Abstract: An electrochemical system and method are disclosed for On Site Generation (OSG) of oxidants, such as free available chlorine, mixed oxidants and persulfate. Operation at high current density, using at least a diamond anode, provides for higher current efficiency, extended lifetime operation, and improved cost efficiency. High current density operation, in either a single pass or recycle mode, provides for rapid generation of oxidants, with high current efficiency, which potentially allows for more compact systems. Beneficially, operation in reverse polarity for a short cleaning cycle manages scaling, provides for improved efficiency and electrode lifetime and allows for use of impure feedstocks without requiring water softeners. Systems have application for generation of chlorine or other oxidants, including mixed oxidants providing high disinfection rate per unit of oxidant, e.g. for water treatment to remove microorganisms or for degradation of organics in industrial waste water.

Abstract: An electrochemical system and method are disclosed for On Site Generation (OSG) of oxidants, such as free available chlorine, mixed oxidants and persulfate. Operation at high current density, using at least a diamond anode, provides for higher current efficiency, extended lifetime operation, and improved cost efficiency. High current density operation, in either a single pass or recycle mode, provides for rapid generation of oxidants, with high current efficiency, which potentially allows for more compact systems. Beneficially, operation in reverse polarity for a short cleaning cycle manages scaling, provides for improved efficiency and electrode lifetime and allows for use of impure feedstocks without requiring water softeners. Systems have application for generation of chlorine or other oxidants, including mixed oxidants providing high disinfection rate per unit of oxidant, e.g. for water treatment to remove microorganisms or for degradation of organics in industrial waste water.

Abstract: An improved microelectromechanical switch assembly comprises a linearly movable switch rod constrained via a switch bearing, the switch rod being actuated by electrostatic deflection. Movement of the switch rod to one end of its travel puts the switch assembly in a closed state while movement of the switch rod to the other end of its travel puts the switch assembly in an open state. In an embodiment of the invention, one or both of the switch rod and the switch bearing are fabricated of a carbon nanotube. The improved microelectromechanical switch assembly provides low insertion loss and long lifetime in an embodiment of the invention.

Abstract: Provided is a polishing apparatus and polishing pad, intended for polishing a substrate, and designed for improved flow and distribution of a polishing composition to the area of interaction between the pad and substrate. In one aspect, a polishing pad is provided having first and second pluralities of unidirectional pores configured to communicate polishing composition between the top and bottom surfaces of the pad. A cyclic flow of composition is established to continuously renew composition to the area of interaction between the pad and the substrate. In another aspect, a polishing apparatus is provided having a polishing composition transfer region between a polishing pad and a platen. Pores disposed through the pad communicate composition from the transfer region to the top surface. To facilitate directing the composition into the pores, the apparatus includes a plurality of protrusions protruding into the transfer region that are aligned with the pores.

Abstract: A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit includes two or more electrically connected integrated circuits, separated by a cooling channel.

Abstract: A technique for in situ monitoring of polishing processes and other material removal processes employs a quartz crystal nanobalance embedded in a wafer carrier. Material removed from the wafer is deposited upon the surface of the crystal. The resulting frequency shift of the crystal gives an indication of the amount of material removed, allowing determination of an instantaneous removal rate as well as a process endpoint. The deposition on the quartz crystal nanobalance may be controlled by an applied bias. Multiple quartz crystal nanobalances may be used. In a further embodiment of the invention, the quartz crystal nanobalance is used to detect defect-causing events, such as a scratches, during the polishing process.

Abstract: A process is provided for forming a bipolar transistor and a structure thereof. In particular a single polysilicon self-aligned process for a bipolar transistor having a polysilicon emitter is provided. A sacrificial layer defining an opening is provided in a device well region of a substrate, and, after forming a self-aligned base region within the opening, emitter material is selectively provided in the opening to form an emitter-base junction. The sacrificial layer functions as a mask for ion implantations to form the base region, and if required, an underlying local collector region. The sacrificial layer is removed, to expose the well region adjacent sidewalls of the emitter structure. A self-aligned link region implant may be performed before forming isolation on exposed sidewalls of the emitter structure. Extrinsic base contacts are formed in the surface of the surrounding well region.

Abstract: A process is provided for forming a bipolar transistor and a structure thereof. In particular a single polysilicon self-aligned process for a bipolar transistor having a polysilicon emitter is provided. A sacrificial layer defining an opening is provided in a device well region of a substrate, and, after forming a self-aligned base region within the opening, emitter material is selectively provided in the opening to form an emitter-base junction. The sacrificial layer functions as a mask for ion implantations to form the base region, and if required, an underlying local collector region. The sacrificial layer is removed, to expose the well region adjacent sidewalls of the emitter structure. A self-aligned link region implant may be performed before forming isolation on exposed sidewalls of the emitter structure. Extrinsic base contacts are formed in the surface of the surrounding well region.