Abstract: An electrical device for electrically measuring a sample during electron microscope imaging includes: a chip through which a slit is defined, the chip having at least one peripheral edge, the slit having an open end at the at least one peripheral edge; an electrically conductive first contact on the chip; and an electrically conductive second contact on the chip; wherein the slit is at least partially positioned between the first contacts and second contact. An electrically conductive first wire may extend along the chip electrically connected to the first contact; and an electrically conductive second wire may extend along the chip electrically connected to the second contact. The first wire and second wire may diverge from each other in extending along the chip away from the slit.

Abstract: An electrochemistry device for electrically measuring a sample during electron microscope imaging includes: a planar chip having a first longitudinal end along which at least three laterally spaced contact electrodes are positioned; a laterally extending working electrode in electrical communication with a first of the three contact electrodes; a counter electrode spaced from and at least partially encircling the working electrode, the counter electrode in electrical communication with a second of the three contact electrodes; and a reference electrode in electrical communication with a third of the three contact electrodes, the reference electrode positioned outside of an area defined between the working electrode and counter electrode.

Abstract: Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

Abstract: Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

Abstract: Systems and methods for characterizing one or more properties of a material are disclosed. In some embodiments, the one or more properties include one or more thermal properties of the material, one or more thermoelectric properties of the material, and/or one or more thermomagnetic properties of the material. In some embodiments, a method of characterizing one or more properties of a sample material comprises heating the sample material and, while heating the sample material, obtaining one or more temperature measurements for at least one surface of the sample material via one or more thermoreflectance probes and obtaining one or more electric measurements for the sample material that correspond in time to the one or more temperature measurements. The method further comprises computing one or more parameters that characterize one or more properties of the sample material based on the measurements.

Abstract: A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.

Abstract: As typically embodied, the inventive method features bombardment of atomic nuclei with 3He ions in order to effect transmutation of atoms from a first atomic element to a second atomic element. Two notable inventive genres describe transmutation of: oxygen to nitrogen in an oxygen-containing target (e.g., including ZnO film); and, carbon to boron in a carbon-containing target (e.g., including SiC film). According to the former, transmutation of 16O to 15N occurs; more specifically, transmutation of 16O to 15O occurs via nuclear bombardment, and then transmutation of 15O to 15N occurs via decay by positron emission. According to the latter, transmutation of 12C to 11B occurs; more specifically, transmutation of 12C to 11C occurs via nuclear bombardment, and then transmutation of 11C to 11B occurs via decay by positron emission.