Patents by Inventor Ian Moncrieff
Ian Moncrieff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961722Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.Type: GrantFiled: December 4, 2022Date of Patent: April 16, 2024Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Anthony Wilby, Steve Burgess, Ian Moncrieff, Clive Widdicks, Scott Haymore, Rhonda Hyndman
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Patent number: 11913109Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.Type: GrantFiled: August 15, 2019Date of Patent: February 27, 2024Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Tony Wilby, Steve Burgess, Adrian Thomas, Rhonda Hyndman, Scott Haymore, Clive Widdicks, Ian Moncrieff
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Publication number: 20240014018Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.Type: ApplicationFiled: September 24, 2023Publication date: January 11, 2024Inventors: Tony WILBY, Steve BURGESS, Adrian THOMAS, Rhonda HYNDMAN, Scott HAYMORE, Clive WIDDICKS, Ian MONCRIEFF
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Patent number: 11718908Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.Type: GrantFiled: April 27, 2021Date of Patent: August 8, 2023Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Scott Haymore, Amit Rastogi, Rhonda Hyndman, Steve Burgess, Ian Moncrieff
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Publication number: 20230094699Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.Type: ApplicationFiled: December 4, 2022Publication date: March 30, 2023Inventors: Anthony WILBY, Steve Burgess, Ian Moncrieff, Clive Widdicks, Scott Haymore, Rhonda Hyndman
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Patent number: 11521840Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.Type: GrantFiled: February 20, 2018Date of Patent: December 6, 2022Assignee: SPTS Technologies LimitedInventors: Anthony Wilby, Steve Burgess, Ian Moncrieff, Clive Widdicks, Scott Haymore, Rhonda Hyndman
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Publication number: 20210246545Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.Type: ApplicationFiled: April 27, 2021Publication date: August 12, 2021Inventors: SCOTT HAYMORE, AMIT RASTOGI, RHONDA HYNDMAN, STEVE BURGESS, IAN MONCRIEFF
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Patent number: 11008651Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.Type: GrantFiled: April 4, 2017Date of Patent: May 18, 2021Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Scott Haymore, Amit Rastogi, Rhonda Hyndman, Steve Burgess, Ian Moncrieff, Chris Kendal
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Publication number: 20200090913Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.Type: ApplicationFiled: August 15, 2019Publication date: March 19, 2020Inventors: TONY WILBY, STEVE BURGESS, ADRIAN THOMAS, RHONDA HYNDMAN, SCOTT HAYMORE, VLIVE WIDDICKS, IAN MONCRIEFF
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Patent number: 10153135Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.Type: GrantFiled: June 23, 2016Date of Patent: December 11, 2018Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Anthony Paul Wilby, Stephen R Burgess, Ian Moncrieff, Paul Densley, Clive L Widdicks, Paul Rich, Adrian Thomas
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Publication number: 20180308670Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.Type: ApplicationFiled: February 20, 2018Publication date: October 25, 2018Inventors: ANTHONY WILBY, STEVE BURGESS, IAN MONCRIEFF, CLIVE WIDDICKS, SCOTT HAYMORE, RHONDA HYNDMAN
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Patent number: 10029933Abstract: An integrated utility system (10) comprising; i) a power supply (12); and ii) a wastewater treatment system (20), wherein waste energy from the power supply (12) is utilized in the wastewater treatment system (20).Type: GrantFiled: October 8, 2007Date of Patent: July 24, 2018Inventors: Trevor Redvers Bridle, Ian Moncrieff
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Patent number: 9957608Abstract: A composite shield assembly is for use in deposition apparatus defining a work piece location. The assembly includes a first shield element for position circumjacent the work piece location and a second shield element for extending around and carrying the first element. The thermal conductivity of the first element is greater than that of the second element, and the elements are arranged for intimate thermal contact.Type: GrantFiled: February 13, 2012Date of Patent: May 1, 2018Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Clive Luca Widdicks, Ian Moncrieff
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Publication number: 20170294294Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.Type: ApplicationFiled: April 4, 2017Publication date: October 12, 2017Inventors: SCOTT HAYMORE, AMIT RASTOGI, RHONDA HYNDMAN, STEVE BURGESS, IAN MONCRIEFF, CHRIS KENDAL
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Publication number: 20160379807Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.Type: ApplicationFiled: June 23, 2016Publication date: December 29, 2016Inventors: ANTHONY PAUL WILBY, STEPHEN R. BURGESS, IAN MONCRIEFF, PAUL DENSLEY, CLIVE L. WIDDICKS, PAUL RICH, ADRIAN THOMAS
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Publication number: 20160240351Abstract: A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.Type: ApplicationFiled: February 5, 2016Publication date: August 18, 2016Inventors: STEPHEN R. BURGESS, ANTHONY PAUL WILBY, CLIVE L. WIDDICKS, IAN MONCRIEFF, P. DENSLEY
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Publication number: 20130042812Abstract: A composite shield assembly is for use in deposition apparatus defining a work piece location. The assembly includes a first shield element for position circumjacent the work piece location and a second shield element for extending around and carrying the first element. The thermal conductivity of the first element is greater than that of the second element, and the elements are arranged for intimate thermal contact.Type: ApplicationFiled: February 13, 2012Publication date: February 21, 2013Applicant: SPTS TECHNOLOGIES LIMITEDInventors: CLIVE Luca WIDDICKS, IAN MONCRIEFF
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Publication number: 20100089809Abstract: An integrated utility system (10) comprising; i) a power supply (12); and ii) a wastewater treatment system (20), wherein waste energy from the power supply (12) is utilised in the wastewater treatment system (20).Type: ApplicationFiled: October 8, 2007Publication date: April 15, 2010Inventors: Trevor Redvers Bridle, Ian Moncrieff
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Publication number: 20040050690Abstract: A magnetic assembly (15) is mounted on a lead screw (12) on one side of a spunter target (14). A further lead screw (11) carries a counter weight (16). The lead screws can be rotated by a stepper motor (13) to adjust the lateral positions of assembly (15) and weight (16). The stepper motor and hence the assembly (15), can be rotated about a vertical axis by shaft (17) and motor (18) so that a magnetic field can be swept around the target (14). The position of the assembly (15) is varied in accordance with a process characteristic.Type: ApplicationFiled: September 16, 2003Publication date: March 18, 2004Inventors: Gordon Robert Green, Robert Kenneth Trowell, Anthony William Barrass, Robert William Teagle, Ian Moncrieff, Stephen Robert Burgess
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Patent number: 6531942Abstract: This invention relates to a method of cooling an immersed induction coil, such as an ionizing coil used in a vacuum processing chamber. The coil 10 may comprise a coiled hollow tube 11 through which coolant can flow when pumped by a pump 13. A valve 16 is provided so that air can be passed through the tube in either direction and the direction of flow is controlled by a controller 19, which acts on the valve 16. The rate of switching of the valve 16 can be determined by a process condition or by monitoring the temperature of the downstream coolant and/or the coil.Type: GrantFiled: April 16, 2001Date of Patent: March 11, 2003Assignee: Trikon Holdings LimitedInventors: Ian Moncrieff, Clive Luca Widdicks