Abstract: Embodiments in accordance with the present disclosure are directed to methods and apparatuses used for slow wave activity (SWA) optimization. An example method includes receiving one or more bio-signals from a user and classifying sleep stages by processing the bio-signals. The method further include determining dominant peripheral nervous system (PNS) oscillations based on the bio-signals and as a function of time and stage of sleep, and characterizing at least one property of the dominant PNS oscillations, including a phase, a phase shift, an amplitude, and/or frequency. The method further include providing an indication of an optimal window for maximizing SWA generation based on the phase, the phase shift, the amplitude, or the frequency. The indication is provided to stimulation circuitry that delivers stimulation to the user within the optimal window. Feedback is provided responsive to the stimulation based on an EEG signal of the user.

Abstract: A large format array is described having a series of smaller arrays daisy chained together to form the larger array. The smaller arrays are mounted on a base plate that may be of a non planar configuration. The daisy chaining together of the smaller arrays enables a smaller number of connections to be made to the external interface via connections.

Abstract: A large format array is described having a series of smaller arrays daisy chained together to form the larger array. The smaller arrays are mounted on a base plate that may be of a non planar configuration. The daisy chaining together of the smaller arrays enables a smaller number of connections to be made to the external interface via connections.

Abstract: A 3 dimensional (3D) imaging device is described. The device emits a laser pulse towards a scene. Radiation reflected by the scene includes information relating to the range between objects in the scene. A detector, detects the reflected radiation pulses and outputs signals characteristic of the scene to an imaging device or camera. Two image frames will be produced per radiation pulse, one frame being representative of the ‘close’ object and the second frame being representative of the ‘far’ object. The ratio of these frames may be processed by suitable means to produce a 3D image of the scene.

Abstract: An imaging system is described which includes a radiation source outputting radiation incident on a scene. The radiation is pulsed and the reflected radiation is detected by a detector array and a resulting signal output by a read out circuit. The signal output is characteristic of the scene on which the radiation is incident. The output signal is combined over a number of pulses, the averaging being carried out on-chip and within the detector circuitry. The radiation source may be a semiconductor diode source amplified with a doped fibre amplifier.

Abstract: In an infrared detector device for viewing an object or scene at more than one wavelength, the detector elements (10 and 20) are optimized to have appropriately different infrared responses by being formed in accordance with the invention in different levels (1 and 2) of different material on a substrate (3). Infrared concentrators (55) such as immersion lenses, light-pipes and/or reflectors collect incident radiation (50) over an area larger than the active portion of the associated detector element (10 and/or 20) and concentrate the radiation (50) onto the active portions. The arrangement adopted in accordance with the invention provides adequate space for at least one connection (15) of each upper-level detector element (10) to extend to the substrate (3) through an area of the lower level (2) which is located between the lower-level active portions on which the radiation (50) is concentrated by the associated concentrators (55).

Abstract: An infrared detector device for at least two wavelengths, i.e. 3 to 5 microns and 8 to 14 microns, comprises detector elements (10 and 20) formed in two or more infrared-sensitive materials with different badgaps, e.g. in cadmium mercury telluride. These materials may be provided side-by-side in a single level on a substrate (3) or preferably as different levels (1 and 2) on the substrate (3). Each detector element (10 and 20) comprises a p-n junction (11 and 21) between opposite conductivity type regions (12,13 and 22,23). Electrical connections (15,25,24) extend from these regions to the substrate (3). Freedom in design and fabrication is obtained by a connection structure in which one connection (25) of the longer-wavelength response element (20) contacts both the semiconductor material (2) of that element (20) and the larger-bandgap material (1) of the shorter-wavelength response element (10), at a side-wall (42) of both materials.

Abstract: An imaging device arrangement comprises infra-red radiation detector elements (10) and signal-processing circuitry including at least one charge-transfer line (30). The detector elements (10) are preferably cadmium mercury telluride photodiodes formed in a common body or body portion which is secured to a substrate (e.g. of silicon) comprising the charge-transfer line (30). Each detector element (10) is connected between an input connection (2,3) of the charge-transfer line (30) and a common electrical connection (4). At least one storage electrode (62) and at least one subtraction gate (63) are present at each input connection (2,3) for subtracting at least one portion (77) of the charge-signal so that only a portion (78) of the charge-signal from each detector element (10) is transferred along the charge-transfer line (30).

Abstract: In an imaging device, photocurrent generated by detector elements (1), e.g. cadmium mercury telluride photodiodes, may be integrated in resettable capacitors (2), and an output signal (S) may be derived by reading the potential of the capacitor (2) at the end of its integration period, e.g. using a source-follower MOST (3). In accordance with the invention first and second capacitors (2a and 2b) are switchably coupled in alternate parallel arms between each detector element (1) and the voltage-reading means (3), by means of an arrangement of input gates (8a and 8b) and output gates (9a and 9b). Since one of the first and second capacitors (2a or 2b) can be coupled to the detector element (1) while the other (2b or 2a) is coupled to the voltage-reading means (3), each detector element (1) can be switched from one to the other so as to be operated the whole time for photodetection without its signal being lost (i.e. not integrated) when reading the previous output signal from that detector element (1).

Abstract: In an imaging device, photocurrent generated by photovoltaic detector elements (1), e.g. cadmium mercury telluride photodiodes, is integrated in resettable capacitors (2), and an output signal (S) is derived by reading the potential of the capacitor (2) at the end of its integration period, e.g. using a source-follower MOST (3). In accordance with the invention, blooming-protection means (11,48,12) is coupled to each capacitor (2) to inhibit forward-biasing of the detector elements (1) and inversion of the capacitor potential when the capacitor (2) becomes fully discharged by excessive photocurrent. The blooming-protection means comprises a further gate (11) which has substantially the same threshold voltage as the injection gate (10) via which the photocurrent is injected into the capacitor (2).

Abstract: An array of photovoltaic infrared radiation detector elements are formed in a body of infrared sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate, which may comprise a silicon CCD for processing signals from the detector elements. An array of regions of a first conductivity type which form the p-n junctions of each detector element with an adjacent body part of opposite conductivity type, extend through the thickness of the body at side-walls of an array of apertures. Each aperture is associated with a detector element and is preferably formed by ion etching. These regions of the first conductivity type are electrically connected to substrate conductors in a simple and reliable manner by a metallization layer in the apertures, without rendering a significant area of the detector insensitive to radiation imaged onto the upper surface of the body.

Abstract: An array of photovoltaic infrared radiation detector elements are formed in a body of infrared-sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate, which may comprise a silicon CCD for processing signals from the detector elements. An array of regions of a first conductivity type, which form the p-n junctions of each detector element with an adjacent body part of opposite conductivity type, extend through the thickness of the body at side walls of an array of apertures. Each aperture is associated with a detector element and is preferably formed by ion etching. These regions of the first conductivity type are electrically connected to substrate conductors in a simple and reliable manner by a metallization layer in the apertures, without rendering a significant area of the detector insensitive to radiation imaged onto the upper surface of the body.

Abstract: A group of infra-red radiation detector elements are manufactured from a body (21) of infra-red sensitive materials on an insulating substrate (22) using two masking steps which do not require critical alignment even with close spacing between the elements. A first masking layer (24; see FIG. 10) e.g. of photoresist is formed on the upper surface of at least the body (21) to determine by a lift-off technique a metallization pattern (35, 36; see FIG. 13) on the body (21) and the substrate (22). A second masking layer (44) e.g. of photoresist is then provided to determine by ion-bombardment through windows (45) of this layer (44) the desired pattern of elements and their electrodes. The ion-bombardment permits removal of exposed areas of not just the body (21) and metallization pattern (35, 36) but also of a passivating layer on the body surfaces; a closely spaced group of elements and their electrodes can be obtained because the ion-bombardment results in steep sides without significant undercutting.