Patents by Inventor Ichiro Izawa

Ichiro Izawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7112959
    Abstract: The comparator circuit includes an amplifier amplifying a voltage signal inputted from outside, a voltage dividing circuit dividing down a power supply voltage supplied from outside, thereby producing a reference voltage, a waveform dull circuit dulling the reference voltage, and a comparator comparing a voltage of the input voltage signal amplified by the amplifier with the reference voltage dulled by the waveform dull circuit.
    Type: Grant
    Filed: August 30, 2005
    Date of Patent: September 26, 2006
    Assignee: Denso Corporation
    Inventors: Ichiro Izawa, Hiroshi Okada
  • Publication number: 20060043966
    Abstract: The comparator circuit includes an amplifier amplifying a voltage signal inputted from outside, a voltage dividing circuit dividing down a power supply voltage supplied from outside, thereby producing a reference voltage, a waveform dull circuit dulling the reference voltage, and a comparator comparing a voltage of the input voltage signal amplified by the amplifier with the reference voltage dulled by the waveform dull circuit.
    Type: Application
    Filed: August 30, 2005
    Publication date: March 2, 2006
    Inventors: Ichiro Izawa, Hiroshi Okada
  • Patent number: 6677177
    Abstract: A solid state image sensor that prevents a reduction of transfer efficiency even if pixel size is reduced. A first semiconductor region is formed on a semiconductor substrate and a second semiconductor region is formed on the first semiconductor region. A plurality of parallel isolation regions are arranged in the second semiconductor region at predetermined intervals. Depth of the isolation regions is less than the thickness of the second semiconductor region such that the potential of transfer regions in the second semiconductor region is affected by a potential barrier formed in first semiconductor region rather than a potential barrier formed around the isolation regions when the intervals between the isolation regions are relatively narrow.
    Type: Grant
    Filed: November 24, 2000
    Date of Patent: January 13, 2004
    Assignee: Sanyo Electric Co., Ltd.
    Inventor: Shin′ichiro Izawa
  • Patent number: 6020736
    Abstract: A rotation object is made of a magnetic material and disposed within a predetermined range of an angle of rotation on a plane perpendicular to an axis of rotation. A bias magnet generates a bias magnetic field to the rotation body in a direction perpendicular to the axis of rotation. Magnetic resistance elements are disposed in the bias magnetic field on a plane including the axis of rotation at a position deviated from the position of the rotation object in the axial direction of the rotation body and inclined by about 45.degree. relative to a direction perpendicular to the axis of rotation.
    Type: Grant
    Filed: August 7, 1995
    Date of Patent: February 1, 2000
    Assignee: Nippondenso Co., Ltd.
    Inventors: Seiki Aoyama, Yasuaki Makino, Susumu Kuroyanagi, Izuru Shoji, Ichiro Izawa
  • Patent number: 5729127
    Abstract: In a magnetism detecting apparatus, a magnetoresistance element is positioned adjacent to a gear with teeth to be responsive to magnetic field applied thereto. The gear is shaped such that each of the teeth satisfies SA/(SA+SB)<0.125, where SA denotes a cross-sectional area of a tip portion of each of the teeth, which tip portion is measured through 10% of a height of each of the teeth taken from a tip of each of the teeth, and SB denotes a cross-sectional area of a notch portion of each notch between the teeth, which notch portion has a height corresponding to the height of the teeth. As a result of this configuration, distortion contained in an output signal based upon high and low threshhold values from the magnetoresistance element can be eliminated. In addition, variations in intervals of a pulse signal obtained by performing a waveform shaping operation can be reduced, even when a distance between the gear teeth and the magnetoresistance element is varied.
    Type: Grant
    Filed: September 12, 1995
    Date of Patent: March 17, 1998
    Assignee: Nippondenso Co., Ltd.
    Inventors: Tatsuo Tamura, Kenji Yagi, Yasuaki Makino, Ichiro Izawa
  • Patent number: 5637995
    Abstract: A magnetic detection device including a biasing magnet for generating a bias magnetic field directed to an object of detection having a magnetic material; a magnetoresistance effective element disposed at an inclination of about 45.degree. to the direction of the bias magnetic field to provide a change in resistance caused by the bias magnetic field in accordance with movement of the object of detection, so as to detect a change in state of the bias magnetic field via the change in resistance of the magnetoresistance effective element; and the biasing magnet having a hollow portion containing a holder for holding the magnetoresistance effective element in a position between a surface of the biasing magnet and the object of detection and close to the surface of the biasing element.
    Type: Grant
    Filed: March 21, 1995
    Date of Patent: June 10, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Ichiro Izawa, Yasuaki Makino, Susumu Kuroyanagi, Seiki Aoyama, Shigehiro Kasumi, Kenji Yagi, Kazuo Kajimoto, Masaki Takashima, Shinichi Konda
  • Patent number: 5005064
    Abstract: According to this invention, a device for detecting magnetism comprises; a substrate, an interposed insulating layer containing impurities therein, formed on the substrate, and a ferromagnetic magnetoresistive element formed on the interposed layer, wherein at least a portion of the interposed layer on which the ferromagnetic magnetoresistive element is formed has a concentration of impurities of less than a predetermined value. Further, in the device of this invention, the surface of the layer interposed between the substrate and the ferromagnetic magnetoresistive element has a surface roughness of less than 120 and an angle between a contacting surface of a conductive wiring and the ferromagnetic magnetoresistive element and the surface of the interposed layer is less than 78 degrees.
    Type: Grant
    Filed: August 18, 1988
    Date of Patent: April 2, 1991
    Assignee: Nippondenso Co., Ltd.
    Inventors: Yoshimi Yoshino, Kenichi Ao, Ichiro Izawa, Toshikazu Arasuna
  • Patent number: 4835509
    Abstract: A potentiometer includes a magnetoresistive element made of ferromagnetic material. A device applies a magnetic field to the magnetoresistive element. An absolute value of the magnetic field applied to the magnetoresistive element is equal to or greater than a saturation magnetic field with respect to the ferromagnetic magnetoresistive element. The magnetic field applying device is movable relative to the magnetoresistive element.
    Type: Grant
    Filed: July 23, 1987
    Date of Patent: May 30, 1989
    Assignee: Nippondenso Co., Ltd.
    Inventors: Yoshimi Yoshino, Toshikazu Arasuna, Kenichi Ao, Katsuhiko Ariga, Toshikazu Matsushita, Ichiro Izawa