Abstract: A filter apparatus includes a conductive housing disposed below an electronic device, to which a cooling air current is supplied from a lower side to an upper side, and including a bottom surface frame having a first opening and an upper surface frame having a second opening; terminals provided on the bottom surface and insulated from the housing; a filter including a filter part that removes dust of the air current and a filter frame retaining the filter; and an electric potential detecting part coupled to the terminals and configured to detect electric potentials of the terminals to detect a change of an electric potential, in a state in which the air current is supplied to the electronic device via the filter part, with respect to an electric potential in a state in which the filter frame is in contact with the bottom surface frame and the terminals.

Abstract: A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxygen-deficient transition metal oxide, the second electrode has a single needle-shaped part at an interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the single needle-shaped part.

Abstract: A method of manufacturing a nonvolatile memory device includes: forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas.

Abstract: Provided is a method for manufacturing a variable resistance nonvolatile storage device, which prevents electrical conduction between lower electrodes and upper electrodes of variable resistance elements in the memory cell holes. The method includes: forming lower copper lines; forming a third interlayer insulating layer; forming memory cell holes in the third interlayer insulating layer, an opening diameter of upper portions of the memory cell holes being smaller than bottom portions; forming a metal electrode layer on the bottom of each memory cell holes by sputtering; embedding and forming a variable resistance layer in each memory cell hole; and forming upper copper lines connected to the variable resistance layer embedded and formed in each memory cell hole.

Abstract: A method of manufacturing a nonvolatile memory device includes: forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas.

Abstract: A method of manufacturing a nonvolatile memory element, the method including: forming a first lower electrode layer, a current steering layer, and a first upper electrode layer; forming a second lower electrode layer, a variable resistance layer, and a second upper electrode layer on the first upper electrode layer; patterning the second upper electrode layer, the variable resistance layer, and the lower electrode layer; patterning the first upper electrode layer, the current steering layer, and first lower electrode layer to form a current steering element, using the second lower electrode layer as a mask by use of etching which is performed on the second lower electrode layer at an etching rate lower than at least etching rates at which the second upper electrode layer and the variable resistance layer are etched; and forming a variable resistance element which has an area smaller than the area of the current steering element.

Abstract: A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first transition metal oxide layer, the second electrode has a single needle-shaped part at the interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the needle-shaped part.

Abstract: Provided is a method for manufacturing a variable resistance nonvolatile storage device, which prevents electrical conduction between lower electrodes and upper electrodes of variable resistance elements in the memory cell holes. The method includes: forming lower copper lines; forming a third interlayer insulating layer; forming memory cell holes in the third interlayer insulating layer, an opening diameter of upper portions of the memory cell holes being smaller than bottom portions; forming a metal electrode layer on the bottom of each memory cell holes by sputtering; embedding and forming a variable resistance layer in each memory cell hole; and forming upper copper lines connected to the variable resistance layer embedded and formed in each memory cell hole.

Abstract: In order to separate and remove a dangerous substance such as yellow phosphorus from exhaust gas generated in a semiconductor fabricating process by chemical vapor deposition, the exhaust gas is bathed in operating oil of a cooled oil tank of an oil-sealed rotary vacuum pump so that molecules of the yellow phosphorus or the like are caught by the cooled operating oil so as to be enveloped in the operating oil. Thus, a mixture operating oil of the substance and the operating oil is generated in the form of colloid. The mixture operating oil is passed through an oil filter of a filtration device so that the substance such as yellow phosphorus is precipitated by the filter and then the substance is removed. Meanwhile, the operating oil as a filtrate from which the substance has been filtered is cooled by an oil-temperature controller, and then returned to the oil-sealed rotary vacuum pump.

Abstract: Opposite surfaces or sides of a mirror in an optical system are supported in a spring-biased manner at three points in total. This prevents a shift in position of the mirror that otherwise might occur due to shocks during reciprocal movement of the optical system.

Abstract: A cooling system for an image forming machine which is provided with a single temperature sensor for detecting a temperature inside the image forming machine, an operating section for setting the number of sheets to be copied continuously, a judgment circuit for determining a voltage value applied to a cooling fan in accordance with the set number of sheets and the temperature detected by the temperature sensor, and a drive control circuit for controlling the voltage applied to the cooling fan in accordance with the voltage value determined by the judgment circuit and drive the cooling fan.

Abstract: A joint type robot comprises a fixed bed, a swivel base on the fixed bed, a motor base on the swivel base, an upper arm capable of elevating on the motor base, a front arm capable of elevating at the tip of the upper arm, a wrist at the tip of the front arm, and so forth. The upper arm extends rearward beyond the center axis of rotation of its elevating motion. The rearwardly extending portion can enter a notch of the motor base. A driving motor for turning the swivel base is disposed at a position deviated from the center axis of rotation and in parallel with the center axis of rotation. The pair of driving motors for the upper and front arms are mounted on the motor base parallel to each other yet oriented in opposite directions to keep the robot as small as possible. The wrist driving motors are mounted on the upper arm in similar fashion. All the features of the robot are designed to keep the robot as small and as light as possible.

Abstract: A copying machine paper supply enables various paper supply cassettes having different volumes to be easily accommodated in only one large space. Cassette holding members are formed at opposite sides of the space and receive guide portions formed on opposite sides of each paper supply cassette. The cassette thus is housed in the space and is supported at the opposite sides thereof only.