Abstract: A computer-implemented method according to one embodiment includes collecting, by the computer, performance data corresponding to a tape drive and/or a magnetic tape head. The performance data is stored in memory, and used by the computer to perform problem analysis. A computer-implemented method according to another embodiment includes collecting, by the computer, performance data corresponding to a tape drive and/or a magnetic tape head. The collected performance data is condensed to reduce a size of the collected performance data. The condensed performance data is stored in memory, and used to perform problem analysis.

Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.

Abstract: A method operates a digital measurement unit and an ambient temperature control unit as to a plurality of TMR sensors, each having a geometry including area Amr and tunnel barrier thickness tB. The method includes dividing the plurality of TMR sensors into test groups. For each test group, the method includes setting the ambient air temperature Tair, applying a voltage pulse at Vdeg and time ?p Npulse times until dielectric breakdown, and appending Npulse and ?p to a dataset. The method includes fitting a survival fraction of form: S ? ( t deg , ? db ) = ? - ( t deg ? db ) ? versus Npulse, wherein tdeg=Npulse·?p, to determine ? and ?db. The method includes determining a temperature rise based on ?p, determining, based on the temperature rise, ?mr(?db,Amr), and determining T mr = T air + P mr ? mr ? ( ? db , A mr ) based on ?mr(?db,Amr).

Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.

Abstract: A magneto-resistive (MR) sensor protection circuit is disclosed, for the protection of an MR sensor. The MR sensor may have a safe operating voltage range, a normal operating voltage range within the safe operating voltage range, and two terminals coupled to a read channel circuit, including a positive terminal and a negative terminal. The MR sensor protection circuit may have positive and negative protection threshold voltage ranges. The MR sensor protection circuit may also have a plurality of N-channel field-effect transistors (NFETs) that are coupled to the positive terminal and to the negative terminal, and configured to, in response to a voltage between the two terminals being within either the positive or the negative protection threshold voltage range, limit the voltage between the terminals by shunting current between the positive terminal and the negative terminal.

Abstract: A system according to one embodiment includes a magnetic structure having a tunnel junction, and a controller and logic integrated with and/or executable by the controller. The logic is configured to reduce a local relative humidity in a vicinity of the tunnel junction by passing a current through the tunnel junction for at least a period of time that the tunnel junction would otherwise not have a current passing therethrough. A method according to one embodiment includes determining a relative humidity in an environment of a tunnel junction that is part of a magnetic structure and selecting an operating current from a range of allowable operating currents based on the determined relative humidity. The selected level of the current is high enough to heat the tunnel junction to a temperature which reduces a local relative humidity in a vicinity of the tunnel junction.

Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.

Abstract: A first dissipative adhesive (DA) is connected to at least a portion of leads that are exposed in a first plane of a flexible cable in a coverage area. A second DA is connected over at least a portion of the first DA. A third DA is connected to a ground and over a fourth DA. A servo connection is electrically connected to a grounding tab via the third DA. A common bus bar is connected to the portion of the leads via the second DA.

Abstract: Embodiments of the invention relate to electrostatic discharge (ESD) protection. One embodiment includes a first dissipative adhesive (DA) connected to at least a portion of multiple leads in a first plane of a flexible cable in a coverage area for providing ESD protection to at least one element of an electronic device. A common bus bar is connected to the leads in a second plane of the flexible cable. Conductivity of the common bus bar is greater than conductivity of the first DA and the first plane and the second plane are different planes of the flexible cable.

Abstract: ESD protection circuitry that includes one, or more, of the following features, characteristics and/or advantages: (i) use of different “diode types” (for example, Schottky type, PN type, p-type diode-connected field-effect transistor (FET) type, NFET type)) in a series-connected diode set (connected in series with respect to a device-under-protection) and a parallel-connected diode set (connected in parallel with respect to a device-under-protection and the series-connected diode set); (ii) a FET is connected in series with a target device such that the FET's gate can be turned on during normal operation and the FET's gate is resistively coupled to the FET's source; and/or (iii) two FETs are connected in series with a target device such both FETs gates can be turned on during normal operation, one FET's gate is resistively coupled to its source, and the other FET's gate is electrically coupled to its drain.

Abstract: A system for testing a magnetic sensor according to one embodiment includes a discharge circuit to cause a discharge event on a magnetic sensor; a bias generation circuit to apply at least one first bias current to the sensor and at least one second bias current to the sensor, the second bias current being different than the first bias current; a resistance determination circuit to determine a resistance of the magnetic sensor at each of the applied bias currents; and a damage determination circuit to determine whether the magnetic sensor is damaged and/or was fixed by a discharge event based on the resistances.

Abstract: A method includes identifying a microelectronic device located at an air bearing surface. The method further includes identifying a resistive heating element electrically isolated the said microelectronic device; applying a bias current through the resistive heating element to generate localized heat to heat the microelectronic device; identifying a predetermined humidity threshold and a separation distance between the microelectronic device and the resistive heating element in at least one dimension; measuring an ambient temperature at the air bearing surface; measuring an ambient relative humidity at the air bearing surface; determining an effective temperature; and adjusting the bias current to heat the microelectronic device to the effective temperature. The resistive heating element is one of a plurality, and at least two of the plurality of resistive heating elements are powered from a common source such that at least two of the resistive heating elements are commonly controllable via a common source.

Abstract: A structure includes an air bearing surface including a plurality of material layers arranged in at least one dimension on the air bearing surface. The structure further includes a microelectronic device and a resistive heating element, which each include at least one of the plurality of material layers. The resistive heating element is electrically isolated from the microelectronic device. The microelectronic device is heated by said resistive heating element. Optionally, a structure includes a tape reader or a tape writer, located at an air bearing surface. A resistive heating element is electrically isolated from the tape reader or writer and heats the tape reader or the tape writer. Optionally, a method includes identifying a microelectronic device located at an air bearing surface, identifying a resistive heating element, which is electrically isolated from the microelectronic device, applying a bias current through the resistive heating element to heat the microelectronic device.

Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.

Abstract: According to one embodiment a method of performing a calibration correlation test for a calibration assembly includes sweeping a head module having a magnetic read sensor along a y-axis of the calibration assembly. The calibration assembly has at least one calibration trench having at least one nanoparticle at a known y-axis location in the calibration trench and the magnetic properties are known for the at least one nanoparticle. A read response of the at least one nanoparticles is obtained from the magnetic read sensor and a correlation is determined from the read response. The correlation of the read response is compared to a correlation threshold. The read response correlation is stored in memory in response to determining that the correlation of the read response is greater than the correlation threshold. When the correlation of the read response is not greater than the correlation threshold, a correlation test error is indicated.

Abstract: A system for testing a magnetic sensor according to one embodiment includes a discharge circuit to cause a discharge event on a magnetic sensor; a bias generation circuit to apply at least one first bias current to the sensor and at least one second bias current to the sensor, the second bias current being different than the first bias current; a resistance determination circuit to determine a resistance of the magnetic sensor at each of the applied bias currents; and a damage determination circuit to determine whether the magnetic sensor is damaged and/or was fixed by a discharge event based on the resistances.

Abstract: A computer program product according to one embodiment includes a computer readable storage medium having program instructions embodied therewith. The program instructions area executable by a data processing system having at least one processor to cause the data processing system to apply, by the data processing system, a current to a lead of a tunneling magnetoresistance (TMR) sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintain, by the data processing system, the current at the level for an amount of time sufficient to anneal the sensor.

Abstract: A magneto-resistive (MR) sensor protection circuit is disclosed, for the protection of an MR sensor. The MR sensor may have a safe operating voltage range, a normal operating voltage range within the safe operating voltage range, and two terminals coupled to a read channel circuit, including a positive terminal and a negative terminal. The MR sensor protection circuit may have positive and negative protection threshold voltage ranges. The MR sensor protection circuit may also have a plurality of N-channel field-effect transistors (NFETs) that are coupled to the positive terminal and to the negative terminal, and configured to, in response to a voltage between the two terminals being within either the positive or the negative protection threshold voltage range, limit the voltage between the terminals by shunting current between the positive terminal and the negative terminal.

Abstract: Embodiments of the present invention provide methods, systems, and computer program products for detecting damage to tunneling magnetoresistance (TMR) sensors. In one embodiment, resistances of a TMR sensor are measured upon application of one or both of negative polarity bias current and positive polarity bias current at a plurality of current magnitudes. Resistances of the TMR sensor can then be analyzed with respect to current, voltage, voltage squared, and/or power, including analyses of changes to slopes calculated with these values and hysteresis-induced fluctuations, all of which can be used to detect damage to the TMR sensor. The present invention also describes methods to utilize the measured values of neighbor TMR sensors to distinguish normal versus damaged parts for head elements containing multiple TMR read elements.

Abstract: A method of designing, for a magneto-resistive (MR) sensor, a protection circuit having a first and a second N-channel field-effect transistor (NFET) and at least one positive-negative (PN) diode is disclosed. The method may include determining a safe operating voltage range for the MR sensor and determining, within the safe operating voltage range, a normal operating voltage range for the MR sensor. The method may also include determining a protection threshold voltage range outside of the normal operating voltage range and within the safe operating voltage range of the MR sensor. The method may also include selecting device parameters to configure the first and second NFETs and the at least one PN diode to, in response to a voltage applied to the MR sensor being within a protection threshold voltage range, limit, by shunting current, the voltage applied to the MR sensor.