Abstract: An acid solution is continuously supplied to a central portion of a surface of a substrate while the substrate is rotating, and an oxidizing agent solution is continuously or intermittently supplied to a periphery of the substrate. In addition, an oxidizing agent solution and an acid solution are simultaneously or alternately supplied to a reverse side of the substrate.

Abstract: There is provided a method and apparatus for etching a ruthenium film which can sufficiently etch away a ruthenium film formed on or adhering to the peripheral region, especially the no device formed region, backside or other portions of a substrate. The method comprises etching a ruthenium film formed on a substrate with a chemical liquid having a pH of not less than 12 or and an oxidation-reduction potential of not less than 300 mVvsSHE.

Abstract: The present invention relates to a revolution member supporting apparatus for holding and rotating a disc-shaped object (object to be rotated) such as a semiconductor wafer. A revolution member supporting apparatus, comprising: a rotatable member which rotates about an axis of rotation; and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates; wherein the holding members are allowed to swing about their own central axes.

Abstract: The first trench is formed in the region of the semiconductor substrate, in which an element isolation region is to be formed, and the first buried member, which is insulative, is buried in the first trench. Then, the second trench, having a width smaller than that of the first trench, is made in the first buried member, and the portion of the semiconductor substrate which is located at the bottom portion of the first trench, and the insulating second buried member is buried in the second trench, thereby forming the element isolation region.

Abstract: A method of manufacturing a semiconductor device comprises the steps of introducing a first gas containing steam or alcohol into a processing vessel housing a semiconductor substrate, and introducing a hydrogen fluoride gas as a second gas into the processing vessel after stopping introduction of the first gas into the process chamber.

Abstract: A heat treatment apparatus for semiconductor wafers includes a reaction chamber, a heater, a heat-insulating member, a first cooling gas path, a second cooling gas path, a blower and a controller. The reaction chamber houses semiconductor wafers. The heater is provided outside the reaction chamber to heat it. The heat-insulating member is provided outside the heater to keep the temperature of the reaction chamber. The first cooling gas path is interposed between the reaction chamber and heater, while the second cooling gas path is disposed between the heater and heat-insulating member. The blower allows gas to flow through the first and second gas paths to cool the reaction chamber. The controller controls the heater to increase the temperature of the reaction chamber and does the blower to decrease the temperature thereof.

Abstract: A polishing method and apparatus are provided for detecting the polishing end point of a semi-conductor wafer having a polishing film and a stopper film formed thereon. First driving means are provided having a first drive shaft for rotating a polishing plate and a polishing cloth thereon. Second driving means having a second rotatable drive shaft are also provided. Mounting means for mounting the semi-conductor wafer is adapted to be rotated by the second driving means for polishing the wafer. Energy supplying means for supplying prescribed energy to the semi-conductor wafer are also included. Finally, detecting means for detecting a polishing end point of the polishing film is included and detects a variation of the energy supplied to the semi-conductor wafer. Different types of energy can be utilized such as infrared light and a vibration wave.

Abstract: A plurality of cells are provided in a concave portion of a top plate. A cloth to which water is penetrated is provided in a back face of each cell, and a wafer is attracted by the cloth. First and second pipes are connected to each cell. The first pipe introduces liquid to the cell, and the second pipe discharges liquid from the cell, and guides liquid to the first pipe. A constant-temperature device is provided to each first pipe, and a temperature of liquid of each cell is adjusted by the constant-temperature device in accordance with a temperature distribution of the wafer. Whereby, a polishing rate of each part of the wafer can be equalized.