Abstract: In a method of forming a fine pattern, a silicon-oxide-based film is formed directly or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based film is formed such that nitrogen content of the surface thereof assumes a value of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified photoresist layer upon exposure through the mask. Thus, there is prevented generation of a tapered corner in a portion of a resist pattern in the vicinity of a boundary area between the resist pattern and a substrate.

Abstract: A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle ? of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan ??H+H?/2(D+D?) wherein D is a depth of the wiring slot, D? is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H? is the width of the wiring slot.

Abstract: A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle &thgr; of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan &thgr;≧H+H′/2(D+D′) wherein D is a depth of the wiring slot, D′ is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H′ is the width of the wiring slot.

Abstract: There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.

Abstract: A power transmission apparatus for vehicle capable of obtaining a plurality of transmission characteristics by moving spools of variable throttle member 6 according to controlling current flowing to a driving coil 7 by steps, wherein a spool chamber 60 housing a first and second spools 61, 62 therein is communicated with discharge side of a vane pump 3 according to first and second communicating holes 54, 55. And by controlling current flowing to the driving coil 7 by steps, two kinds of magnetic fields, intense and weak are formed in the spool chamber 60. In the case where the first spool 61 moves to the position where it is contacted with the inside end of the spool chamber 60 by the action of the weak magnetic field, it closes an opening end of one communicating hole 54, and in the case where the second spool 62 moves to the position where it is contacted with the first spool 61, it opens an opening end of the other communicating hole 55.