Abstract: In a system for detecting a degree of unevenness of a surface of a semiconductor device, the surface is irradiated with light having a wavelength of approximately 240 nm to 500 nm. The degree of unevenness of the surface is determined in accordance with an intensity of reflected light from the surface.

Abstract: In a system for detecting a degree of unevenness of a surface of a semiconductor device, the surface is irradiated with light having a wavelength of approximately 240 nm to 500 nm. The degree of unevenness of the surface is determined in accordance with an intensity of reflected light from the surface.

Abstract: The method of fabricating a semiconductor device, includes the steps of (a) forming gate oxides on regions separated by device isolation regions, (b) depositing an amorphous silicon or a polysilicon film, (c) depositing a removable space-forming film over the silicon film, (d) patterning the space-forming film and the silicon film into the same shape to form a gate electrode comprising the thus patterned space-forming film and silicon film, (e) depositing a silicon nitride film, (f) etching the silicon nitride film to form a first sidewall around a sidewall of the gate electrode, (g) depositing a silicon oxide film, (h) etching the silicon oxide film to form a second sidewall around and onto the first sidewall, (i) etching the space-forming film with hydrofluoric anhydride for removal so that the silicon film is exposed and the first sidewall remains unremoved, (j) forming source/drain regions, and (k) selectively depositing a refractory metal or metal silicide film on the silicon film and the source/drain re

Abstract: A capacitor incorporated in a semiconductor integrated circuit device is expected to have a large amount of capacitance without increase of the occupation area, and has a lower electrode increased in surface area by using a roughening technique selected from the group consisting of an anodizing technique, an anodic oxidation, a wet etching and a dry etching so that a surface of the lower electrode becomes porous, thereby increasing the capacitance.