Abstract: A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

Abstract: A sensor device according to the present technology includes a stack sensor. The stack sensor includes a first sensor layer and a second sensor layer. The first sensor layer has, as a detection target, a first substrate in a culture solution, the first substrate being changed in accordance with a change in a state of a cell. The second sensor layer has, as a detection target, a second substrate in the culture solution and is provided on the first sensor layer, the second substrate being changed in accordance with the change in the state.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula (1) and a subphthalocyanine derivative represented by the following General formula (2).

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: An imaging element which is formed by sequentially stacking at least an anode, an anode-side buffer layer, a photoelectric conversion layer, and a cathode, in which the anode-side buffer layer includes a material having structural formula: in which thiophene and carbazole are combined.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes a first electrode and a second electrode opposed to each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material and a second semiconductor material that have mutually different mother skeletons, in which the first organic semiconductor material is fullerene or a fullerene derivative, and the second organic semiconductor material has a deeper HOMO level than the first organic semiconductor material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes a first electrode and a second electrode opposed to each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material and a second semiconductor material that have mutually different mother skeletons, in which the first organic semiconductor material is fullerene or a fullerene derivative, and the second organic semiconductor material has a deeper HOMO level than the first organic semiconductor material.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3):

Abstract: A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

Abstract: A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula (1) and a subphthalocyanine derivative represented by the following General formula (2).

Abstract: Devices, methods, and electronic apparatuses directed towards solid-state imaging devices that include: a pixel including an organic photoelectric conversion section, the organic photoelectric conversion section including an organic photoelectric conversion film (62), the organic photoelectric conversion film performing photoelectric conversion; a pigment included in the organic photoelectric conversion film, the pigment being two or more polymerized monomers, and the pigment having absorbance in ultraviolet to infared regions.

Abstract: Disclose herein is a method of modifying a positive-type chemically amplified resist pattern, including the steps of, applying to a surface of a resist pattern, an aqueous solution of a modifier for the positive-type chemically amplified resist pattern, the aqueous solution containing a water-soluble cross-linking agent and a penetration accelerator, the cross-linking agent and the penetration accelerator being dissolved in water or a mixed solvent containing water as a main ingredient, so as to permit the cross-linking agent to penetrate the resist pattern, removing a surplus of the cross-linking agent, and irradiating the resist pattern.

Abstract: A cell culturing device includes: an electrode on a surface of which a hydrophilicity/hydrophobicity converting material adapted to be electrically changed between hydrophilicity and hydrophobicity is provided. In this case, the electrode is disposed within a region in which a cell to be cultured is adapted to be accommodated. With the cell culturing device, the application of the suitable voltage to the electrode changes the hydrophilicity/the hydrophobicity of the hydrophilicity/hydrophobicity converting material. Thus, the feed material adsorbed to the hydrophilicity/hydrophobicity converting material is desorbed, thereby making it possible to feed the feed material to the cell.