Abstract: The invention provides a high purity carbonaceous material which is reduced in contents of oxygen, nitrogen and chlorine readily binding to carbon atoms and in contents of elements, phosphorus, sulfur and boron, readily binding to carbon atoms upon heating and which can be used in producing single crystals such as semiconductors, a high purity carbonaceous material for use as a substrate for ceramic layer coating, and a ceramic layer-coated high purity carbonaceous material. The high purity carbonaceous material has oxygen content of 1×1018 atoms/cm3 or less as determined by SIMS. Its chlorine content is preferably 1×1016 atoms/cm3 or less as determined by SIMS, and its nitrogen content is preferably 5×1018 atoms/cm3 or less as determined by SIMS. Its phosphorus, sulfur and boron contents are preferably not higher than respective specified values. Such a high purity carbonaceous material is coated with ceramic layer.

Abstract: The invention provides a SiC coated carbonaceous material and a carbonaceous material to be coated with SiC each of which is reduced in contents of such impurities as nitrogen and boron. The SiC coated carbonaceous material comprises a carbonaceous material and a SiC coating having a nitrogen content of 5×1016 atoms/cm3 or lower as measured by SIMS. Further, the SiC-coated carbonaceous material comprises a carbonaceous material and a SiC coating having a boron content of 2×1016 atoms/cm3 or lower as measured by SIMS. The carbonaceous substrate material preferably has nitrogen content of 5×1018 atoms/cm3 or lower as measured by SIMS. The base carbonaceous material also preferably has boron content of 1×1016 atoms/cm3 or lower as measured by SIMS.

Abstract: The invention provides a susceptor capable of obtaining high-quality SiC semiconductor crystals by keeping the Si concentration and C concentration around a wafer constant and by preventing the generation of particles. A susceptor of graphite covered with silicon carbide is characterized in that at least one section of a part on which a wafer is placed is tantalum carbide or a graphite material covered with tantalum carbide. The part on which the wafer is placed may be a detachable member. A material around the part on which the wafer is placed may be a detachable graphite material covered with silicon carbide.

Abstract: The invention provides a SiC coated carbonaceous material and a carbonaceous material to be coated with SiC each of which is reduced in contents of such impurities as nitrogen and boron. The SiC coated carbonaceous material comprises a carbonaceous material and a SiC coating having a nitrogen content of 5×1016 atoms/cm3 or lower as measured by SIMS. Further, the SiC-coated carbonaceous material comprises a carbonaceous material and a SiC coating having a boron content of 2×1016 atoms/cm3 or lower as measured by SIMS. The carbonaceous substrate material preferably has nitrogen content of 5×1018 atoms/cm3 or lower as measured by SIMS. The base carbonaceous material also preferably has boron content of 1×1016 atoms/cm3 or lower as measured by SIMS.

Abstract: A low nitrogen content carbon which has a nitrogen concentration according to glow discharge mass spectrometry of 100 ppm or less.

Abstract: The present invention relates to a low nitrogen concentration carbonaceous material with a nitrogen concentration according to glow discharge mass spectrometry of 100 ppm or less, as well as a manufacturing method thereof are provided. A carbonaceous material subjected to a high purification treatment in a halogen gas atmosphere is heat treated under a pressure of 100 Pa or less and at a temperature of 1800° C. or higher, releasing nitrogen in the carbonaceous material and then cooling the material under a pressure of 100 Pa or less or in a rare gas atmosphere.

Abstract: The invention provides a high purity carbonaceous material which is reduced in contents of oxygen, nitrogen and chlorine readily binding to carbon atoms and in contents of elements, phosphorus, sulfur and boron, readily binding to carbon atoms upon heating and which can be used in producing single crystals such as semiconductors, a high purity carbonaceous material for use as a substrate for ceramic layer coating, and a ceramic layer-coated high purity carbonaceous material. The high purity carbonaceous material has oxygen content of 1×1018 atoms/cm3 or less as determined by SIMS. Its chlorine content is preferably 1×1016 atoms/cm3 or less as determined by SIMS, and its nitrogen content is preferably 5×1018 atoms/cm3 or less as determined by SIMS. Its phosphorus, sulfur and boron contents are preferably not higher than respective specified values. Such a high purity carbonaceous material is coated with ceramic layer.

Abstract: The present invention relates to a low nitrogen concentration carbonaceous material with a nitrogen concentration according to glow discharge mass spectrometry of 100 ppm or less, as well as a manufacturing method thereof are provided. A carbonaceous material subjected to a high purification treatment in a halogen gas atmosphere is heat treated under a pressure of 100 Pa or less and at a temperature of 1800° C. or higher, releasing nitrogen in the carbonaceous material and then cooling the material under a pressure of 100 Pa or less or in a rare gas atmosphere.

Abstract: A product information brokerage system for mediating between a plurality of users and a plurality of manufacturers via an electronic network, the system including a user information storage unit for storing user attribute information and user-owned product information, a product information storage unit for storing product information, a product information providing unit for providing users with information related to the products owned by users based on the product information, and a user information providing unit for providing user information to manufacturers of the products owned by users based on the user attribute information and user-owned product information.

Abstract: A system for mediating between at least one user and at least one manufacturer via a network is disclosed. The system includes a storage part in which purchase information related to products possessed by the at least one user is stored and an insurance request part capable of requesting insurance on the products according to the purchase information stored in the storage part.

Abstract: The EDM apparatus for machining a workpiece by electric discharge while supplying dielectric fluid which contains powder to the work gap formed by a tool electrode and the workpiece to be machined includes a cover to protect them against the adherence of the powder that is contained in the dielectric fluid, a fluid feeding device supplying the powder-containing fluid to the work gap during the electric discharge machine process, and, at the same time, also supplying fluid that does not contain any powder to the parts inside the cover.

Abstract: An electronic traffic tariff reception system can identify a vehicle traveling freely on a road having a plurality of lanes clearly and impose a predetermined debit value on the vehicle in the non-stop manner and in the cashless manner. Further, the system can photograph an image of an illegally passing vehicle. A vehicle identification apparatus can identify the vehicles traveling freely on the road having the plurality of lanes separately in a control point of the reception system. An in-vehicle unit equipped with a smart card is mounted in a vehicle. An antenna for debiting process capable of performing radio communication with the in-vehicle unit is provided. Also provided are an antenna controller for causing the antenna for the debiting process to receive personal information and vehicle information, a local controller for judging whether the information is normal or not or whether the vehicle is to be debited or not, and an apparatus for photographing an illegally passing vehicle.

Abstract: The object of the present invention is to accurately detect vehicles even under special conditions where vehicles go side by side, a motorcycle passes another vehicle in a traffic jam, or a shadow is cast on the road surface. The vehicle detecting system comprises a one dimension CCD camera 2 mounted above a road surface so as to provide one dimension light amount signal in the lane width direction from above the road surface and intermittent markings 6 disposed in the field of view of the one dimension CCD camera. When a vehicle 3 enters the field of view of the one dimension CCD camera 2, the modulation of one dimension light amount signal is disturbed. Therefore, a signal processing device 5 detects the vehicle on the basis of the output signal of the one dimension CCD camera 2 by checking the disturbance of modulation.

Abstract: A triple-layer electrode structure or a multilayer interconnecting structure of a semiconductor device comprising a contact (a lower conductive) layer of aluminum or its alloy which comes into contact with a silicon substrate, a barrier layer of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g., tungsten), and a (upper) conductive layer of aluminum or its alloy. The TiN-W barrier layer prevents overdissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature. The barrier layer is formed by sintering a mixture of refractory metal nitride powder and refractory metal powder to form a target which is sputter deposited on the contact layer in an atomsphere excluding gaseous nitrogen.