Abstract: A laser comprising a gain section and a plurality of gratings are provided. Each grating is coupled to the gain section to form a respective optical cavity that is capable of generating light of a particular wavelength. The laser also comprises a switch that is configured to select one of the plurality of gratings, such that the optical cavity formed by the gain section and the selected grating generates the light output of the laser. This provides a laser that is tunable between different wavelengths and offers a simple level of tuning control.

Abstract: A semiconductor optical apparatus is disclosed, wherein the semiconductor optical apparatus comprises a first waveguide region defining a first mode size and a second active waveguide region defining a second mode size being smaller than the first mode size. The second active waveguide region is optically coupled to the first waveguide region and the second active waveguide region comprises a lower multiple quantum well layer and an upper multiple quantum well layer located above the lower multiple quantum well layer. The lower multiple quantum well layer is physically separated from the upper multiple quantum well layer by a spacer layer. The upper multiple quantum well layer comprises a mode transformation region configured to reduce the size of an optical mode from the first mode size to the second mode size.

Abstract: A multi-channel tunable laser includes: a frequency selective optical multiplexer comprising: a plurality of channel terminals for receiving/transmitting light; a plurality of channel waveguide blocks, each channel waveguide block comprising at least one reflectively terminated channel waveguide; and an optical coupling element optically coupling the plurality of channel terminals with the plurality of channel waveguide blocks, each of the channel waveguides of the plurality of channel waveguide blocks having a different length; a plurality of channel paths, each channel path coupled to a respective channel terminal of the plurality of channel terminals and comprising a gain element, a phase element and a reflective element; and a plurality of optical tuners, each one configured to tune the channel waveguides of a respective channel waveguide block of the plurality of channel waveguide blocks.

Abstract: A semiconductor optical apparatus is disclosed, wherein the semiconductor optical apparatus comprises a first waveguide region defining a first mode size and a second active waveguide region defining a second mode size being smaller than the first mode size. The second active waveguide region is optically coupled to the first waveguide region and the second active waveguide region comprises a lower multiple quantum well layer and an upper multiple quantum well layer located above the lower multiple quantum well layer. The lower multiple quantum well layer is physically separated from the upper multiple quantum well layer by a spacer layer. The upper multiple quantum well layer comprises a mode transformation region configured to reduce the size of an optical mode from the first mode size to the second mode size.

Abstract: A tunable laser for tuning a lasing mode based on light beams travelling through at least one block of channel waveguides with at least two tunable combs, includes: a frequency selective optical multiplexer comprising a first terminal for receiving/transmitting light, at least one block of channel waveguides, each channel waveguide having a reflectively coated first tail and a second tail, and an optical coupling element optically coupling the first terminal with the second tails of the channel waveguides of the at least one block of channel waveguides, each of the channel waveguides having a different length; a gain element generating a broad spectrum of light, the gain element coupling the first terminal of the frequency selective optical multiplexer with a reflective element.

Abstract: A tunable laser for tuning a lasing mode based on light beams travelling through at least one block of channel waveguides with at least two tunable combs, includes: a frequency selective optical multiplexer comprising a first terminal for receiving/transmitting light, at least one block of channel waveguides, each channel waveguide having a reflectively coated first tail and a second tail, and an optical coupling element optically coupling the first terminal with the second tails of the channel waveguides of the at least one block of channel waveguides, each of the channel waveguides having a different length; a gain element generating a broad spectrum of light, the gain element coupling the first terminal of the frequency selective optical multiplexer with a reflective element.

Abstract: The invention relates to a tunable laser, the tunable laser comprising a first waveguide, a second waveguide and a semiconductor layer being arranged to separate the first waveguide from the second waveguide. The first waveguide comprises a first coupling portion and an active portion for generating a laser signal. The second waveguide comprises a second coupling portion and a tuning portion for tuning the wavelength of the laser signal. The first coupling portion and the second coupling portion are configured to couple the laser signal between the first waveguide and the second waveguide through the semiconductor layer.

Abstract: Planar waveguide apparatus provides a waveguide at least partially overlying a passive buried rib waveguide for coupling optical radiation there between. The overlying waveguide has at least one tapered section, the width of the taper determining the degree of coupling between the waveguides at points along the tapered section. The overlying waveguide may have an active core region. The passive buried rib may have one or more unguided sections below electrically driven regions of the active waveguide to avoid parasitic modes and/or may provide a grating for use as a filter or feedback. Variations include a branched passive waveguide for coupling to two or more overlying waveguides and two or more aligned and active overlying waveguides coupling to one passive waveguide, there being a break in a shared core region of the active waveguides to provide electrical isolation between them.

Abstract: The invention relates to a tunable laser, the tunable laser comprising a first waveguide, a second waveguide and a semiconductor layer being arranged to separate the first waveguide from the second waveguide. The first waveguide comprises a first coupling portion and an active portion for generating a laser signal. The second waveguide comprises a second coupling portion and a tuning portion for tuning the wavelength of the laser signal. The first coupling portion and the second coupling portion are configured to couple the laser signal between the first waveguide and the second waveguide through the semiconductor layer.

Abstract: A multi-channel tunable laser includes: a frequency selective optical multiplexer comprising: a plurality of channel terminals for receiving/transmitting light; a plurality of channel waveguide blocks, each channel waveguide block comprising at least one reflectively terminated channel waveguide; and an optical coupling element optically coupling the plurality of channel terminals with the plurality of channel waveguide blocks, each of the channel waveguides of the plurality of channel waveguide blocks having a different length; a plurality of channel paths, each channel path coupled to a respective channel terminal of the plurality of channel terminals and comprising a gain element, a phase element and a reflective element; and a plurality of optical tuners, each one configured to tune the channel waveguides of a respective channel waveguide block of the plurality of channel waveguide blocks.

Abstract: The present invention provides a current blocking structure for electronic devices, preferably optoelectronic devices. The current blocking structure comprises a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer and a first p-type semiconductor material layer wherein the n-type Ru—InP layer is less than 0.6 ?m thick. The semiconductor material arrangement and p-type semiconductor material layer form a current blocking p-n junction. The current blocking structure may further comprise other n-type layers and/or multiple n-type Ru—InP layers and/or intrinsic/undoped layers wherein the n-type Ru—InP layers may be thicker than 0.6 ?m.

Abstract: The present invention provides a current blocking structure for electronic devices, preferably optoelectronic devices. The current blocking structure comprises a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer and a first p-type semiconductor material layer wherein the n-type Ru—InP layer is less than 0.6 ?m thick. The semiconductor material arrangement and p-type semiconductor material layer form a current blocking p-n junction. The current blocking structure may further comprise other n-type layers and/or multiple n-type Ru—InP layers and/or intrinsic/undoped layers wherein the n-type Ru—InP layers may be thicker than 0.6 ?m.

Abstract: An optical device for generating a beat frequency between two optical wavelengths includes two waveguides (2a, 2b) of different width and a grating layer (4) that is common to both wave guides.

Abstract: An optical device for generating a beat frequency between two optical wavelengths includes two waveguides (2a, 2b) of different width and a grating layer (4) that is common to both wave guides.