Abstract: Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1?xSb mixed crystal layer formed on a substrate, and an InAsxSb1?x (0<x?1) thin film conducting layer directly formed on the AlxIn1?xSb layer, in which the AlxIn1?xSb mixed crystal layer is a layer that exhibits higher resistance than the InAsxSb1?x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAsxSb1?x thin film conducting layer, and the a lattice mismatch is +1.3% to ?0.8%.

Abstract: The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlxGayIn1-x-ySb mixed crystal layer (0?x, y?1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.

Abstract: Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1-xSb mixed crystal layer formed on a substrate, and an InAsxSb1-x (0<x?1) thin film conducting layer directly formed on the AlxIn1-xSb layer, in which the AlxIn1-xSb mixed crystal layer is a layer that exhibits higher resistance than the InAsxSb1-x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAsxSb1-x thin film conducting layer, and the a lattice mismatch is +1.3% to ?0.8%.

Abstract: A wireless receiver, a wireless transceiver and a mobile terminal with the wireless receiver include a down-converter that can be used in common with respect to at least two different wireless communication systems using the same radio frequency band, and a local oscillation signal source capable of selecting an optimum C/N ratio for receiving at least two different wireless communication systems, wherein the local oscillation signal source is composed of a frequency divider, a switch, a first voltage controlled oscillator, a second voltage controlled oscillator, and a frequency synthesizer.

Abstract: The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlxGayIn1-x-ySb mixed crystal layer (0?x, y?1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.

Abstract: A solid material for a magnet, comprising a rare-earth/iron/nitrogen/hydrogen system magnetic material.

Abstract: A solid material for a magnet, comprising a rare-earth/iron/nitrogen/hydrogen system magnetic material.

Abstract: An InxGa1−xAsySb1−y (0<x≦1, 0≦y≦1) thin film of an electron concentration of 2×1016/cm3 or more is formed on a dielectric substrate. Temperature dependence of resistance is controlled by composition setting or donor atom doping of the thin film to reduce the temperature dependence. As a result, a magnetic sensor of small temperature dependence of device resistance and high sensitivity can be provided.

Abstract: A magnetic sensor with a signal processing circuit includes a magnetic sensor section 4 composed of a compound semiconductor thin film or a magnetic thin film, and a signal processing circuit 5 for amplifying a magnetic signal the magnetic sensor section detects as an electrical output. The signal processing circuit 5 includes an operational amplifier 51 and a constant current circuit 52 for carrying out feedback. The constant current circuit 52 in the signal processing circuit 5 includes a plurality of resistors with two or more different temperature coefficients, and the current output from the constant current circuit has a temperature coefficient inversely proportional to the temperature coefficient of the combined resistance of the plurality of the resistors.

Abstract: A magnetic sensor with a signal processing circuit includes a magnetic sensor section 4 composed of a compound semiconductor thin film or a magnetic thin film, and a signal processing circuit 5 for amplifying a magnetic signal the magnetic sensor section detects as an electrical output. The signal processing circuit 5 includes an operational amplifier 51 and a constant current circuit 52 for carrying out feedback. The constant current circuit 52 in the signal processing circuit 5 includes a plurality of resistors with two or more different temperature coefficients, and the current output from the constant current circuit has a temperature coefficient inversely proportional to the temperature coefficient of the combined resistance of the plurality of the resistors.

Abstract: The present invention is a method of fabrication of a thin film of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) having no lattice disorder, and its use in a sensor layer to obtain a high sensitivity semiconductor sensor having excellent temperature characteristics. The semiconductor sensor has a high resistance first compound semiconductor layer, a layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on this first layer, and an electrode formed on this layer. The first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the crystal of the sensor layer, and a band gap energy greater than that of the crystal. A second compound semiconductor layer similar to the first compound semiconductor layer may be formed on top of the sensor layer. A manufacturing method of such a semiconductor sensor is also included.

Abstract: A field effect transistor including a first compound semiconductor layer (2) serving as a buffer layer, an InAs layer (3) serving as a channel layer, and a second compound semiconductor layer (4) serving as an electron donor layer or a barrier layer which are, in this order, deposited on a semiconductor substrate (1) having a lattice constant different from that of InAs. The first compound semiconductor layer (2) is formed from a material selected from AlGaAsSb, AlGaPSb, AlInAsSb and AlInPSb which are substantially in lattice matching with InAs and have a bandgap greater than that of InAs, and hence the first layer (2) has a simple structure. An FET having excellent high frequency characteristics can be obtained on the substrate (1) having a lattice constant different from that of the InAs layer (3).

Abstract: A magnetoresistive sensor includes a magnetic field detecting portion composed of a ferromagnetic thin film formed on one side of an insulating rectangular substrate, at least two terminal electrode portions and wiring portions. In the magnetoresistive sensor, the surface level of at least two corner portions is lower than that of the surface portion of the substrate other than at least two corner portions on the one side of the substrate, the at least two terminal electrode portions are separately formed at the corner portions having the lower surface level and the magnetic field detecting portion composed of the ferromagnetic thin film is formed on a portion of the surface of the substrate other than the at least two corner portions.

Abstract: An InAs thin film formed by epitaxial growth on an insulating or semi-insulating substrate has a structure in which a portion near the interface of the InAs thin film with the substrate is a lower electron mobility portion, and another portion more remote from that interface is a higher electron mobility portion. The thin film is doped with donor impurity atoms in at least the high mobility portion. A magnetoelectric transducer has the InAs thin film as a magneto-sensitive portion. A magnetic amplifying type magnetoelectric transducer has a body of a ferromagnetic material arranged in the vicinity of the magneto-sensitive portion.

Abstract: A magnetoelectric transducer comprising a group III-V compound semiconductor thin film 14 of 0.1 .mu.m to 10 .mu.m thickness formed as a magnetic field sensing portion on a substrate 12 overlaying an organic insulating layer 13, and a multilayer wire bonding electrode including an ohmic electrode 16 formed on a required area of the thin film and a hard metal layer 17 and a bonding layer 18 which are laminated on the ohmic electrode.

Abstract: An artificial saliva composition comprising at least one buffering compound selected from the group consisting of chitins and chitosans in a medium. The artificial saliva composition has a pH buffering capacity similar to natural saliva and an excellent caries preventing effect.

Abstract: Magnetoresistive elements of ferromagnetic material having a high sensitivity and an excellent reliability have been manufactured. According to such an element, the sensitivity thereof can be enhanced by restricting the sheet resistance of wiring portions to a low value, and it is possible to prevent generation of an offset voltage due to a discrepancy in alignment by broadening the width of wiring portions at the connecting portions between magnetically sensitive members and the wiring portions to be wider than that of the magnetically sensitive members and arranging the connecting portions so as to be disposed in a geometrically symmetrical relationship therebetween. Such a structure is adapted for connecting the magnetically members and the wiring portions in a self-aligning manner.

Abstract: An article for electrical use such as insulative substrates, electrical circuit borads and electrical elements, wholly or partly consisting out of an aromatic polyamide-imide having a reduced viscosity of from about 0.3 to 1.5, which polyamide-imide may contain a granular material dispersed therein, and a composition comprising 100 parts by weight of said polyamide-imide and additional about 100 to 4,000 parts by weight of a granular material and optionally about 10 to 10,000 parts by weight of a polar organic solvent.

Abstract: An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 - positions and having therein amide linkages and terminal groups unsubstituted or partially substituted with acrylate or methacrylate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.

Abstract: An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 -positions and having therein amide linkages and terminal groups partially substituted with cinnamate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.