component (2) of a knee prosthesis. The component comprises a curved outer surface (4) for bearing against a tibial component. Said curved outer surface includes a posterior end and an anterior end. The curved outer surface includes an area (A) which extends from a first position closer to the posterior end to a second position closer to the anterior end, wherein said area (A) includes no parting line.

Abstract: Methods of forming air gaps in hole and trench structures are disclosed. The methods may be used to form buried voids, i.e., voids for which the top is below the top of the adjacent features. The methods include inhibition of the hole or trench structures and selective deposition at the top of the structure forming an air gap within the structures. In some embodiments, the methods are to reduce intra-level capacitance in semiconductor devices.

Abstract: Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.

Abstract: Methods of filling a gap with a dielectric material including using an inhibitor plasma during deposition. The inhibitor plasma increases a nucleation barrier of the deposited film. When the inhibitor plasma interacts with material in the feature, the material at the bottom of the feature receives less plasma treatment than material located closer to a top portion of the feature or in field. Deposition at the top of the feature is then selectively inhibited and deposition in lower portions of the feature proceeds with less inhibition or without being inhibited. As a result, bottom-up fill is enhanced, which can create a sloped profile that mitigates the seam effect and prevents void formation. In some embodiments, an underlying material at the top of the feature is protected using an integrated liner. In some embodiments, a hydrogen chemistry is used during gap fill to reduce seam formation.

Abstract: Techniques for a trusted system for secure content distribution and trusted recording of content consumption are described. In some embodiments, the trusted system transcodes and transcrypts a media content item using a key obtained from a content provider and one or more keys based on an entitlement from a service provider to generate an encrypted media content item. The trusted system further receives a request to provide the media content item to a client device. The trusted system also obtains a signed audit token recording the request upon an authorization by the service provider based on the entitlement and a confirmation by the content provider, where the signed audit token is signed by the content provider and the service provider. The trusted system additionally provides the one or more keys for decrypting the encrypted media content item and reports the signed audit token.

Abstract: A NAND structure and method of fabricating the structure are described. A multi-layer ONON stack is deposited on a Si substrate and a field oxide grown thereon. A portion of the field oxide is removed, and high-aspect-ratio channels are etched in the stack. The channels are filled with a Si oxide using a thermal ALD process. The thermal ALD process includes multiple growth cycles followed by a passivation cycle. Each growth cycle includes treating the surface oxide surface using an inhibitor followed by multiple cycles to deposit the oxide on the treated surface using a precursor and source of the oxide. The passivation after the growth cycle removes the residual inhibitor. The Si oxide is recess etched using a wet chemical etch of DHF and then capped using a poly-Si cap.