Abstract: An integrated circuit includes laterally adjacent first and second devices. The first device includes a first source or drain region, a first gate structure, and a first inner spacer between the first source or drain region and the first gate structure. The second device includes a second source or drain region, a second gate structure, and a second inner spacer between the second source or drain region and the second gate structure. In an example, the first source or drain region has a width that is at least 1 nanometer different from a width of the second source or drain region, and/or the first inner spacer has a width that is at least 1 nanometer different from a width of the second inner spacer. The various widths are measured in a direction of a semiconductor body between the first source or drain region and the first gate structure.

Abstract: Devices, transistor structures, systems, and techniques are described herein related to gate all around field effect transistors having a stack of nanoribbons (i.e., semiconductor structures) with thicknesses that are tuned to vary across the stack. The nanoribbon source-to-drain lengths are from a source interface to a drain interface with source and drain structures, respectively, and the thickness is orthogonal to the source-to-drain lengths in alignment with the vertical stacking of the nanoribbons. The nanoribbons have differing thicknesses across the stack of nanoribbons of the field effect transistor.

Abstract: An integrated circuit includes laterally adjacent first and second devices. The first device includes a first source or drain region, a first gate structure, and a first inner spacer between the first source or drain region and the first gate structure. The second device includes a second source or drain region, a second gate structure, and a second inner spacer between the second source or drain region and the second gate structure. In an example, the first source or drain region has a width that is at least 1 nanometer different from a width of the second source or drain region, and/or the first inner spacer has a width that is at least 1 nanometer different from a width of the second inner spacer.