Abstract: An object of the present invention is to provide an ink composition having a high permeability as an inkjet ink and permitting high quality image printing even with a high speed. To achieve the above object, the present invention provides an ink composition comprising: (a) an aqueous medium having a conductivity of 250 ?S/cm (at 25° C.) or lower; (b) a pigment; and (c) a compound represented by the formula (I): wherein m and n each are an integer of 0-11; m+n is an integer of 9-11; x is an integer of 5-9; and y is a number between 2.5-5.

Abstract: The present invention provides ink for inkjet recording containing ethylene glycol base ether and/or monovalent alkyl alcohol, a surfactant and a coloring agent, the ink showing the following characteristics when 2 ?l of the ink is dropped on a piece of ordinary paper having smoothness of 100 sec or lower: a) an initial contact angle is in the range of 30 to 80°; b) a dynamic contact angle after 1 second X=???o (? is a dynamic contact angle after 1 second) according to dynamic absorption measurement is in the range of ?70?X??20 (°/s); and c) the rate of change of a dot area after t second (0.1<t<5(s)) Y=rt2/ro2 (rt is a dot radius after t second) is in the range of 1.5<Y. With this ink, clear images which are less prone to smear are produced even by high speed recording on a piece of ordinary paper.

Abstract: An image recording apparatus based on a color ink-jet scheme provided with an ink set consisting of one or more than one colors of inks and a black ink and an ink-jet printing unit, wherein the initial contact angles &thgr;0 of two colors of inks, namely, a color ink and a black ink, fall within the range from 30 to 80°, the contact angle variation Xa of the ink A as obtained by the dynamic liquid absorption measurement after the elapsed time of 1 second falls within the range −70<Xa<−10(°), the dot area ratio Ya of the ink A after the elapsed time of ta seconds-falls in the range 1.5<Ya, the contact angle variation Xb of the ink B as obtained by the dynamic liquid absorption measurement after the elapsed time of 1 second falls within the range −15<Xb<0(°), and the dot area ratio Yb of the ink B after the elapsed time of tb seconds falls within the range 1.0<Yb<1.7, where printing is made first with the ink A and subsequently with the ink B.

Abstract: An image recording apparatus based on a color ink-jet scheme provided with an ink set consisting of one or more than one colors of inks and a black ink and an ink-jet printing unit, wherein the initial contact angles &thgr;0 of two colors of inks, namely, a color ink and a black ink, fall within the range from 30 to 80°, the contact angle variation Xa of the ink A as obtained by the dynamic liquid absorption measurement after the elapsed time of 1 second falls within the range −70<Xa<−10(°), the dot area ratio Ya of the ink A after the elapsed time of ta seconds-falls in the range 1.5<Ya, the contact angle variation Xb of the ink B as obtained by the dynamic liquid absorption measurement after the elapsed time of 1 second falls within the range −15<Xb<0(°), and the dot area ratio Yb of the ink B after the elapsed time of tb seconds falls within the range 1.0<Yb<1.7, where printing is made first with the ink A and subsequently with the ink B.

Abstract: The present invention provides ink for inkjet recording containing ethylene glycol base ether and/or monovalent alkyl alcohol, a surfactant and a coloring agent, the ink showing the following characteristics when 2 &mgr;l of the ink is dropped on a piece of ordinary paper having smoothness of 100 sec or lower:

Abstract: A photocell for detecting light includes at least two tiers or structures, one disposed over the other, each tier having a metal-insulator-semiconductor (M-I-S) or a semiconductor-insulator-metal (S-I-M) structure. Each M-I-S structure includes a semiconductor diffusion layer capable of developing a depletion region, a thin insulator layer disposed on the diffusion layer, and a contact layer disposed on the thin insulator layer. Each S-I-M structure includes a contact layer, a thin insulator layer disposed on the contact layer, and a semiconductor diffusion layer disposed on the thin insulator layer, the semiconductor layer capable of developing a depletion region. When light is incident on each depletion region, a current indicative of the light detected in each depletion region flows through the respective contact layer. Also provided is a semiconductor-insulator-metal (S-I-M) structure that detects light. Two- and three-tiered photocells made of M-I-S and/or S-I-M structures are also provided.

Abstract: A photocell for detecting light includes at least two tiers or structures, one disposed over the other, each tier having a metal-insulator-semiconductor (M-I-S) or a semiconductor-insulator-metal (S-I-M) structure. Each M-I-S structure includes a semiconductor diffusion layer capable of developing a depletion region, a thin insulator layer disposed on the diffusion layer, and a contact layer disposed on the thin insulator layer. Each S-I-M structure includes a contact layer, a thin insulator layer disposed on the contact layer, and a semiconductor diffusion layer disposed on the thin insulator layer, the semiconductor layer capable of developing a depletion region. When light is incident on each depletion region, a current indicative of the light detected in each depletion region flows through the respective contact layer. Also provided is a semiconductor-insulator-metal (S-I-M) structure that detects light. Two- and three-tiered photocells made of M-I-S and/or S-I-M structures are also provided.

Abstract: An underwater laser television, which radiates laser pulses, output from a laser oscillator, to a visualized object under water and detects reflection light of the laser pulses to display an image of the visualized object, is constructed by a main body which is located under water to have a capability of free movement and to resist against the water pressure and which provides a light transmission portion for transmitting the laser pulses and reflection light, the laser oscillator arranged inside of the main body, radiation and light receiving means, arranged in the main body, which radiates the laser pulses toward the visualized object and detects the reflection light to produce video signals of the visualized object, and display means, arranged in the main body, which displays an image of the visualized object based on the video signals.

Abstract: An electronic apparatus such as a tape recorder includes a main body, an input and/or output block, and an attach/detach mechanism. The main body has a first terminal section. The input and/or output block has a second terminal section to be connected to the first terminal section and is detachably mounted on the main body. When the first terminal section is connected to the second terminal section, the input and/or output block is supplied with a signal from the main body through the first and the second terminal sections. The attach/detach mechanism detachably attaches the input and/or output block on the main body. The attach/detach mechanism has at least one engagement section provided on one of the main body and the input and/or output block, an engagable section provided on the other of the main body and the input and/or output block, so as to be engaged with the engagement section, and an urging mechanism for urging the engagement section to be engaged with the engagable section.

Abstract: A crystalline titanyl phthalocyanine having diffraction peaks at least at 7.4.degree., 9.4.degree., 9.7.degree. and 27.3.degree. of Bragg angle (20.+-.0.2.degree.) in X-ray diffraction pattern with a doublet peak at 9.4.degree. or 9.7.degree., one of the diffraction peaks at 9.4.degree. and 9.7.degree. being the maximum.

Abstract: An organic electroluminescent element comprising a substrate are stacked layers thereon of, a positive electrode, a holeinjected carrier layer, a luminescent layer and a negative electrode and optionally an electron-injected carrier layer formed between the luminescent layer and the negative electrode, wherein the hole-injected carrier layer comprising a bis-enamine compound represented by the following formula (I): ##STR1## wherein R.sub.1 and R.sub.2 are, the same or different, a lower alkyl group or an optionally substituted aryl or heterocyclic group, or alternatively, R.sub.1 and R.sub.2 together with the carbon atom to which they are bonded may form a benzocycloalkyl group, the benzene ring being optionally substituted by a substituent or substituents selected from the group consisting of a halogen atom, a lower alkyl group and a lower alkoxy group; R.sub.3 is an optionally substituted aryl or heterocyclic group; and Ar is a methylene group, a vinylene group or an optionally substituted C.sub.

Abstract: To reduce the dark current to be produced in a semiconductor charge-coupled device, the device is fabricated by preparing a layer of a doped semiconductor having an insulator layer thereon, forming a plurality of transfer electrodes on said insulator layer, and reducing the surface state at the interface between said semiconductor layer and said insulator layer at least over its areas underlying the transfer electrodes.

Abstract: To reduce the dark current to be produced in a semiconductor charge-coupled device, the device is fabricated by preparing a layer of a doped semiconductor having an insulator layer thereon, forming a plurality of transfer electrodes on said insulator layer, and reducing the surface state at the interface between said semiconductor layer and said insulator layer at lease over its areas underlying the transfer electrodes.

Abstract: A semiconductor charge-coupled device is fabricated with use of a layer of a doped semiconductor having an insulator layer thereon. Suitable dopant ions such as nitrogen or argon ions are implanted into the doped semiconductor layer so that the projected range of the ions introduced into the semiconductor layer is located substantially at the interface between the doped semiconductor layer and the insulator layer for forming an interlevel layer providing an increased surface state at the aforesaid interface. Where the interlevel layer is formed by implantation of nitrogen ions the structure having the nitrogen ions implanted into the doped semiconductor layer is preferably annealed at a relatively high temperature. The charge-coupled device may be designed either as the surface-channel type or as the buried-channel type with a single-phase, two-phase, three-phase or four-phase driving scheme.

Abstract: A semiconductor charge-coupled device is fabricated with use of a layer of a doped semiconductor having an insulator layer thereon. Suitable dopant ions such as nitrogen or argon ions are implanted into the doped semiconductor layer so that the projected range of the ions introduced into the semiconductor layer is located substantially at the interface between the doped semiconductor layer and the insulator layer for forming an interlevel layer providing an increased surface state at the aforesaid interface. Where the interlevel layer is formed by implantation of nitrogen ions the structure having the nitrogen ions implanted into the doped semiconductor layer is preferably annealed at a relatively high temperature. The charge-coupled device may be designed either as the surface-channel type or as the buried-channel type with a single-phase, two-phase, three-phase or four-phase driving scheme.