Patents by Inventor Ichirou Nagai

Ichirou Nagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
    Patent number: 8641821
    Abstract: Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible. The seed crystal is placed so as to face the aluminum nitride raw material. The crucible includes an inner crucible and an outer crucible. The inner crucible stores the aluminum nitride raw material and the seed crystal inside the inner crucible. The inner crucible is also corrosion resistant to a sublimation gas of the aluminum nitride raw material. The inner crucible includes either, a single body of a metal having an ion radius larger than an ion radius of an aluminum, or includes a nitride of the metal. The outer crucible includes a boron nitride. The outer crucible covers the inner crucible.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: February 4, 2014
    Assignees: National Institute of Advanced Industrial Science and Technology, Fujikura Ltd.
    Inventors: Tomohisa Katou, Ichirou Nagai, Tomonori Miura, Hiroyuki Kamata
  • APPARATUS FOR MANUFACTURING ALUMINUM NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING ALUMINUM NITRIDE SINGLE CRYSTAL, AND ALUMINUM NITRIDE SINGLE CRYSTAL
    Publication number: 20120039789
    Abstract: Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible. The seed crystal is placed so as to face the aluminum nitride raw material. The crucible includes an inner crucible and an outer crucible. The inner crucible stores the aluminum nitride raw material and the seed crystal inside the inner crucible. The inner crucible is also corrosion resistant to a sublimation gas of the aluminum nitride raw material. The inner crucible includes either, a single body of a metal having an ion radius larger than an ion radius of an aluminum, or includes a nitride of the metal. The outer crucible includes a boron nitride. The outer crucible covers the inner crucible.
    Type: Application
    Filed: October 21, 2011
    Publication date: February 16, 2012
    Applicants: FUJIKURA LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Tomohisa KATOU, Ichirou NAGAI, Tomonori MIURA, Hiroyuki KAMATA
  • Single crystal growing apparatus
    Publication number: 20070131162
    Abstract: The object of the present invention is to provide a compact and inexpensive single-crystal growth apparatus. The single-crystal growth apparatus of the present invention which comprises spheroid mirrors 11, 12, heat sources 13, 14 located at the one foci F1, F2 of the spheroid mirrors 11, 12, a quartz tube 16 enclosing a heating zone 15 of the common focus F0 on the other side, and, in the quartz tube 16, a feed rod 18 supported by an upper crystal drive shaft 17 and a seed crystal rod 20 supported by a lower crystal drive shaft 19. The interfocal distance between the foci F1, F2 and the foci F0 is made 41.4-67.0 mm and the minor axis/major axis ratio of the spheroid mirrors is set to 0.90-0.95.
    Type: Application
    Filed: February 4, 2005
    Publication date: June 14, 2007
    Applicants: Nec Machinery Corporation, National Inst of Adv. Industrial Sci. and Tech
    Inventors: Hiroshi Nishimura, Toru Nagasawa, Ryusuke Iwasaki, Shinichi Ikeda, Naoki Shirakawa, Hiroshi Eisaki, Norio Umeyama, Yoshiyuki Yoshida, Ichirou Nagai, Shigeo Hara