Abstract: A method of cleaving a semiconductor wafer comprising a deep ion implantation induced selective area of exfoliation. The method includes steps of selectively masking the material with a mask having edges parallel to natural cleavage planes of the semiconductor material, implanting unmasked regions of the material with light ions of hydrogen or helium, and annealing to cause exfoliation of the material from the implanted regions. As a result of exfoliation, the patterned structure remaining on the wafer and pieces of the exfoliated material have high quality sidewall-facets which provides cleaved facets along the cleavage planes of the material. A method of manufacturing optoelectronic devices and semiconductor laser devices is provided.

Abstract: A method of patterning a brittle material, and particularly a semiconductor material, is provided comprising ion implantation induced selective area exfoliation. The method includes steps of masking the material, implanting unmasked regions of the material, with light ions of Hydrogen or Helium, and rapid thermal annealing at the temperature causing exfoliation of the material from the implanted regions. As a result, the material is patterned to a depth determined by the depth of ion implantation. The method allows patterning through crystalline or non-crystalline materials, or several layers of different materials at the same time. When the mask has straight sharp edges aligned parallel to natural cleavage planes of the semiconductor material, the exfoliation results in formation of high quality sidewall-facets of exfoliated material and of the remaining patterned material at the boundaries of exfoliated regions.