Patents by Inventor Ian S. Roth

Ian S. Roth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6686823
    Abstract: A coaxial inductive power transfer and distribution apparatus includes a stationary primary conductor and a mobile secondary coil magnetically coupled together to provide for inductive power transfer therebetween. A return conductor that is stationary is mechanically coupled to the primary conductor and ensures the position stability of the primary conductor with respect to the moveable secondary coil. The return conductor also includes an air gap in which a support member for the mobile secondary coil is disposed within. The mobile secondary winding includes a high permeability toroidal core that is coaxially disposed about, and spaced apart from, the primary conductor. A multi-turn coil is radially disposed about the high permeability toroidal core. The support member for the mobile secondary winding extends through the air gap in the return conductor to the exterior of the return conductor, where it may be coupled to an electric vehicle.
    Type: Grant
    Filed: April 29, 2002
    Date of Patent: February 3, 2004
    Assignee: PRI Automation, Inc.
    Inventors: Floyd D. Arntz, Ian S. Roth, Marcel P. J. Gaudreau, Brian J. Doherty
  • Publication number: 20030201862
    Abstract: A coaxial inductive power transfer and distribution apparatus is disclosed that includes a primary conductor that is stationary and a mobile secondary coil magnetically coupled to the stationary primary conductor to provide an inductive power transfer therebetween. The primary and secondary coils are disposed within a return conductor that is stationary and acts as a return path for current flowing in the primary center conductor. The primary conductor is mechanically connected to the interior surface of the return conductor to ensure the position stability of the primary conductor with respect to the secondary coil. The return conductor also includes an air gap in which a support member for the mobile secondary coil and structure is disposed within. The mobile secondary coil and structure includes a toroidal core composed of a high permeability material that is coaxially disposed about, and spaced apart from, the primary conductor.
    Type: Application
    Filed: April 29, 2002
    Publication date: October 30, 2003
    Applicant: PRI AUTOMATION, INC
    Inventors: Floyd O. Arntz, Ian S. Roth, Marcel P. J. Gaudreau, Brian J. Doherty
  • Publication number: 20020027205
    Abstract: A novel plasma treatment method (800, 814). The method includes forming an rf plasma discharge in a vacuum chamber. The plasma discharge includes an inductive coupling structure, which has a first cusp region at a first end of the structure and a second cusp region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included. The first cusp region is provided by a first electro-magnetic source and the second cusp region is provided by a second-electro magnetic source. The first electro-magnetic source and the second electro-magnetic source confines a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber. Accordingly, a plasma discharge is substantially a single ionic species (e.g., H1+) can be formed.
    Type: Application
    Filed: June 5, 2001
    Publication date: March 7, 2002
    Inventors: Wei Liu, Michael A. Bryan, Ian S. Roth
  • Patent number: 6300227
    Abstract: A novel plasma treatment method (800, 814). The method includes forming an rf plasma discharge in a vacuum chamber. The plasma discharge includes an inductive coupling structure, which has a first cusp region at a first end of the structure and a second cusp region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included. The first cusp region is provided by a first electro-magnetic source and the second cusp region is provided by a second-electro magnetic source. The first electro-magnetic source and the second electro-magnetic source confines a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber. Accordingly, a plasma discharge is substantially a single ionic species (e.g., H1+) can be formed.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: October 9, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Wei Liu, Michael A. Bryan, Ian S. Roth
  • Publication number: 20010017109
    Abstract: A novel plasma treatment system (200). The plasma treatment system has a chamber (14), where a vacuum is maintained. The system also has a susceptor disposed within an interior region in the chamber. The susceptor (i.e., electrostatic chuck) is adapted to secure a work piece thereon. The system has an rf source (40) disposed overlying the susceptor. The rf source provides an inductive discharge to form a plasma from a gas within the chamber. Magnetic sources (207), (209) are selectively applied to the plasma discharge. In a specific embodiment, a first magnetic source (207) is disposed surrounding the susceptor in the chamber. The first magnetic source provides focused magnetic field lines toward the susceptor. A second magnetic source (209) is disposed surrounding the susceptor, where the second magnetic source provides focussed magnetic field lines toward the susceptor.
    Type: Application
    Filed: November 29, 1999
    Publication date: August 30, 2001
    Inventors: WEI LIU, MICHAEL A. BRYAN, IAN S. ROTH, CHUNG CHAN
  • Publication number: 20010002584
    Abstract: A novel plasma treatment system (200). The plasma treatment system has a chamber (14), where a vacuum is maintained. The system also has a susceptor disposed within an interior region in the chamber. The susceptor (i.e., electrostatic chuck) is adapted to secure a work piece thereon. The system has an rf source (40) disposed overlying the susceptor. The rf source provides an inductive discharge to form a plasma from a gas within the chamber. Magnetic sources (207), (209) are selectively applied to the plasma discharge. In a specific embodiment, a first magnetic source (207) is disposed surrounding the susceptor in the chamber. The first magnetic source provides focused magnetic field lines toward the susceptor. A second magnetic source (209) is disposed surrounding the susceptor, where the second magnetic source provides focussed magnetic field lines toward the susceptor.
    Type: Application
    Filed: December 1, 1998
    Publication date: June 7, 2001
    Inventors: WEI LIU, MICHAEL A. BRYAN, IAN S. ROTH
  • Patent number: 6213050
    Abstract: A novel plasma treatment system (200) including one or more novel computer codes. These codes provide a high density plasma for plasma immersion ion implantation applications.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: April 10, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Wei Liu, Michael A. Bryan, Ian S. Roth
  • Patent number: 4494043
    Abstract: An ionizable material is ejected in the shape of a cylindrical column from a cathode-nozzle toward an anode and subjected to a very short, high voltage pulse of electrical current having sufficient magnitude to create a high magnetic field which implodes the cylindrical column of ionizable material to a very high density plasma that emits long wave length x-rays. Accurate and reliably reproduced x-ray bursts are provided through coupling of the cathode and anode to the high voltage pulse generator without substantially degrading the pulse. The conductors between the pulse generator and the cathode and anode are of a configuration whereby a magnetic field is used to prevent the electron losses by tapering the spacing between feed conductors and shaping the feed conductors so that space-charge flow is retrapped and made usable.
    Type: Grant
    Filed: July 2, 1981
    Date of Patent: January 15, 1985
    Assignee: Physics International Company
    Inventors: Charles H. Stallings, Richard L. Schneider, Frederick K. Childers, Stephen M. Matthews, Ian S. Roth, Heikki I. Helava, Ray M. Stringfield, Jr.