Abstract: A storage apparatus is provided that comprises a display case part with an inside thereof being dividable into a plurality of zones, a supply duct that is connected to supply openings for supplying conditioning air for controlling environmental conditions to the plurality of zones respectively, and an exhaust duct that is connected to exhaust openings for taking in air from the plurality of zones. In this storage apparatus, conditioning air such as cold air or hot air is circulated in the respective zones, and the environmental conditions can be adjusted efficiently in zone basis. Therefore, in a storage apparatus equipped with an open-type display case part, it is possible to dispense with an air curtain covering the entire open side, so that a storage apparatus with a high storage capacity is provided.

Abstract: A storage apparatus is provided that comprises a display case part with an inside thereof being dividable into a plurality of zones, a supply duct that is connected to supply openings for supplying conditioning air for controlling environmental conditions to the plurality of zones respectively, and an exhaust duct that is connected to exhaust openings for taking in air from the plurality of zones. In this storage apparatus, conditioning air such as cold air or hot air is circulated in the respective zones, and the environmental conditions can be adjusted efficiently in zone basis. Therefore, in a storage apparatus equipped with an open-type display case part, it is possible to dispense with an air curtain covering the entire open side, so that a storage apparatus with a high storage capacity is provided.

Abstract: There is provided a method of producing a bonded wafer comprising bonding a bond wafer and a base wafer via an oxide film or directly and then reducing thickness of the bond wafer, characterized in that the base wafer is a wafer produced by processes comprising slicing a silicon single crystal ingot, and then subjected at least to chamfering, lapping, etching, mirror polishing and cleaning, and the etching process is conducted by subjecting the wafer to alkali etching, and then acid etching, and an etching amount in the alkali etching is larger than an etching amount in the acid etching, and a chamfered part of the base wafer is subjected to a mirror finishing process after the etching, and a bonded wafer produced by the method.

Abstract: There is provided a method of producing a bonded wafer comprising bonding a bond wafer and a base wafer via an oxide film or directly and then reducing thickness of the bond wafer, characterized in that the base wafer is a wafer produced by processes comprising slicing a silicon single crystal ingot, and then subjected at least to chamfering, lapping, etching, mirror polishing and cleaning, and the etching process is conducted by subjecting the wafer to alkali etching, and then acid etching, and an etching amount in the alkali etching is larger than an etching amount in the acid etching, and a chamfered part of the base wafer is subjected to a mirror finishing process after the etching, and a bonded wafer produced by the method.

Abstract: According to the present invention, there are provided an SO wafer wherein surface roughness of an SOI layer surface of the SOI wafer is 0.12 nm or less in terms of RMS value and/or interface roughness of an interface between the SOT layer and a buried oxide layer of the SOI wafer is 0.12 nm or less in terms of RMS value, and a method for producing an SOI wafer, which comprises mirror-polishing an SOI wafer, removing a native oxide film on a surface of the wafer or forming a thermal oxide film having a thickness of 300 nm or more on the surface and removing the thermal oxide film, and subjecting the wafer to a heat treatment in an atmosphere of 100% hydrogen or a mixed gas atmosphere of argon and/or nitrogen containing 10% or more of hydrogen by using a rapid heating and rapid cooling apparatus.