Abstract: There is provided a liquid crystal device, wherein a liquid crystal layer is interposed between a first substrate and a second substrate, and at least a display pixel corresponding to a colored region of a color from blue to green in a visible light region of which the color varies depending on a wavelength is included, wherein at least one of the first substrate and the second substrate has a spacer which defines the thickness of the liquid crystal layer and an alignment film which is subjected to a rubbing process in a predetermined direction, and wherein a relative positional relationship between the spacer and the display pixel is defined such that a region of the alignment film, which is not subjected to the rubbing process due to existence of the spacer at the time of the rubbing process, is positioned in the display pixel corresponding to the colored region of the color from blue to green.

Abstract: An electro-optical device includes a display panel, and an illumination device having a plurality of light sources emitting light of red, green, blue, and white. The illumination device is configured to illuminate the display panel by transmitting the light emitted from the plurality of light sources through the display panel. The chromaticity of a display screen of the display panel is adjusted to a predetermined chromaticity by changing the time for which each of the plurality of light sources is turned on within a time period of one frame.

Abstract: The invention provides a transflective liquid crystal device and an electronic apparatus using the same which do not cause a non-uniformity in the substrate gap, even though a layer-thickness adjusting layer is formed so that the layer thickness balance of a liquid crystal layer between a transmission display region and a reflection display region is optimized thereby. Below a counter electrode of a counter substrate of a transflective liquid crystal device, a color filter for transmission display, being thin and having a wide chromaticity region, is formed in a transmission display region, and a color filter for reflection display, being thick and having a narrow chromaticity region, is formed in a reflection display region. Further, the interval between a TFT array substrate and the counter substrate is adjusted by a columnar protrusion formed on the TFT array substrate, and a gap material is not dispersed between the TFT array substrate and the counter substrate.

Abstract: There is provided a liquid crystal device, wherein a liquid crystal layer is interposed between a first substrate and a second substrate, and at least a display pixel corresponding to a colored region of a color from blue to green in a visible light region of which the color varies depending on a wavelength is included, wherein at least one of the first substrate and the second substrate has a spacer which defines the thickness of the liquid crystal layer and an alignment film which is subjected to a rubbing process in a predetermined direction, and wherein a relative positional relationship between the spacer and the display pixel is defined such that a region of the alignment film, which is not subjected to the rubbing process due to existence of the spacer at the time of the rubbing process, is positioned in the display pixel corresponding to the colored region of the color from blue to green.

Abstract: An electro-optical device includes a display panel, and an illumination device having a plurality of light sources emitting light of red, green, blue, and white. The illumination device is configured to illuminate the display panel by transmitting the light emitted from the plurality of light sources through the display panel. The chromaticity of a display screen of the display panel is adjusted to a predetermined chromaticity by changing the time for which each of the plurality of light sources is turned on within a time period of one frame.

Abstract: The invention provides a transflective liquid crystal device and an electronic apparatus using the same which do not cause a non-uniformity in the substrate gap, even though a layer-thickness adjusting layer is formed so that the layer thickness balance of a liquid crystal layer between a transmission display region and a reflection display region is optimized thereby. Below a counter electrode of a counter substrate of a transflective liquid crystal device, a color filter for transmission display, being thin and having a wide chromaticity region, is formed in a transmission display region, and a color filter for reflection display, being thick and having a narrow chromaticity region, is formed in a reflection display region. Further, the interval between a TFT array substrate and the counter substrate is adjusted by a columnar protrusion formed on the TFT array substrate, and a gap material is not dispersed between the TFT array substrate and the counter substrate.

Abstract: The invention provides a transflective liquid crystal device and an electronic apparatus using the same which do not cause a non-uniformity in the substrate gap, even though a layer-thickness adjusting layer is formed so that the layer thickness balance of a liquid crystal layer between a transmission display region and a reflection display region is optimized thereby. Below a counter electrode of a counter substrate of a transflective liquid crystal device, a color filter for transmission display, being thin and having a wide chromaticity region, is formed in a transmission display region, and a color filter for reflection display, being thick and having a narrow chromaticity region, is formed in a reflection display region. Further, the interval between a TFT array substrate and the counter substrate is adjusted by a columnar protrusion formed on the TFT array substrate, and a gap material is not dispersed between the TFT array substrate and the counter substrate.

Abstract: To prevent the unevenness of color caused by nonuniformity in the gap between a pair of substrates and to realize a high quality image display in an electro-optical device. An electro-optical device of the present invention comprises a pair of substrates with an electro-optical material interposed therebetween, a sealing material, formed between the pair of substrates and in a sealing region which is disposed around an image display region on one substrate, for bonding the pair of substrates to each other, and first columnar spacers and second columnar spacers which are respectively provided to keep a gap between the pair of substrates in the image display region at a predetermined value. Further, between the pair of substrates, the first columnar spacers are arranged in the image display region and the second columnar spacers are arranged outside the sealing region in a peripheral region which is disposed around the image display region.

Abstract: The invention provides a transflective liquid crystal device and an electronic apparatus using the same to display images with a sufficient quantity of light in their use, even though a color filter for transmission display and a color filter for reflection display are formed in a pixel. On the surface of a counter substrate in a transflective liquid crystal device, a color filter for transmission display, with a wide chromaticity region, is formed in a transmission display region of the lower layer of the counter electrode, and a color filter for reflection display with a narrow chromaticity region is formed in a reflection display region. A boundary portion of the color filters is located inside the reflection display region.

Abstract: This invention provides a semiconductor device that does not cause a defect at an intersection of wirings even when a surge voltage enters from a signal input terminal, an electro-optic device provided with the semiconductor device as a TFT array substrate, and an electronic instrument. In a TFT array substrate of a liquid crystal device, a signal input terminal, and terminals are arranged along a substrate side, and a signal input line extends from the signal input terminal to a substrate side. Of constant potential lines that supply constant potential to an electrostatic protection circuit for the signal input line, a low potential line does not at all intersect the signal input line, and a high potential line, though intersecting the signal input line, does not intersect a wiring portion from the signal input terminal to the electrostatic protection circuit.

Abstract: A method of manufacturing a semiconductor device including: forming a semiconductor film on a substrate; forming an insulating film on the semiconductor film; forming a conductive film on the insulating film; forming a resist film, which has a sidewall, on the conductive film; forming a gate electrode which has a sidewall inside of the sidewall of the resist film by partially removing the conductive film by etching, using the resist film as a mask; forming a gate insulating film which includes an extended part having a sidewall positioned beyond the sidewall of the gate electrode by partially removing the insulating film by etching, using the resist film as a mask; forming high impurity concentration source and drain regions in regions of the semiconductor film spaced apart from the sidewall of said extended part by injecting impurities into the semiconductor film, using the resist film as a mask; removing the resist film; and forming, after removing the resist film, low impurity concentration regions in the

Abstract: The invention provides a transflective liquid crystal display device capable of obtaining a high contrast display in a transmissive display and a reflective display.

Abstract: The invention provides a transflective liquid crystal display device capable of obtaining a high contrast display in a transmissive display and a reflective display.

Abstract: The invention provides a transflective liquid crystal device and an electronic apparatus using the same which do not cause a non-uniformity in the substrate gap, even though a layer-thickness adjusting layer is formed so that the layer thickness balance of a liquid crystal layer between a transmission display region and a reflection display region is optimized thereby. Below a counter electrode of a counter substrate of a transflective liquid crystal device, a color filter for transmission display, being thin and having a wide chromaticity region, is formed in a transmission display region, and a color filter for reflection display, being thick and having a narrow chromaticity region, is formed in a reflection display region. Further, the interval between a TFT array substrate and the counter substrate is adjusted by a columnar protrusion formed on the TFT array substrate, and a gap material is not dispersed between the TFT array substrate and the counter substrate.

Abstract: The invention provides a transflective liquid crystal device and an electronic apparatus using the same to display images with a sufficient quantity of light in their use, even though a color filter for transmission display and a color filter for reflection display are formed in a pixel. On the surface of a counter substrate in a transflective liquid crystal device, a color filter for transmission display, with a wide chromaticity region, is formed in a transmission display region of the lower layer of the counter electrode, and a color filter for reflection display with a narrow chromaticity region is formed in a reflection display region. A boundary portion of the color filters is located inside the reflection display region.

Abstract: A semiconductor device with a high reliability can be gained. The semiconductor device includes a substrate, a semiconductor layer, a gate insulating film and a gate electrode. The semiconductor layer is formed on the main surface of the substrate and includes source and drain regions adjoining each other via a channel region. The gate insulating film is formed on the channel region. The gate electrode is formed on the gate insulating film and has a sidewall. The gate insulating film includes an extended part which has sidewall positioned outside of the sidewall of the gate electrode. The source and the drain regions include high concentration impurity region which is formed in a region of the semiconductor layer apart from the sidewall of the extended part and low concentration impurity region, and which is formed in a region of the semiconductor layer positioned beneath the extended part.

Abstract: To provide a semiconductor device that does not cause a defect at an intersection of wirings even when a surge voltage enters from a signal input terminal, an electro-optic device provided with the semiconductor device as a TFT array substrate, and an electronic instrument. In a TFT array substrate 10 of a liquid crystal device, a signal input terminal 670, and terminals 710, 720 are arranged along a substrate side 111, and a signal input line 67 extends from the signal input terminal 670 to a substrate side 112. Of constant potential lines that supply constant potentials to an electrostatic protection circuit 5 for the signal input line 67, a low potential line 72 does not at all intersect the signal input line 67, and a high potential line 71, though intersecting the signal input line 67, does not intersect a wiring portion 671 from the signal input terminal 670 to the electrostatic protection circuit 5.

Abstract: A semiconductor device with a high reliability can be gained. The semiconductor device includes a substrate, a semiconductor layer, a gate insulating film and a gate electrode. The semiconductor layer is formed on the main surface of the substrate and includes source and drain regions adjoining each other via a channel region. The gate insulating film is formed on the channel region. The gate electrode is formed on the gate insulating film and has a sidewall. The gate insulating film includes an extended part which has sidewall positioned outside of the sidewall of the gate electrode. The source and the drain regions include high concentration impurity region which is formed in a region of the semiconductor layer apart from the sidewall of the extended part and low concentration impurity region, and which is formed in a region of the semiconductor layer positioned beneath the extended part.

Abstract: A semiconductor device and a liquid crystal display stabilizing the threshold voltage of a thin-film field effect transistor while enhancing durability and reliability of a capacitor having as a component a conductive layer formed in the same layer as the channel region of the thin-film field effect transistor. The semiconductor device includes a thin-film field effect transistor and a conductive layer. It includes a substrate, semiconductor layers, conductive layer, and a dielectric film. Semiconductor layers include channel regions of thin-film field effect transistors on the substrate. A conductive layer is formed on substrate in the same layer as semiconductor layers. A dielectric film is formed on conductive layer. The impurity concentration of channel regions is at most 1016 atoms/cm3. The impurity concentration of dielectric film is at most 1017 atoms/cm3.

Abstract: A method of making a semiconductor memory device is discussed, which has a long refresh time and offers high reliability by minimizing junction leakage current, resulting in increased charge retention time. This is achieved by optimizing the diffusion layer junction depth formed in a deeper region of the semiconductor substrate which is in electrical contact with the impurity diffusion layer. Typically, junction depth is in excess of 0.1 .mu.m. Two methods for achieving such a structure are also provided. In one method, implantation voltage in excess of 80 KeV is used to implant P ions to form a high carrier concentration profile at a junction depth of greater than 0.1 .mu.m.