Abstract: The invention pertains to a method for efficiently spitting water into hydrogen and oxygen using a nanocomposite that includes ((BiVO4)x—(TiO2)1-x, wherein x ranges from 0.08 to 0.12, and optionally silver nanoparticles; methods for making a nanocomposite used in this method by a simple solvothermal method; and to photoanodes and photoelectrochemical cells and devices containing the nanocomposites.

Abstract: A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per ?m2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

Abstract: A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per ?m2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

Abstract: A copolymer containing carbazole- and cyanovinylene-based moieties, a photoelectrode comprising a metal oxide substrate and the copolymer as a photoelectrocatalyst component to the photoelectrode, as well as a photoelectrochemical cell including the photoelectrode. Methods of producing the copolymers, and methods of using the photoelectrochemical cell to produce hydrogen gas and oxygen gas through water splitting are also provided.

Abstract: A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per ?m2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

Abstract: A one dimensional (1D) nanoarray of SnO nanostrucutres on a substrate is disclosed. The nanostructures of SnO have diameters of 200 nm-1 ?m and lengths of 500 nm-3 ?m, and are attached to and substantially perpendicular to the substrate. The one-dimensional nanoarray may have a nanostructure density of 220-300 nanostructures per 100 ?m2 substrate and a band gap energy of 2.36-2.46 eV. The one-dimensional nanoarray may be formed by anodization of Sn foil in an electrochemical cell subjected to a voltage of 15-25 V for 1-3 hours at room temperature. The formed one-dimensional nanoarray may be used for the photo-electrochemical decomposition of water into O2 and H2.

Abstract: A copolymer containing carbazole-based and vinylene based moieties, a photoelectrode comprising a metal oxide substrate and the copolymer as a photoelectrocatalyst component to the photoelectrode, as well as a photoelectrochemical cell including the photoelectrode. Methods of producing the copolymers, and methods of using the photoelectrochemical cell to produce hydrogen gas are also provided.

Abstract: Techniques and mechanism to provide signal communication with vias variously extending in a substrate. In an embodiment, a first capacitor and a second capacitor are coupled in parallel with one another each between a first via and a second via, the first via to receive a first signal. Respective portions of the first signal are concurrently communicated from the first via to the second via with the first capacitor and the second capacitor, respectively. In another embodiment, the first signal is one signal of a differential signal pair further comprising a second signal which is received at a third via. Respective portions of the second signal are concurrently communicated from the third via to a fourth via with a third capacitor and a fourth capacitor, respectively. The third capacitor and the fourth capacitor are coupled in parallel with one another each between the third via and the fourth via.

Abstract: Techniques and mechanism to provide signal communication with vias variously extending in a substrate. In an embodiment, a first capacitor and a second capacitor are coupled in parallel with one another each between a first via and a second via, the first via to receive a first signal. Respective portions of the first signal are concurrently communicated from the first via to the second via with the first capacitor and the second capacitor, respectively. In another embodiment, the first signal is one signal of a differential signal pair further comprising a second signal which is received at a third via. Respective portions of the second signal are concurrently communicated from the third via to a fourth via with a third capacitor and a fourth capacitor, respectively. The third capacitor and the fourth capacitor are coupled in parallel with one another each between the third via and the fourth via.

Abstract: Applicators for inserting feminine care devices into the body are provided. The applicators include an applicator barrel having unique insertion tip designs. The insertion tips employ a plurality of petals that can have an inflection or bending point above the bases of the petals.

Abstract: Included are systems and methods for modeling compliant parts. Some of the systems and/or methods include creating a 3-dimensional simulation of a product that includes an outer part and an inner part, determining a deformation characteristic of the product, and simulating an interaction of the inner part with the outer part. Similarly, in some of the systems and/or methods a characteristic of interaction may be measured from the interaction, a determination may be made regarding whether the characteristic of interaction meets a predetermined threshold. In some of the systems and/or methods, in response to determining that the characteristic of interaction meets the predetermined threshold, an output may be sent indicating product design acceptability. In response to determining that the characteristic of interaction does not meet the predetermined threshold, the 3-dimensional simulation may be iteratively altered until the characteristic of interaction meets the predetermined threshold.

Abstract: Applicators for inserting feminine care devices into the body are provided. The applicators include an applicator barrel having unique insertion tip designs. The insertion tips employ a plurality of petals that can have an inflection or bending point above the bases of the petals.

Abstract: Included are systems and methods for modeling compliant parts. Some of the systems and/or methods include creating a 3-dimensional simulation of a product that includes an outer part and an inner part, determining a deformation characteristic of the product, and simulating an interaction of the inner part with the outer part. Similarly, in some of the systems and/or methods a characteristic of interaction may be measured from the interaction, a determination may be made regarding whether the characteristic of interaction meets a predetermined threshold. In some of the systems and/or methods, in response to determining that the characteristic of interaction meets the predetermined threshold, an output may be sent indicating product design acceptability. In response to determining that the characteristic of interaction does not meet the predetermined threshold, the 3-dimensional simulation may be iteratively altered until the characteristic of interaction meets the predetermined threshold.

Abstract: A method of forming an integrated circuit includes providing a semiconductor substrate and forming a gate over the semiconductor substrate. A gate sidewall spacer is formed around the gate and a resist is deposited on the gate sidewall spacer with the gate sidewall spacer and the gate exposed. A portion of the gate within the gate sidewall spacer is removed and a gate silicide is formed within the curved gate sidewall spacer. A dielectric layer is formed over the gate silicide and a contact is formed to the gate silicide.

Abstract: A spray head for attachment to an aerosol container containing pressurized product is provided, the spray head comprising conduit means, more than one separate spray outlet and a splitting chamber for diverting the flow to the spray outlets, wherein the conduit means comprise inlet means for attachment to a valve stem of the aerosol spray unit and conduit outlet means which are in direct fluid communication with the splitting chamber, wherein the splitting chamber is in fluid communication with the spray outlets and wherein, for each spray outlet, the ratio, L1/L2, of the distance (L1) between the conduit outlet means and the spray outlet to the distance (L2) between the inlet means and the spray outlet is in the range 0.01 to 0.6.

Abstract: A spray head for attachment to an aerosol spray unit containing pressurized product is provided, the spray head having at least two separate spray outlets, wherein at least one of the spray outlets has a non-circular cross-section.

Abstract: A strap for securing an exhaust treatment device is disclosed. The strap may have a coupler on a first end and a loop on a second end. The loop may include an inner portion, a curved portion, and an outer portion of the strap. The outer portion of the strap may be secured to the inner portion of the strap at a point of securement to form the loop. The outer portion may form an angle with respect to the inner portion that is no greater than about 10 degrees as the outer portion diverges from abutting the inner portion.

Abstract: A method of forming an integrated circuit includes providing a semiconductor substrate and forming a gate over the semiconductor substrate. A gate sidewall spacer is formed around the gate and a resist is deposited on the gate sidewall spacer with the gate sidewall spacer and the gate exposed. A portion of the gate within the gate sidewall spacer is removed and a gate silicide is formed within the curved gate sidewall spacer. A dielectric layer is formed over the gate silicide and a contact is formed to the gate silicide.

Abstract: A method of forming an integrated circuit includes providing a semiconductor substrate and forming a gate over the semiconductor substrate. A gate sidewall spacer is formed around the gate and a resist is deposited on the gate sidewall spacer with the gate sidewall spacer and the gate exposed. A portion of the gate within the gate sidewall spacer is removed and a gate silicide is formed within the curved gate sidewall spacer. A dielectric layer is formed over the gate silicide and a contact is formed to the gate silicide.