Patents by Inventor Ian Yang

Ian Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11991566
    Abstract: A device implementing the subject technology may include at least one processor configured to transmit an allocation request requesting allocation of a group communication session with a plurality of devices and receive an allocation response in response to the allocation request, the allocation response including credential information for the device to use to join the group communication session. The at least one processor may be further configured to transmit an allocation bind request with the credential information to join the group communication session using the credential information and receive an allocation bind success response in response to the allocation bind request, the allocation bind success response indicating that the device has joined the group communication session. The at least one processor may be further configured to provide a join notification to the plurality of devices via an intermediary device to notify that the device has joined the group communication session.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: May 21, 2024
    Assignee: Apple Inc.
    Inventors: Joe S. Abuan, Ian J. Baird, Xiaosong Zhou, Christopher M. Garrido, Dazhong Zhang, Keith W. Rauenbuehler, Yan Yang, Patrick Miauton, Eric L. Chien, Berkat S. Tung, Karthick Santhanam
  • Patent number: 11989364
    Abstract: Techniques for managing alerts are described. One or more alerts are received at the electronic device. In some embodiments, the device determines how notifications corresponding to the alerts should be output to the user.
    Type: Grant
    Filed: June 8, 2022
    Date of Patent: May 21, 2024
    Assignee: Apple Inc.
    Inventors: Lawrence Y. Yang, Stephen O. Lemay, Alan C Dye, Christopher Patrick Foss, Jonathan R. Dascola, Imran Chaudhri, Gary Ian Butcher, David Chance Graham, Jonathan P. Ive, Kevin Lynch, Natalia Maric
  • Patent number: 11971862
    Abstract: In one embodiment, a method includes receiving a first network event corresponding to a first transaction, the first network event being assigned a unique transaction group identifier, authorizing the first transaction based on a balance value of a ledger account recorded in an account ledger, recording a first update in the account ledger, comprising recording the unique transaction group identifier in association with the first update and the ledger account and modifying the balance value of the ledger account, receiving a second network event corresponding to a second transaction, determining that a unique transaction group identifier assigned to the second network event matches the unique transaction group identifier associated with the first update and the ledger account, and recording a second update in the account ledger, comprising recording the unique transaction group identifier in association with the second update without modifying the balance value of the ledger account.
    Type: Grant
    Filed: September 20, 2022
    Date of Patent: April 30, 2024
    Assignee: Lithic, Inc.
    Inventors: Yi Lun Han, Ian Boynton, Xiaojing Yang
  • Patent number: 11973205
    Abstract: An energy storage system includes an energy storage component. It further includes heat generating electronics. It further includes a fluid circulator that transfers fluid between the energy storage component and the heat generating electronics. The circulator is controlled to alternatively transfer fluid from the battery to the heat generating electronics or from the heat generating electronics to the energy storage component based at least in part on a thermal state of the energy storage system.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: April 30, 2024
    Assignee: Lunar Energy, Inc.
    Inventors: Bozhi Yang, Tanner Bruce DeVoe, Tahina Christine Felisca, Kevin Richard Fine, Mark Daniel Goldman, Mark Holveck, Erica Viola Lewis, Conrad Xavier Murphy, Ian Gregory Spearing
  • Publication number: 20240071831
    Abstract: An integrated circuit includes laterally adjacent first and second devices. The first device includes a first source or drain region, a first gate structure, and a first inner spacer between the first source or drain region and the first gate structure. The second device includes a second source or drain region, a second gate structure, and a second inner spacer between the second source or drain region and the second gate structure. In an example, the first source or drain region has a width that is at least 1 nanometer different from a width of the second source or drain region, and/or the first inner spacer has a width that is at least 1 nanometer different from a width of the second inner spacer.
    Type: Application
    Filed: August 26, 2022
    Publication date: February 29, 2024
    Applicant: INTEL CORPORATION
    Inventors: Chang Wan Han, Biswajeet Guha, Vivek Thirtha, William Hsu, Ian Yang, Oleg Golonzka, Kevin J. Fischer, Suman Dasgupta, Sameerah Desnavi, Deepak Sridhar
  • Patent number: 8541789
    Abstract: Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: September 24, 2013
    Assignee: Epistar Corporation
    Inventors: Chiu Lin Yao, Ya Ian Yang
  • Publication number: 20110121287
    Abstract: Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100.
    Type: Application
    Filed: November 19, 2010
    Publication date: May 26, 2011
    Inventors: Chiu Lin Yao, Ya Ian Yang