Abstract: Objective lens alignment of a scanning electron microscope review tool with fewer image acquisitions can be obtained using the disclosed techniques and systems. Two different X-Y voltage pairs for the scanning electron microscope can be determined based on images. A second image based on the first X-Y voltage pair can be used to determine a second X-Y voltage pair. The X-Y voltage pairs can be applied at the Q4 lens or other optical components of the scanning electron microscope.

Abstract: Objective lens alignment of a scanning electron microscope review tool with fewer image acquisitions can be obtained using the disclosed techniques and systems. Two different X-Y voltage pairs for the scanning electron microscope can be determined based on images. A second image based on the first X-Y voltage pair can be used to determine a second X-Y voltage pair. The X-Y voltage pairs can be applied at the Q4 lens or other optical components of the scanning electron microscope.

Abstract: One embodiment relates to a tilt-imaging scanning electron microscope apparatus. The apparatus includes an electron gun, first and second deflectors, an objective electron lens, and a secondary electron detector. The first deflector deflects the electron beam away from the optical axis, and the second deflector deflects the electron beam back towards the optical axis. The objective lens focuses the electron beam onto a spot on a surface of a target substrate, wherein the electron beam lands on the surface at a tilt angle. Another embodiment relates to a method of imaging a surface of a target substrate using an electron beam with a trajectory tilted relative to a substrate surface. Other embodiments and features are also disclosed.

Abstract: A method for fabricating a micro-field emission gun including the steps of providing an insulator slab, formed with a penetrating hole acting as a passage of an electron beam, upon a gate electrode of the micro-field emission gun, such that the penetrating hole is aligned with an emitter of the micro-field emission gun, bonding an insulator slab upon the gate electrode by means of an anodic bonding process, and providing an acceleration electrode on the insulator slab such that the acceleration electrode covers a surface of said insulator slab facing away from said gate electrode, except for a passage of the electron beam.

Abstract: To miniaturize a secondary-electron detector, a ring-shaped secondary-electron emissive material layer 44A is formed on a ring-shaped base 41 having a round hole 41a, via a ring-shaped insulating layer 42A and a ring-shaped high resistance layer 43A. Similarly, a ring-shaped secondary-electron emissive material layer 44B is formed on a ring-shaped base 33 having a round hole 33a, via a ring-shaped insulating layer 42B and a ring-shaped high resistance layer 43B. A arc-shaped multiplied-electron collecting electrode 461 is joined between the insulating layers 42A and 42B outside the secondary-electron emissive material layer 44B. A porous secondary-electron multiplication substance may be filled between opposed bases instead of the secondary-electron emissive material layers 44A and 44B, and an optical fiber coated with phosphor may be used instead of the electrode 461.

Abstract: A method for fabricating a micro-field emission gun including the steps of providing an insulator slab, formed with a penetrating hole acting as a passage of an electron beam, upon a gate electrode of the micro-field emission gun, such that the penetrating hole is aligned with an emitter of the micro-field gun, bonding an insulator slab upon the gate electrode by means of an anodic bonding process, and providing an acceleration electrode on the insulator slab such that the acceleration electrode covers a surface of said insulator slab facing away from said gate electrode, except for a passage of the electron beam.

Abstract: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector.

Abstract: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspecting sample, such as masks, wafers or so forth by irradiating electron beams onto the inspection sample and detecting a secondary electron or a backscattered electron reflected from the surface of the inspecting sample or a transmission electron passing through the inspection sample. The pattern inspection apparatus includes an electron beam generating means including at least one electron gun for generating at least one electron beam irradiating on the surface of the inspecting sample, a movable means for supporting the inspecting sample, a detecting means including a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processing means for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detecting means.

Abstract: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector.

Abstract: A method for projecting a photelectron image includes providing a mask substrate, and selectively contacting a layer which lowers the work function of the mask substrate thereto. Photoelectrons are emitted from the contacted portion.

Abstract: An X-ray lithography system, in which an X-ray beam is separated from synchrotron radiation beams and reflected by a scanning mirror which vertically scans the reflected X-ray beam. The X-ray is irradiated into an exposure chamber via a beryllium window, which is vertically oscillated in such a manner that the beryllium window is shifted up and down in synchronization with the scanning operation of the X-ray beam.