Patents by Inventor Ichiro Ito

Ichiro Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of etching metallic thin film on thin film resistor
    Patent number: 7223668
    Abstract: An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: May 29, 2007
    Assignee: DENSO COrporation
    Inventors: Ichiro Ito, Satoshi Shiraki
  • Method of etching metallic thin film on thin film resistor
    Publication number: 20050042882
    Abstract: An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.
    Type: Application
    Filed: September 17, 2004
    Publication date: February 24, 2005
    Inventors: Ichiro Ito, Satoshi Shiraki
  • Method of etching metallic thin film on thin film resistor
    Patent number: 6809034
    Abstract: An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.
    Type: Grant
    Filed: April 24, 2002
    Date of Patent: October 26, 2004
    Assignee: Denso Corporation
    Inventors: Ichiro Ito, Satoshi Shiraki, Tomio Yamamoto, Makoto Ohkawa, Atsumi Takahashi, Yasuaki Tsuzuki, Akito Fukui, Toshio Sakakibara, Takayuki Sugisaka
  • Method of etching metallic thin film on thin film resistor
    Patent number: 6770564
    Abstract: An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.
    Type: Grant
    Filed: July 28, 1999
    Date of Patent: August 3, 2004
    Assignee: Denso Corporation
    Inventors: Ichiro Ito, Satoshi Shiraki, Tomio Yamamoto, Makoto Ohkawa, Atsumi Takahashi, Yasuaki Tsuzuki, Akito Fukui, Toshio Sakakibara, Takayuki Sugisaka
  • Method of etching metallic thin film on thin film resistor
    Publication number: 20020115299
    Abstract: An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.
    Type: Application
    Filed: April 24, 2002
    Publication date: August 22, 2002
    Inventors: Ichiro Ito, Satoshi Shiraki, Tomio Yamamoto, Makoto Ohkawa, Atsumi Takahashi, Yasuaki Tsuzuki, Akito Fukui, Toshio Sakakibara, Takayuki Sugisaka
  • Magnetoresistive element and manufacturing method therefor
    Patent number: 5471084
    Abstract: This invention relates to a magnetoresistive element used for a magnetic sensor, etc. A ferromagnetic magnetoresistive element thin film is formed so as to be electrically connected to and so as to overlap the upper end portion of an aluminum wiring metal on a substrate. Through using a vacuum heat treatment with a temperature between 350.degree. and 450.degree. C., a Ni--Al-based alloy is formed at the overlapping portion. Therefore, even when a surface protection film of silicon nitride is subsequently formed by plasma CVD on the substrate, the alloy prevents the nitriding of the upper end portion of the aluminum wiring metal. Accordingly, the surface can be protected from moisture by the silicon nitride film without increasing the contact resistance between the magnetoresistive element thin film and the wiring metal. Instead of the Ni--Al-based alloy, other conductive metals such as TiW, TiN, Ti, Zr, or the like may be used.
    Type: Grant
    Filed: July 30, 1993
    Date of Patent: November 28, 1995
    Assignee: Nippondenso Co., Ltd.
    Inventors: Yasutoshi Suzuki, Kenichi Ao, Hirofumi Uenoyama, Hiroki Noguchi, Koji Eguchi, Ichiro Ito, Yoshimi Yoshino