Patents by Inventor Ian Yang

Ian Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SOURCE AND DRAIN REGIONS FOR LATERALLY ADJACENT GATE-ALL-AROUND (GAA) PMOS AND NMOS
    Publication number: 20240071831
    Abstract: An integrated circuit includes laterally adjacent first and second devices. The first device includes a first source or drain region, a first gate structure, and a first inner spacer between the first source or drain region and the first gate structure. The second device includes a second source or drain region, a second gate structure, and a second inner spacer between the second source or drain region and the second gate structure. In an example, the first source or drain region has a width that is at least 1 nanometer different from a width of the second source or drain region, and/or the first inner spacer has a width that is at least 1 nanometer different from a width of the second inner spacer.
    Type: Application
    Filed: August 26, 2022
    Publication date: February 29, 2024
    Applicant: INTEL CORPORATION
    Inventors: Chang Wan Han, Biswajeet Guha, Vivek Thirtha, William Hsu, Ian Yang, Oleg Golonzka, Kevin J. Fischer, Suman Dasgupta, Sameerah Desnavi, Deepak Sridhar
  • Light-emitting device with patterned current diffusion layer
    Patent number: 8541789
    Abstract: Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: September 24, 2013
    Assignee: Epistar Corporation
    Inventors: Chiu Lin Yao, Ya Ian Yang
  • LIGHT-EMITTING DEVICES AND METHODS FOR MANUFACTURING THE SAME
    Publication number: 20110121287
    Abstract: Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100.
    Type: Application
    Filed: November 19, 2010
    Publication date: May 26, 2011
    Inventors: Chiu Lin Yao, Ya Ian Yang