Abstract: Line interconnecting means 50 comprises lower channel blocks 51 each having a line interconnecting channel 54 and arranged in an upper stage of lines B1, B2, B3 to be interconnected, at the same position with respect to the direction of the lines, and a plurality of upper channel blocks 57 each arranged on an upper side of the lower channel blocks 51 of adjacent lines interconnected and each having a transverse channel 58a extending orthogonal to the lines and downward channel 58b extending from the transverse channel 58a and communicating with the respective line interconnecting channels 54 of the lower channel blocks 51. Each of the lower channel blocks 51 is removably fastened to a coupling member in a lower stage with screws from above, and the upper channel blocks 57 are removably fastened to the lower channel blocks 51 with screws from above.

Abstract: Disclosed is a thin film aluminum alloy which is limited in the generation of hillocks while maintaining a low specific resistance and hardness irrespective of annealing temperature. In order to obtain the thin film aluminum alloy having a Vickers hardness of 30 Hv or less and a film stress (absolute value indication) of 30 kg/mm2 or less when performing annealing treatment at a temperature ranging from 25° C. to 500° C., wherein said hardness and said film stress are distributed in a predetermined hardness range and in a predetermined film stress range respectively within the temperature range of the above-mentioned annealing treatment and are respectively almost constant against annealing temperature, the thin film aluminum alloy being formed as a film on a substrate by a sputtering method using a sputtering target having a composition comprising 0.5 to 15 atom % of one or more types selected from Ag, Cu, Mg and Zn and 0.

Abstract: Disclosed is a thin film aluminum alloy which is limited in the generation of hillocks while maintaining a low specific resistance and hardness irrespective of annealing temperature. In order to obtain the thin film aluminum alloy having a Vickers hardness of 30 Hv or less and a film stress (absolute value indication) of 30 kg/mm2 or less when performing annealing treatment at a temperature ranging from 25° C. to 500° C., wherein said hardness and said film stress are distributed in a predetermined hardness range and in a predetermined film stress range respectively within the temperature range of the above-mentioned annealing treatment and are respectively almost constant against annealing temperature, the thin film aluminum alloy being formed as a film on a substrate by a sputtering method using a sputtering target having a composition comprising 0.5 to 15 atom % of one or more types selected from Ag, Cu, Mg and Zn and 0.