Abstract: Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

Abstract: Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.

Abstract: A polishing head assembly for single side polishing of silicon wafers is provided. The polishing head assembly includes a polishing head and a cap. The polishing head has a recess along a bottom portion, the recess having a recessed surface. The cap is positioned within the recess, and has an annular wall and a floor extending across the annular wall. The floor is spaced from the recessed surface to form a chamber therebetween. The chamber is configured to be pressurized for deflecting the floor. The annular wall is attached to the polishing head with an adhesive.

Abstract: A polishing head assembly for single side polishing of silicon wafers is provided. The polishing head assembly includes a polishing head and a cap. The polishing head has a recess along a bottom portion, the recess having a recessed surface. The cap is positioned within the recess, and has an annular wall and a floor extending across the annular wall. The floor is spaced from the recessed surface to form a chamber therebetween. The chamber is configured to be pressurized for deflecting the floor. The annular wall is attached to the polishing head with an adhesive.

Abstract: A housing having a suction port and a discharge port, an impeller 21 and a casing 22 that houses the impeller 21, an air blower 2 housed in the housing, a filter that lets through the air suctioned from the suction port by the air blower 2, and two ion generating sections that generate positive and negative ions are provided. The ion generating section is arranged on a circular-arc guide wall 2a in the casing 22. The positive and negative ions generated by the ion generating section are efficiently included in the air passing through as laminar flow along the circular-arc guide wall 22a.

Abstract: A polishing head assembly for single side polishing of silicon wafers includes a polishing head and a cap. The polishing head includes a top surface and a bottom surface and defines a longitudinal axis extending therethrough. The cap is positioned coaxially with the polishing head and includes an upper surface and a lower surface. The upper surface is spaced from the bottom surface of the polishing head to form a chamber that allows the cap to deflect toward the polishing head.

Abstract: The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.

Abstract: The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.

Abstract: The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.

Abstract: The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.

Abstract: A housing having a suction port and a discharge port, an impeller 21 and a casing 22 that houses the impeller 21, an air blower 2 housed in the housing, a filter that lets through the air suctioned from the suction port by the air blower 2, and two ion generating sections that generate positive and negative ions are provided. The ion generating section is arranged on a circular-arc guide wall 2a in the casing 22. The positive and negative ions generated by the ion generating section are efficiently included in the air passing through as laminar flow along the circular-arc guide wall 22a.

Abstract: A production method of a thin plate includes preparing a thin plate support with a receptacle cavity having a bottom surface formed with a complementary three-dimensional pattern with a three-dimensional pattern of one side surface of a machining object, setting the machining object within the receptacle cavity with mating the complementary three-dimensional pattern with the three-dimensional pattern on the one surface of the machining object, chucking the thin plate support carrying the machining object set in the receptacle cavity on a machine tool, driving the thin plate support together with the machining object to rotate, and machining the machining object as being driven to rotate on the machine tool from the other side of the machining object by means of a cutting tool.

Abstract: To provide a method for storing a carrier (3) for polishing a silicon wafer, which can store the carrier (3) in a manner to reduce scratches on the silicon wafer. The method includes storing a carrier (3) for use in polishing a silicon wafer completely immersed in a liquid. At least a substantial portion of the liquid is deionized water.

Abstract: A production method of a thin plate and a thin plate support for chucking to be employed in the method can avoid occurrence of deformation, such as bowing, kink and so forth in a processing object, such as coin irrespective of hardness of the material and can form window openings around three-dimensional pattern to le maintained.

Abstract: A method for processing a semiconductor wafer sliced from a single-crystal ingot comprises subjecting the front and back surfaces of the wafer to a lapping operation to reduce the thickness of the wafer and to remove damage caused during slicing of the wafer. The wafer is then subjected to an etching operation to further reduce the thickness of the wafer and to further remove damage remaining after the lapping operation. The wafer is subsequently subjected to a double-side polishing operation to uniformly remove damage from the front and back surfaces caused by the lapping and etching operations, thereby improving the flatness of the wafer and leaving polished front and back surfaces. Finally, the back surface of the wafer is subjected to a back surface damaging operation in which damage is induced in the back surface of the wafer while the front surface is substantially protected against being damaged or roughened.

Abstract: The invention provides an ornamental article which can be produced readily in a mass together at a low cost without requiring a special skill and a production method therefor. The ornamental article is produced by fixing a base plate element having a three-dimensional pattern portion formed integrally thereon, to a chucking member for a lathe such that the three-dimensional pattern portion is fittably received in a complementary receiving portion of the chucking member, rotating the chucking member, and machining the base plate element by means of a cutting tool to remove the material of the base plate element until a boundary plane between the base plate element and the three-dimensional pattern portion is reached. The three-dimensional pattern portion of the ornamental article produced has an outer peripheral portion whose thickness gradually decreases toward an outer peripheral edge thereof so as to define an outer periphery contour line without exhibiting a steeply rising end face.

Abstract: A winding reel for optical fiber is provided with a drum and a flange. The flange is provided with first and second slits therein for receiving leading and trailing (frontward and rearward) portions of the optical fiber. The length of the slit that receives the forward end of the optical fiber extends from the outer periphery of the flange to the surface of the drum. The slit for receiving the rearward end of the optical fiber is shorter than the forward end receiving slit. The rearward end receiving slit extends from the outer periphery of the flange inwardly a distance such that the slit does not reach a position at which a maximum amount of optical fiber wound on the winding reel is located.

Abstract: An apparatus for manufacturing a hermetically coated optical fiber having a single reaction chamber into which a fare fiber and raw gas are to be introduced for applying a hermetic coating to the bare fiber while the bare fiber passes through the reaction chamber is characterized by that the reaction chamber has a plurality of inlet tubes to introduce the raw gas, and the plurality of inlet tubes open to the reaction chamber at different positions from each other in a direction of movement of the bare fiber passing through said reaction chamber.

Abstract: A method, for screening an optical fiber, and an apparatus for carrying out the method, in which two sucking nozzles and a tape sticking device are provided to automatically perform processing of the end portions of the optical fiber; and an automatic fiber transporting/mounting device is provided to transport the succeeding portion of the optical fiber to the winding roll and mount, it on the winding roll; dancer rolls are provided in the longitudinal direction of an arm; and supporting rolls are movable between the path line of the optical fiber and a position removed from the path line.

Abstract: There is provided a process of melt drawing an optical fiber from a preform therefor in which a heating furnace comprising a muffle tube inside thereof through which the optical fiber is passed is provided immediately below a melt drawing furnace to further draw the optical fiber while heated, and an interior of the muffle tube is kept in an atmosphere selected from the group consisting of an inert atmosphere, an atmosphere comprising oxygen gas and an atmosphere comprising hydrogen gas.