Abstract: A CAE analysis die model is produced such that a cavity of a die for obtaining a cast product is divided into multiple elements. Fluidity analysis and solidification analysis are performed under a predetermined casting condition by means of the die model to calculate, for each element, a factor regarding growth of a solidification structure, a factor regarding purity of molten metal, and a factor regarding a hole defect. Mechanical characteristics of each portion of the cast product are obtained by a regression expression obtained by multiple regression analysis using mechanical characteristics of the cast product as an objective variable and using each factor as an explanatory variable.

Abstract: A CAE analysis die model is produced such that a cavity of a die for obtaining a cast product is divided into multiple elements. Fluidity analysis and solidification analysis are performed under a predetermined casting condition by means of the die model to calculate, for each element, a factor regarding growth of a solidification structure, a factor regarding purity of molten metal, and a factor regarding a hole defect. Mechanical characteristics of each portion of the cast product are obtained by a regression expression obtained by multiple regression analysis using mechanical characteristics of the cast product as an objective variable and using each factor as an explanatory variable.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of wiring lines which are provided on one side of the semiconductor substrate and which have connection pad portions, and a plurality of columnar electrodes respectively provided on the connection pad portions of the wiring lines, each of the columnar electrodes including an outer peripheral surface and a top surface. An electromigration prevention film is provided on at least the surfaces of the wiring lines. A sealing film is provided around the outer periphery surfaces of the columnar electrodes.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of wiring lines which are provided on one side of the semiconductor substrate and which have connection pad portions, and a plurality of columnar electrodes respectively provided on the connection pad portions of the wiring lines, each of the columnar electrodes including an outer peripheral surface and a top surface. An electromigration prevention film is provided on at least the surfaces of the wiring lines. A sealing film is provided around the outer periphery surfaces of the columnar electrodes.

Abstract: A semiconductor device has a semiconductor substrate having a plurality of connection pads on an upper surface thereof, a protective film made of a resin which is provided on the semiconductor substrate, and has openings at those portions to which the respective connection pads correspond, an altered layer having a mesh-like structure formed on an upper surface of the protective film, and a metallic layer provided on upper surfaces of the connection pads and an upper surfaces of the altered layer.

Abstract: An expansion unit (peripheral device) includes a detection circuit for detecting establishment of communication between a PC card of a notebook-type personal computer and a communication board of the expansion unit, and a power supply control circuit for powering on the expansion unit in accordance with the detection of the establishment of communication by the detection circuit. The notebook-type personal computer starts up the OS as a result of being powered ON, performs recognition of the PC card in a card slot, supplies power to the PC card and, after a fixed wait time, performs recognition of a PCI board of the expansion unit via the PC card, the serial cable (communication line) and the communication board.

Abstract: A semiconductor device includes a semiconductor structure including a semiconductor substrate having an integrated circuit portion, and a plurality of connecting pads connected to the integrated circuit portion. A plurality of distributing lines are formed on the semiconductor structure, connected to the connecting pads, and have connecting pad portions. An encapsulating layer made of a resin is formed on the semiconductor structure and upper surface of the distributing lines. A copper oxide layer is formed on at least a surface of each of the distributing lines except for the connecting pad portion.

Abstract: A semiconductor device includes a semiconductor structure including a semiconductor substrate having an integrated circuit portion, and a plurality of connecting pads connected to the integrated circuit portion. A plurality of distributing lines are formed on the semiconductor structure, connected to the connecting pads, and have connecting pad portions. An encapsulating layer made of a resin is formed on the semiconductor structure and upper surface of the distributing lines. A copper oxide layer is formed on at least a surface of each of the distributing lines except for the connecting pad portion.