Patents by Inventor Ick Jin Kwon

Ick Jin Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9116034
    Abstract: A wireless measurement device includes a sound acoustic wave (SAW)-based micro sensor converting a wirelessly received pulse signal into an SAW and generating a plurality of pulse signals by reflecting the SAW, and wirelessly transmitting the plurality of pulse signals to measure a variance of an environmental element; and a reader generating and wirelessly transmitting a pulse signal to the SAW-based micro sensor to measure variances in environmental elements.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: August 25, 2015
    Assignee: AJOU UNIVERSITY INDUSTRY COOPERATION FOUNDATION
    Inventors: Sang Sik Yang, Ik Mo Park, Young kil Kim, Kee Keun Lee, Ick Jin Kwon, Hae Kwan Oh
  • Publication number: 20130174662
    Abstract: A wireless measurement device includes a sound acoustic wave (SAW)-based micro sensor converting a wirelessly received pulse signal into an SAW and generating a plurality of pulse signals by reflecting the SAW, and wirelessly transmitting the plurality of pulse signals to measure a variance of an environmental element; and a reader generating and wirelessly transmitting a pulse signal to the SAW-based micro sensor to measure variances in environmental elements.
    Type: Application
    Filed: September 14, 2011
    Publication date: July 11, 2013
    Applicant: AJOU UNIVERSITY INDUSTRY COOPERATION FOUNDATION
    Inventors: Sang Sik Yang, Ik Mo Park, Young kil Kim, Kee Keun Lee, Ick Jin Kwon, Hae Kwan Oh
  • Patent number: 7835716
    Abstract: An RF receiver and an RF receiving method are provided using a baseband signal in which a DC offset is removed. In the RF receiver, a noise phase removing unit generates a phase controlled local signal PLOQ in which a phase of a Q signal of a local signal LOQ is controlled, by synthesizing a received RF signal RXIN and the Q signal of the local signal LOQ. A down converter generates a signal in which a DC offset from noise introduced into the received RF signal RXIN is removed, when synthesizing the received RF signal RXIN and the phase controlled local signal PLOQ for frequency-down conversion.
    Type: Grant
    Filed: June 12, 2006
    Date of Patent: November 16, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ick Jin Kwon, Heung Bae Lee, Yun Seong Eo, Hee Mun Bang
  • Patent number: 7702047
    Abstract: An RF receiving apparatus and method which can remove a leakage component in a received signal are provided. In the RF receiving apparatus, a noise removing unit estimates a signal corresponding to a noise component introduced into a received RF signal RXIN by controlling a gain and a phase of a local signal LOI and removes the estimated noise signal from the received RF signal RXIN. An RF signal in which the noise is removed is frequency-down converted in a receiving unit. Also, the noise removing unit utilizes a Q signal of the local signal LOI, LOQ, to control the phase of the local signal LOI.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ick Jin Kwon, Heung Bae Lee, Yun Seong Eo
  • Patent number: 7689170
    Abstract: A radio frequency (RF) receiver and receiving method are provided which can remove a leakage component from a received signal by using a local signal. In the RF receiver, a noise removing unit controls a gain and a phase of a local signal LOI according to a phase THETA and a gain AMPTD detected in a MODEM, estimates a signal Vcal corresponding to a noise component introduced into a received RF signal RXIN, and removes the estimated signal Vcal from the received RF signal RXIN. In this manner, a clean RF signal RXO, which does not include a noise component, is frequency-down converted in a receiving unit.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: March 30, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ick Jin Kwon, Heung Bae Lee
  • Patent number: 7528656
    Abstract: Provided is an amplifier including: an amplifier circuit receiving differential signals to generate amplified differential signals; a buffer generating buffered signals by buffering each signal generated by controlling a direct current (DC) component of the differential signals; and an impedance matching device coupled between two terminals wherein each of the buffered signals is added with each of the amplified differential signal.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: May 5, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong Hyun Lee, Heung Bae Lee, Ick Jin Kwon, Ju No Kim, Ka Ram Ann
  • Publication number: 20070290754
    Abstract: Provided is an amplifier including: an amplifier circuit receiving differential signals to generate amplified differential signals; a buffer generating buffered signals by buffering each signal generated by controlling a direct current (DC) component of the differential signals; and an impedance matching device coupled between two terminals wherein each of the buffered signals is added with each of the amplified differential signal.
    Type: Application
    Filed: November 9, 2006
    Publication date: December 20, 2007
    Inventors: Dong Hyun Lee, Heung Bae Lee, Ick Jin Kwon, Ju No Kim, Ka Ram Ann
  • Patent number: 6556085
    Abstract: A low power low noise amplifier achieves a high power gain without increasing power consumption by sharing the bias current. The amplifier is composed of a cascade structure which consists of a parallel connected common source transistor and common gate transistor connected to a common source transistor, an inverter type structure connected to the common source transistor, and structure improving the third-order intermodulation component using the parallel connected common source transistor and common gate transistor.
    Type: Grant
    Filed: April 9, 2001
    Date of Patent: April 29, 2003
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Ick Jin Kwon, Joon Ho Gil, Hyung Cheol Shin
  • Publication number: 20020084855
    Abstract: The present invention relates to a low power low noise amplifier, more particularly to the low power low noise amplifier composed with low power by sharing the bias current.
    Type: Application
    Filed: April 9, 2001
    Publication date: July 4, 2002
    Inventors: Ick Jin Kwon, Joon Ho Gil, Hyung Cheol Shin