Abstract: An outer peripheral surface of a cylindrical cell is coated with a heat insulation material. A heat-resistant material is stacked radially outside the heat insulation material. An electrical insulation material is stacked radially outside the heat-resistant material. The order in which the heat insulation material, the heat-resistant material and the electrical insulation material are stacked one on top of another may be changed. A coating material other than the heat insulation material, the heat-resistant material and the electrical insulation material may be provided.

Abstract: A sodium-sulfur battery according to the present invention is provided with a reservoir space 100 that retains and solidifies a high-temperature molten material having flowed out of a cell 4, in order to prevent the high-temperature molten material from leaking out of a casing 1, even when an accident occurs to generate the high-temperature molten material inside the casing. The reservoir space 100 can be formed along a perimeter of the casing 1, or alternatively, can be formed inside the casing 1. The reservoir space 100 includes, for example, a composite member 15 of a rigid member 11, a heat-insulating material 12, and a heat-resisting material 13.

Abstract: A sodium-sulfur battery according to the present invention is provided with a reservoir space 100 that retains and solidifies a high-temperature molten material having flowed out of a cell 4, in order to prevent the high-temperature molten material from leaking out of a casing 1, even when an accident occurs to generate the high-temperature molten material inside the casing. The reservoir space 100 can be formed along a perimeter of the casing 1, or alternatively, can be formed inside the casing 1. The reservoir space 100 includes, for example, a composite member 15 of a rigid member 11, a heat-insulating material 12, and a heat-resisting material 13.

Abstract: An outer peripheral surface of a cylindrical cell is coated with a heat insulation material. A heat-resistant material is stacked radially outside the heat insulation material. An electrical insulation material is stacked radially outside the heat-resistant material. The order in which the heat insulation material, the heat-resistant material and the electrical insulation material are stacked one on top of another may be changed. A coating material other than the heat insulation material, the heat-resistant material and the electrical insulation material may be provided.

Abstract: An apparatus for producing group III nitride crystals includes a pressure container, a reaction vessel positioned in the pressure container, a supplier for supplying an interior of the pressure container with nitrogen gas and nitrogen mixed gas at 1 to 20 MPa, a heater for heating the reaction vessel in the pressure container to at least 700° C., a power unit, a seed crystal arrangement for holding a plurality of seed crystal substrates, a dry box part disposed outside the pressure container, and raising/lowering and rotational axes disposed outside the pressure container.

Abstract: There is provided a group III nitride crystal growth method capable of obtaining a material which is a GaN substrate of low defect density capable of being used as a power semiconductor substrate and in which characteristics of n-type and p-type requested for formation of transistor or the like. A growth method of group III nitride crystals includes: forming a mixed melt containing at least group III element and a flux formed of at least one selected from the group consisting of-alkaline metal and alkaline earth metal, in a reaction vessel; and growing group III nitride crystals from the mixed melt and a substance containing at least nitrogen, wherein after immersing a plurality of seed crystal substrates placed in an upper part of the reaction vessel in which the mixed melt is formed, into the mixed melt to cause crystal growth, the plurality of seed crystal substrates are pulled up above the mixed melt.

Abstract: There is provided a group III nitride crystal growth method capable of obtaining a material which is a GaN substrate of low defect density capable of being used as a power semiconductor substrate and in which characteristics of n-type and p-type requested for formation of transistor or the like. A growth method of group III nitride crystals includes: forming a mixed melt containing at least group III element and a flux formed of at least one selected from the group consisting of-alkaline metal and alkaline earth metal, in a reaction vessel; and growing group III nitride crystals from the mixed melt and a substance containing at least nitrogen, wherein after immersing a plurality of seed crystal substrates placed in an upper part of the reaction vessel in which the mixed melt is formed, into the mixed melt to cause crystal growth, the plurality of seed crystal substrates are pulled up above the mixed melt.

Abstract: A sealed water supply chamber 18 for a battery vessel 1 is formed by thermally bonding together the vessel, a lid member 2 having a plurality of vertically disposed level defining tubes 11, water inlet and gas outlet ports 12, and water pools or reservoirs 14 at each end, and a cover member 3 having threaded openings 16 at each end and downwardly depending cups 13 disposed above the respective tubes 11. Tight bonding is facilitated by molding the vessel, the lid member, and the cover member from the same thermoplastic material. L-shaped water inlet and outlet pipes 4 are screwed into the openings 16 and sealed by rubber packings 15, with the lower end of each pipe disposed just above the bottom of a water reservoir 14. Surplus water remaining in the reservoirs thus provides a gas barrier to isolate the chambers 18 of a plurality of batteries connected in an array, whereby a gas explosion in one battery cannot flash through the water connecing pipes to ignite the other batteries.