Patents by Inventor Ick Hyun SONG

Ick Hyun SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device, precharge controlling method thereof, and devices having the same
    Patent number: 8861264
    Abstract: A pre-charge controlling method and device are provided. The pre-charge controlling method includes pre-charging a first global bit line with a first pre-charge voltage by using at least a first pre-charge circuit located between a plurality of sub arrays included in a memory cell array and pre-charging the first global bit line with a second pre-charge voltage by using a second pre-charge circuit located outside the memory cell array.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: October 14, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ick Hyun Song, Ki Whan Song, Jin-Young Kim
  • Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory
    Patent number: 8837197
    Abstract: A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: September 16, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Hoon Oh, Young-Don Choi, Ick-Hyun Song
  • Resistive memory device capable of blocking a current flowing through a memory cell for fast quenching
    Patent number: 8760942
    Abstract: A resistive memory device includes a plurality of first switches that connect word lines to a ground line in response a first switch control signal and a plurality of second switches that connect a plurality of global bit lines to a plurality of local bit lines corresponding to the plurality of global bit lines in response to a second switch control signal.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: June 24, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Hoon Oh, Young Don Choi, Ick Hyun Song
  • CIRCUIT FOR GENERATING WRITE SIGNAL, VARIABLE RESISTANCE MEMORY DEVICE, AND METHOD FOR PROGRAMMING VARIABLE RESISTANCE MEMORY
    Publication number: 20130051120
    Abstract: A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.
    Type: Application
    Filed: February 9, 2012
    Publication date: February 28, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: YOUNG-HOON OH, YOUNG-DON CHOI, ICK-HYUN SONG
  • MEMORY DEVICE, PRECHARGE CONTROLLING METHOD THEREOF, AND DEVICES HAVING THE SAME
    Publication number: 20120033489
    Abstract: A pre-charge controlling method and device are provided. The pre-charge controlling method includes pre-charging a first global bit line with a first pre-charge voltage by using at least a first pre-charge circuit located between a plurality of sub arrays included in a memory cell array and pre-charging the first global bit line with a second pre-charge voltage by using a second pre-charge circuit located outside the memory cell array.
    Type: Application
    Filed: July 8, 2011
    Publication date: February 9, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ick Hyun SONG, Ki Whan SONG, Jin-Young KIM