Patents by Inventor Ian Laboriante

Ian Laboriante has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190206884
    Abstract: A method of forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising alternating insulative tiers and wordline tiers. A select gate tier is above an upper of the insulative tiers. Channel openings extend through the alternating tiers and the select gate tier. Charge-storage material is formed within the channel openings elevationally along the alternating tiers and the select gate tier. Sacrificial material is formed within the channel openings laterally over the charge-storage material that is laterally over the select gate tier and that is laterally over the alternating tiers. Elevationally-outer portions of each of the charge-storage material and the sacrificial material that are within the channel openings are etched. After such etching, the sacrificial material is removed from the channel openings.
    Type: Application
    Filed: February 23, 2018
    Publication date: July 4, 2019
    Applicant: Micron Technology, Inc
    Inventors: Wei Yeeng Ng, Ian Laboriante, Joseph Neil Greeley, Tom J. John, Ho Yee Hui
  • Publication number: 20190043890
    Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.
    Type: Application
    Filed: October 11, 2018
    Publication date: February 7, 2019
    Applicant: Micron Technology, Inc.
    Inventors: Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian Laboriante, John D. Hopkins, Kunal Shrotri, Ryan Meyer, Vinayak Shamanna, Kunal R. Parekh, Martin C. Roberts, Matthew Park
  • Patent number: 10157933
    Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.
    Type: Grant
    Filed: April 19, 2016
    Date of Patent: December 18, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian Laboriante, John D. Hopkins, Kunal Shrotri, Ryan Meyer, Vinayak Shamanna, Kunal R. Parekh, Martin C. Roberts, Matthew Park
  • Publication number: 20170301685
    Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.
    Type: Application
    Filed: April 19, 2016
    Publication date: October 19, 2017
    Inventors: Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian Laboriante, John D. Hopkins, Kunal Shrotri, Ryan Meyer, Vinayak Shamanna, Kunal R. Parekh, Martin C. Roberts, Matthew Park