Abstract: A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

Abstract: A pellicle intermediary body has a Si substrate, a Si oxide film formed on a surface of the Si substrate, and a Si layer formed on a surface of the Si oxide film. The Si layer includes a low COP (Crystal Originated Particle) portion which is a part where the number of COPs decreases as it approaches the surface of the Si layer and is formed in the part that constitutes the surface of the Si layer. A pellicle intermediary body, a pellicle, a method for manufacturing a pellicle intermediary body, and a pellicle manufacturing method that can improve the quality of the pellicle film are provided.

Abstract: A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

Abstract: A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.

Abstract: A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.

Abstract: A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.

Abstract: A compound semiconductor substrate, a pellicle film, and a method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film are provided. A method for manufacturing a compound semiconductor substrate comprises: a step of forming a SiC film on obverse side of a Si substrate, and a step of exposing at least part of the reverse side of the SiC film by wet etching. In the step of exposing at least part of the reverse side of the SiC film, at least the Si substrate and the SiC film are moved with respect to liquid chemical used for the wet etching.

Abstract: A method for manufacturing a substrate with less warpage includes a step of forming SiC film 121 on a surface of Si substrate 11, a step of removing bottom surface RG2 which is at least a part of the Si substrate 11 contacting with the SiC film 121, and a step of forming another SiC film on a surface of SiC film 121 after the step of removing the bottom surface RG2.

Abstract: A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.

Abstract: A method for manufacturing a substrate with less warpage includes a step of forming SiC film 121 on a surface of Si substrate 11, a step of removing bottom surface RG2 which is at least a part of the Si substrate 11 contacting with the SiC film 121, and a step of forming another SiC film on a surface of SiC film 121 after the step of removing the bottom surface RG2.

Abstract: A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C.

Abstract: A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.

Abstract: An apparatus for producing a polyacetylene film by contacting acetylene gas with Ziegler-Natta catalyst to polymerize the acetylene gas in a vessel which comprises a catalyst introduction conduit to be introduced with the Ziegler-Natta catalyst provided at a cap provided at the top of the vessel and having an end opening disposed in the vicinity of the inner surface of the side wall of the vessel in such a manner that the conduit and the vessel are relatively moved in rotation, and a rotary transmission mechanism for driving to rotatably coat the catalyst flowed out from the end opening of the conduit on the inner surface of the bottom from the inner surface of the side wall of the vessel. Thus, the polyacetylene film can be produced in a uniform thickness and in a relatively large area by introducing the Ziegler-Natta catalyst of the suitable quantity, and the catalyst can be spread over the entire surface rapidly by the relative rotation between the conduit and the vessel.

Abstract: An apparatus for producing a polyacetylene film by contacting acetylene gas with Ziegler-Natta catalyst to polymerize the acetylene gas in a vessel which comprises a catalyst introduction conduit to be introduced with the Ziegler-Natta catalyst provided at a cap provided at the top of the vessel and having an end opening disposed in the vicinity of the inner surface of the side wall of the vessel in such a manner that the conduit and the vessel are relatively moved in rotation, and a rotary transmission mechanism for driving to rotatably coat the catalyst flowed out from the end opening of the conduit on the inner surface of the bottom from the inner surface of the side wall of the vessel. Thus, the polyacetylene film can be produced in a uniform thickness and in a relatively large area by introducing the Ziegler-Natta catalyst of the suitable quantity, and the catalyst can be spread over the entire surface rapidly by the relative rotation between the conduit and the vessel.

Abstract: An apparatus for producing a polyacetylene film by polymerizing acetylene gas in contact with Ziegler-Natta catalyst comprising in a vessel to be introduced with acetylene gas a rotatably driven film forming drum, a coating member for coating the Ziegler-Natta catalyst on the outer peripheral surface of the drum, a feeding roller driven reversely to the drum in rolling contact with the drum for drawing a polyacetylene film polymerized with the catalyst on the drum, a cleaning member for cleaning the drawn polyacetylene film, and a winding unit for winding the polyacetylene film. Thus, the polyacetylene film can be produced in high quality in a mass production.

Abstract: An apparatus for producing a polyacetylene film by polymerizing acetylene gas in contact with Ziegler-Natta catalyst comprising: in a vessel to be introduced with acetylene gas a film producing container for storing Ziegler-Natta catalyst, a pair of feed rollers provided adjacently to draw out the polyacetylene film polymerized on the surface of the catalyst and reversely driven in roll contact with each other, a cleaning member for cleaning the drawn polyacetylene film, and a winding unit for winding the polyacetylene film. Thus, the polyacetylene film can be continuously produced with good productivity, and since the speed for drawing the polyacetylene film is varied to regulate the thickness of the film, the films of various size can be readily fabricated in mass production, thereby reducing the cost of the polyacetylene film.