Abstract: A control method for an exposure apparatus, in which an exposure amount and a focus value are set in transferring a circuit pattern on a mask onto a resist formed on a wafer by the exposure apparatus, includes the steps of arranging, on the mask, an exposure amount monitor mark and a focus monitor mark used to separately monitor the effective exposure amount and the focus value on the wafer, transferring the exposure amount monitor mark and the focus monitor mark onto the resist to form an exposure amount monitor pattern and a focus monitor pattern, measuring the states of the exposure amount monitor pattern and the focus monitor pattern at least at one of timings after exposure, after post exposure baking, during a cooling process after baking, during a process after cooling, during development, and after development, on the basis of the measurement results, calculating the difference between an optimum exposure amount value and an exposure amount set value set in the exposure apparatus and the difference be

Abstract: A method of manufacturing a semiconductor device, light is applied through the cell patterns made in master masks, thereby transferring the cell patterns to, and forming the cell patterns on, a wafer. On the basis of layout data representing a layout diagram of the semiconductor device, the pattern data of the device is divided along the boundaries of the function blocks of the device, generating pattern data items. Master masks are prepared in accordance with the pattern data items. Light is applied to the wafer, first through the master mask and then through the master mask. The cell patterns made in the master masks are transferred to the wafer.

Abstract: A voice-input document creation system which reduces correction times to a wrongly-recognized input to ensure input efficiency. The system has a determination means for comparing the feature content of a newest voice input extracted by a feature extracting module with a feature content of an immediately preceding voice input to determine if the newest voice input is a correction to the immediately preceding voice input. When a first-time correction is received, the system displays a list of all output candidates for the immediately preceding voice input stored in a second memory. When a second-time correction is received, the system stores the output candidates for the newest voice input into a third memory and, at the same time, displays the output candidates; at this time, the system neither displays nor stores in the third memory those output candidates displayed upon the first-time correction.

Abstract: An exposure monitor mask used with an exposure system for manufacturing ICs includes an exposure detecting pattern having at least three patterns arranged in one direction, the exposure detecting pattern including a pair of relative position detecting patterns with at least one variable intensity pattern that allows the intensity of light transmitted therethrough to vary monotonously in the one direction disposed between the pair of relative position detecting patterns.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: Disclosed are plants, plant tissue and plant seed, whose growth and development are tolerant of, or resistant to various imidazole and triazole herbicidal compounds, at levels which normally are inhibitory to the plants. The tolerance or resistance is conferred by an altered imidazoleglycerol phosphate dehydratase (IGPD). Plant genes encoding wild-type and altered IGPD, purified plant IGPD, methods of isolating IGPD from plants, and methods of using both purified IGPD and IGPD-encoding genes are also disclosed.

Abstract: In a charged beam drawing apparatus for drawing a desired pattern on a sample by deflecting a charged beam on the sample while continuously moving a stage on which the sample is placed, a mark having a line-and-space pattern, in which a plurality of heavy metal marks each having a width equal to a side of the charged beam are arranged with spaces each equal to the width between them, is formed on the sample. The charged beam is radiated onto the mark while the position of the beam is fixed, and at the same time the stage is continuously moved in the longitudinal direction of the mark, thereby detecting a reflected beam from the mark. On the basis of the signal of the detected reflected beam, a relative vibration during the continuous movement of the stage is measured. This makes it possible to measure the relative vibration produced by the continuous movement of the stage, resulting in an increase in drawing accuracy.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: A method of transferring a micropattern onto a substrate includes the step of forming a multilayer film consisting of at least two layers on the substrate, the first exposing step of exposing the uppermost layer of the multilayer film through a first mask having a pattern equal to or larger than the micropattern, the step of positioning a second mask such that a main pattern thereof overlaps a transfer area of the uppermost layer of the multilayer film, the second mask having the main pattern corresponding to the micropattern and an auxiliary pattern arranged in the vicinity of the main pattern, and the second exposing step of exposing a layer other than the uppermost layer of the multilayer film through the second mask.

Abstract: A triazole of the formula I ##STR1## in which the meanings of the radicals are described in claim 1, have a herbicidal and plant-growth regulating action. They are suitable as active substances in weed killers and in compositions for positively influencing the growth of crop plants.

Abstract: An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.

Abstract: A fixed-slit type photoelectric microscope comprises an irradiation system for irradiating a linear pattern with light beam, an objective for forming an image of the linear pattern, a single slit disposed at a point conjugate to the linear pattern with respect to the objective, a photoelectric conversion element for converting the light beam from the slit into an electrical signal, a rectifying circuit for rectifying an electrical signal from the photoelectric conversion element, and an indicator for visualizing the rectified signal. The irradiation system generates a pair of polarized light beams with planes of polarization orthogonal to each other and alternately illuminates the linear pattern with the pair of polarized light beams at fixed periods. For deflecting the pair of polarized light beams from the linear pattern in different directions, an optical deflecting element is provided between the linear pattern and the slit.

Abstract: An electrostatic chuck plate comprises an electrode plate made of electrically conductive material and a dielectric layer formed on one surface of the electrode plate by flame-spraying dielectric material. The surface region of the dielectric layer is impregnated with plastic material, and the surface of the dielectric layer is smooth and flat. A sample is electrostatically attracted toward the electrode plate and is thus held on the smooth and flat surface of the dielectric layer.

Abstract: According to the invention an electron beam pattern transfer device with an improved alignment means is provided.A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.

Abstract: An electron-beam image transfer device includes an evacuated vessel having a main chamber and spare chamber extended therefrom and a specimen holder and mask holder disposed in the main chamber. A subchamber is formed near the spare chamber to house a specimen. The specimen in the subchamber is transferred to the spare chamber by a movable support through an opening which is always kept in an airtight state, and then brought to the specimen holder by a transferring mechanism.

Abstract: An electron beam type pattern transfer apparatus has a photoelectric mask and a sample in a vacuum container made of non-magnetic material. The photoelectric mask is adapted to receive an ultraviolet ray from a light source and emit photoelectrons corresponding to a predetermined transfer pattern and the sample is disposed in parallel with the photoelectric mask with a predetermined distance left therebetween and illuminated with the photoelectrons to form a resist image thereon which corresponds to the transfer pattern. A power source for applying a voltage for accelerating the photoelectrons emitted is connected between the photoelectric mask and the sample. A pair of focusing magnets are disposed around the axis of the vacuum container such that they are located one at one outer side and one in an opposite outer side of the vacuum container to permit a vertical magnetic field to be created between the photoelectric mask and the sample.

Abstract: A system comprising a heat generating load, a power control element for controlling power supply to the heat generating load, a temperature detecting circuit for producing an ON signal when the temperature of the load detected by a temperature sensor is lower than a set temperature and an OFF signal when the temperature has reached the set temperature, and a control circuit for feeding on ON or OFF signal to the power control element in response to the signal from the temperature detecting circuit. The control circuit includes a hysteresis control circuit which, once the temperature detecting circuit detects that the temperature has reached the set temperature, permits the power control element to receive OFF signals for a suitable period of time even after the temperature has subsequently lowered to a level at which the signal from the temperature detecting circuit changes to an ON signal.