Patents by Inventor I-Chang Lin

I-Chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11966133
    Abstract: An electronic device is disclosed. The electronic device includes a substrate, a plurality of color filters disposed on the substrate, an optical film disposed on the plurality of color filter, and a defect disposed between the substrate and the optical film. The optical film has a first base, a protective layer on the first base, and a second base between the first base and the protective layer and having a first processed area. In a top view of the electronic device, the first processed area corresponds to the defect and at least partially overlaps at least two color filters.
    Type: Grant
    Filed: May 18, 2023
    Date of Patent: April 23, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Tai-Chi Pan, Chin-Lung Ting, I-Chang Liang, Chih-Chiang Chang Chien, Po-Wen Lin, Kuang-Ming Fan, Sheng-Nan Chen
  • Patent number: 11935969
    Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: March 19, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Shih-Chang Lee, Shiuan-Leh Lin, I-Hung Chen, Chu-Jih Su, Chao-Shun Huang
  • Patent number: 9142709
    Abstract: A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: September 22, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shou-Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
  • Publication number: 20140357010
    Abstract: A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.
    Type: Application
    Filed: August 19, 2014
    Publication date: December 4, 2014
    Inventors: Shou-Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
  • Patent number: 8815723
    Abstract: A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: August 26, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shou Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
  • Publication number: 20130082342
    Abstract: The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, a method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface; forming a light sensing region at the first surface of the substrate; forming a doped layer at the second surface of the substrate; and after forming the doped layer, polishing the second surface of the substrate.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shou Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
  • Publication number: 20130084660
    Abstract: A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.
    Type: Application
    Filed: December 22, 2011
    Publication date: April 4, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shou Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
  • Patent number: 5173318
    Abstract: A method for aging a fermented product includes the steps of: (a) cooling the fermented product in a container; (b) introducing ozone in the cooled fermented product for oxidation; and (c) applying an ultrasonic vibration to the container to vibrate and heat the fermented product in step (b) for oxidizing the fermented product. An aging device for a fermented product includes: an aging tank for containing the fermented product, the aging tank having an inlet and an outlet for the fermented product; an ozone supplying unit having an inlet pipe and an outlet pipe which are connected to the aging tank; a cooling unit mounted to the aging tank; an ultrasonic vibration unit mounted to the aging tank; and a thermometer mounted on the aging tank to detect the temperature of the fermented product.
    Type: Grant
    Filed: May 30, 1991
    Date of Patent: December 22, 1992
    Assignees: Sheng-I Leu, I-Chang Lin, Chen-Shun Chen, Jhy-Ming Lee
    Inventors: Sheng-I Leu, I-Chang Lin, Ching-Yu Chen, Chen-Shun Chen