Abstract: An apparatus and method for improving the accuracy of Electrochemical Capacitance Voltage (ECV) profiling measurements by alerting the operator to the presence of surface films or gas bubbles during the etching process and by using this in-situ monitoring apparatus to determine the true measurement area at the end of the measurement cycle and using the new value to recalculate the data. By making the area measurement integral to the ECV tool, every sample measurement can be corrected for the true measurement area, leading to improved accuracy and eliminating a large source of error.

Abstract: The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm 0.5 microns and a peak or average power density of 104-109 w/cm2 with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.

Abstract: An apparatus and method for improving the accuracy of Electrochemical Capacitance Voltage (ECV) profiling measurements by alerting the operator to the presence of surface films or gas bubbles during the etching process and by using this in-situ monitoring apparatus to determine the true measurement area at the end of the measurement cycle and using the new value to recalculate the data. By making the area measurement integral to the ECV tool, every sample measurement can be corrected for the true measurement area, leading to improved accuracy and eliminating a large source of error.

Abstract: A sealing ring assembly and an improved method for mounting a sealing ring into an electrochemical cell used for Electrochemical Capacitance Voltage (ECV) profiling measurements. The ring is located in a holder having at least one secondary bore providing fluid communication between a forward face of the holder and the central bore of the ring, directed parallel to but tangentially offset relative to the inner wall of the central bore so as to impart a degree of rotational flow to electrolyte entering the sealing ring through the or each secondary bore which effectively removes gas bubbles and refreshes the electrolyte. The holder facilitates ring removal with a much reduced risk of damage to the delicate sealing surface.