Patents by Inventor Ian Robson McFadyen

Ian Robson McFadyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7271982
    Abstract: A method for forming a perpendicular magnetic recording head using an air-bearing surface damascene process and perpendicular magnetic recording head formed thereby is disclosed. The perpendicular head is formed by depositing a pseudo trailing shield layer over a pole layer and selectively etching the pseudo trailing shield layer to a depth equal to a desired trailing shield throat height. Then, a magnetic material is deposited in the resulting void.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: September 18, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Scott Arthur MacDonald, Ian Robson McFadyen, Neil Leslie Robertson
  • Patent number: 7212379
    Abstract: A magnetic write head for use in perpendicular magnetic data recording. The write head includes a write pole and a trailing shield having a tapered surface. A return pole stitched to the trailing shield is magnetically connected with the write pole at a location away from the air bearing surface (ABS).
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: May 1, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Yimin Hsu, Quang Le, Jui-Lung Li, Ian Robson McFadyen, James Lamar Nix, Neil Leslie Robertson, Mason Lamar Williams, III
  • Patent number: 7168939
    Abstract: UV molding from elastomeric masters on thin bendable backplanes that allow replication of UV-cured resist patterns with high accuracy is disclosed. This design accommodates large substrate topographies, has improved de-molding properties, and facilitates two-in-one lithography and assembly of the sliders on topographically structured elastomeric sticky pads. The combination of sticky pad assembly and two-in-one lithography allows an all-in-one harmony process based on UV-molding. These features cure prior art technical problems of the harmony process while significantly reducing cost.
    Type: Grant
    Filed: February 26, 2004
    Date of Patent: January 30, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands BV
    Inventors: Alexander Bietsch, Michael W. Chaw, Ashok Lahiri, Ian Robson McFadyen, Bruno Michel, Mark C. Thurber
  • Patent number: 6944937
    Abstract: The present invention provides a method of manufacturing a magnetoresistive read head which reduces electrostatic discharge and allows measurement of gap resistances in the head.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: September 20, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, James D. Jarratt, Emo Hilbrand Klaassen, Ian Robson McFadyen, Timothy J. Moran
  • Patent number: 6861177
    Abstract: A method of forming a read sensor that has a very narrow track width is disclosed. The method involves forming a thin lift-off mask over a central region of a sensor layer, which is subsequently ion-milled and deposited with hard bias and lead layers. The thin lift-off mask is made by forming a release layer over the sensor layer; forming a hardmask layer over the release layer; forming a photoresist layer over the hardmask layer; imaging and developing the photoresist layer such that end portions of the photoresist layer are removed and a central portion of the photoresist layer remains; reactive ion etching (RIE) the hardmask layer such that end portions of the hardmask layer are removed and a central portion of the hardmask layer remains; stripping the central portion of the photoresist layer; and etching the release layer such that end portions of the release layer are removed and a central portion of the release layer remains.
    Type: Grant
    Filed: February 21, 2002
    Date of Patent: March 1, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Mustafa Pinarbasi, Ian Robson McFadyen, Alfred Floyd Renaldo, Randall George Simmons, Douglas Johnson Werner
  • Publication number: 20040090715
    Abstract: A first read gap layer has a resistance RG1 between a first shield layer and one of the first and second lead layers of a read head and the second read gap layer has a resistance RG2 between a second shield layer and said one of the first and second lead layers of the read head. A connection is provided via a plurality of resistors between a first node and each of the first and second shield layers wherein the plurality of resistors includes at least first and second resistors RS1 and RS2 and the first node is connected to said one of the first and second lead layers. A second node is located between the first and second resistors RS1 and RS2. An operational amplifier has first and second inputs connected to the first and second nodes respectively so as to be across the first resistor RS1 and has an output connected to the first node for maintaining the first and second nodes at a common voltage potential. In a first embodiment the first and second shield layers are shorted together.
    Type: Application
    Filed: June 30, 2003
    Publication date: May 13, 2004
    Applicant: Hitachi Global Storage Technologies
    Inventors: Richard Hsiao, James D. Jarratt, Emo Hilbrand Klaassen, Ian Robson McFadyen, Timothy J. Moran
  • Patent number: 6678127
    Abstract: A first read gap layer has a resistance RG1 between a first shield layer and one of the first and second lead layers of a read head and the second read gap layer has a resistance RG2 between a second shield layer and said one of the first and second lead layers of the read head. A connection is provided via a plurality of resistors between a first node and each of the first and second shield layers wherein the plurality of resistors includes at least first and second resistors RS1 and RS2 and the first node is connected to said one of the first and second lead layers. A second node is located between the first and second resistors RS1 and RS2. An operational amplifier has first and second inputs connected to the first and second nodes respectively so as to be across the first resistor RS1 and has an output connected to the first node for maintaining the first and second nodes at a common voltage potential. In a first embodiment the first and second shield layers are shorted together.
    Type: Grant
    Filed: January 2, 2001
    Date of Patent: January 13, 2004
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, James D. Jarratt, Emo Hilbrand Klaassen, Ian Robson McFadyen, Timothy J. Moran
  • Publication number: 20030157803
    Abstract: A method of forming a read sensor that has a very narrow track width is disclosed. The method involves forming a thin lift-off mask over a central region of a sensor layer, which is subsequently ion-milled and deposited with hard bias and lead layers. The thin lift-off mask is made by forming a release layer over the sensor layer; forming a hardmask layer over the release layer; forming a photoresist layer over the hardmask layer; imaging and developing the photoresist layer such that end portions of the photoresist layer are removed and a central portion of the photoresist layer remains; reactive ion etching (RIE) the hardmask layer such that end portions of the hardmask layer are removed and a central portion of the hardmask layer remains; stripping the central portion of the photoresist layer; and etching the release layer such that end portions of the release layer are removed and a central portion of the release layer remains.
    Type: Application
    Filed: February 21, 2002
    Publication date: August 21, 2003
    Inventors: Mustafa Pinarbasi, Ian Robson McFadyen, Alfred Floyd Renaldo, Randall George Simmons, Douglas Johnson Werner
  • Publication number: 20020085318
    Abstract: A first read gap layer has a resistance RG1 between a first shield layer and one of the first and second lead layers of a read head and the second read gap layer has a resistance RG2 between a second shield layer and said one of the first and second lead layers of the read head. A connection is provided via a plurality of resistors between a first node and each of the first and second shield layers wherein the plurality of resistors includes at least first and second resistors RS1 and RS2 and the first node is connected to said one of the first and second lead layers. A second node is located between the first and second resistors RS1 and RS2. An operational amplifier has first and second inputs connected to the first and second nodes respectively so as to be across the first resistor RS1 and has an output connected to the first node for maintaining the first and second nodes at a common voltage potential. In a first embodiment the first and second shield layers are shorted together.
    Type: Application
    Filed: January 2, 2001
    Publication date: July 4, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Richard Hsiao, James D. Jarratt, Emo Hilbrand Klaassen, Ian Robson McFadyen, Timothy J. Moran
  • Patent number: 6195227
    Abstract: A rotary microactuator includes a stationary electrode formed on a substrate, a movable electrode in proximity to the stationary electrode, a flexure mechanically connecting the stationary electrode to the movable electrode, and a plurality of limiters anchored to the substrate. Each limiter has an in-plane limiter portion and an out-of-plane limiter portion. The in-plane limiter portion limits movement of the movable electrode to a predetermined in-plane distance in a direction parallel to a surface of the substrate. The out-of-plane limiter portion limits movement of the movement of the movable electrode to a predetermined out-of-plane distance.
    Type: Grant
    Filed: December 30, 1997
    Date of Patent: February 27, 2001
    Assignee: International Business Machines, Inc.
    Inventors: Long-Sheng Fan, Toshiki Hirano, Francis Chee-Shuen Lee, Ian Robson McFadyen