Patents by Inventor Ichiro Arimoto

Ichiro Arimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040039584
    Abstract: A selecting method includes the steps of receiving pattern-forming area 100% region data and unit price data from a mask manufacturer's computer, extracting a 100% code that matches a condition based on the pattern-forming area 100% region data if data are received from computers of at least a predetermined number of mask manufacturers, calculating a pattern-forming area ratio based on a pattern-forming 100% region of the extracted 100% code and a pattern-forming region of the pattern-forming area data, calculating a unit price from a pattern-forming area ratio based on the unit price data and pattern-forming area ratio, and determining a mask manufacturer to which an order is sent based on the calculated unit price.
    Type: Application
    Filed: January 24, 2003
    Publication date: February 26, 2004
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masayoshi Mori, Kunihiro Hosono, Ichiro Arimoto, Yuko Kikuta
  • Patent number: 5561495
    Abstract: A level F.sub.A at a shot center of a specified shot is measured. A level F.sub.B is measured at a nonexposure region. A level difference .DELTA.F is calculated based on the level F.sub.A at the shot center and the level F.sub.B at the nonexposure region. After the level difference .DELTA.F is calculated for all the specified shots, an average value .DELTA.F.sub.ave of level differences .DELTA.F is calculated. Thereafter, focusing based on the average value .DELTA.F.sub.ave and subsequent exposure are executed for the respective shots in a step-and-repeat manner. Thereby, a focusing method in photolithography enables formation of elements having good pattern configuration even if the pattern is miniaturized to a higher extent in accordance with high integration.
    Type: Grant
    Filed: May 25, 1995
    Date of Patent: October 1, 1996
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Eiichi Ishikawa, Ichiro Arimoto, Junichi Kanbe
  • Patent number: 5311709
    Abstract: A hydraulic variable damping device for installation in the frame of a structure to control vibrations while evaluating the damping property of the structure during seismic disturbances. Control means for this device include a command value judging circuit for comparing the plus or minus sign of a differential pressure value between hydraulic chambers within the device with that of a generated damping force command value to output a valve opening command value for fully opening a flow regulating valve when the signs of the command value and the differential pressure value are different from each other. A pressure controller is provided for making a correction based on the feedback of the pressure valve when the signs of the damping force command value and the differential pressure value are the same to generate a valve opening command value.
    Type: Grant
    Filed: December 17, 1992
    Date of Patent: May 17, 1994
    Assignees: Kajima Corporation, Kawasakijukogyo Kabushiki Kaisha
    Inventors: Takuji Kobori, Yoshinori Matsunaga, Naoki Niwa, Takayuki Mizuno, Hironori Sasaki, Ichiro Arimoto, Naoshi Shinohara
  • Patent number: 5234859
    Abstract: A LOCOS isolation film is formed on a major surface of a semiconductor substrate. Thereafter, a new surface of the semiconductor substrate is exposed by wet etching. A resist pattern is formed on the exposed new surface. A part of the LOCOS isolation film is removed using this resist pattern, to expose the surface of the semiconductor substrate. This unsymmetrical LOCOS isolation film increases the effective area of the surface of the semiconductor substrate and preserves predetermined dielectric resistance.
    Type: Grant
    Filed: September 3, 1991
    Date of Patent: August 10, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tomoharu Mametani, Ritsuko Tsutsumi, Ichiro Arimoto, Masami Yamamoto
  • Patent number: 5065218
    Abstract: A LOCOS isolation film is formed on a major surface of a semiconductor substrate. Thereafter, a new surface of the semiconductor substrate is exposed by wet etching. A resist pattern is formed on the exposed new surface. A part of the LOCOS isolation film is removed using this resist pattern, to expose the surface of the semiconductor substrate. This unsymmetrical LOCOS isolation film increases the effective area of the surface of the semiconductor substrate and preserves predetermined dielectric resistance.
    Type: Grant
    Filed: June 23, 1989
    Date of Patent: November 12, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Ichiro Arimoto, Masami Yamamoto, Tomoharu Mametani, Ritsuko Tsutsumi, Ritsuko Tsutsumi, Ichiro Arimoto, Masami Yamamoto