Abstract: A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled.

Abstract: A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled.

Abstract: A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.

Abstract: A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.

Abstract: A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply.

Abstract: Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase.

Abstract: A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the plasma distribution is nearly symmetrical, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution is nearly uniform.

Abstract: A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece.

Abstract: A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry.

Abstract: A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry.

Abstract: A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.

Abstract: A plasma processing system for processing a planar workpiece is provided that has the capability of changing the rotational position of a workpiece relative to a plasma processing chamber of the system. The system workpiece transfer apparatus coupled to the reactor chambers of the system. The workpiece transfer apparatus is capable of transferring workpieces to and from each of the chambers. The system further includes a factory interface coupled to the workpiece transfer apparatus for transferring workpieces from and to a factory environment external of the plasma processing system. The factory interface includes (a) a frame defining an internal volume, (b) a rotatable and translatable arm supported on the frame within the internal volume, (c) a workpiece-handling blade attached to an outer end of the arm, and (d) a stationary workpiece-holding support bracket that facilitates rotation of a workpiece.

Abstract: A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply.

Abstract: A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.

Abstract: A portable apparatus for applying cyclic pressure to veins within a person's leg by applying cyclic pressure to an outer surface of the leg, the apparatus comprising a first air chamber having a flexible wall portion adapted to be situated adjacent an outer surface of the leg, a second air chamber adapted to be positioned beneath the person's heel, this second chamber being compressible to force air out of it when the person's heel bears downward thereon and returnable to its uncompressed state when the downward heel force is removed therefrom, and conduit means for permitting air flow between the first and second air chambers, whereby air flows from the second chamber into the first chamber and pressure is cyclically increased in the first chamber urging the wall portion against the leg when the person's heel presses downward on the second chamber, and air flows from the first to second chamber and pressure on the leg is reduced when the person's heel stops pressing on the second chamber.

Abstract: A vascular graft prosthesis of woven synthetic yarn where selected fill threads are woven into S-shaped lock elements about selected warp threads to provide a tubular fabric that resists fraying when cut at an oblique angle.

Abstract: A woven tubular vascular prosthesis having alternating plain/twill weave and two pairs of double leno weave of texturized synthetic fiber of 64 denier/144 filament has sufficiently low porosity that preclotting is unnecessary to avoid hemorrhaging and unravelling is prevented even where the graft is cut at an oblique angle.

Abstract: An apparatus for injecting a radiopaque dye into an artery of a patient during intraoperative arteriography, where the plunger of a syringe containing the injectate is driven by a separate but connected hydraulic sub-system operated by a surgeon who is at a location that is remote and safe from the radiation, and where the hydraulic sub-system provides for the surgeon, the feel and control of a conventional syringe operated manually in the immediate vicinity of the patient.