Abstract: A product includes a semiconductor substrate, with at least first and second thin-film layers disposed on the substrate and patterned to define a matrix of dies, which are separated by scribe lines and contain active areas circumscribed by the scribe lines. A plurality of overlay targets are formed in the first and second thin-film layers within each of the active areas, each overlay target having dimensions no greater than 10 ?m×10 ?m in a plane parallel to the substrate. The plurality of overlay targets include a first linear grating formed in the first thin-film layer and having a first grating vector, and a second linear grating formed in the second thin-film layer, in proximity to the first linear grating, and having a second grating vector parallel to the first grating vector.

Abstract: An interferometric overlay tool may include an interferometer and a controller. The interferometer may include one or more beamsplitters to split illumination including one or more wavelengths into a probe beam along a probe path and a reference beam along a reference path, one or more illumination optics to illuminate a grating-over-grating structure with the probe beam, one or more collection optics to collect a measurement beam from the grating-over-grating structure, one or more beam combiners to combine the measurement beam and the reference beam as an interference beam, and a variable phase delay configured to vary an optical path difference (OPD) in the interferometer. The controller may receive one or more interference signals representative of interferometric phase data associated with a plurality of OPD values and the one or more wavelengths from a detector and determine an overlay error of the grating-over-grating structure based on the interferometric phase data.

Abstract: A system and method for generating an angular calibration factor (ACF) for a metrology tool useful in a fabrication process, the method including providing the metrology tool, the metrology tool including a stage and a housing, measuring a rotational orientation of the stage relative to the housing and generating the ACF for the stage based at least partially on the rotational orientation.

Abstract: A product includes a semiconductor substrate, with at least first and second thin-film layers disposed on the substrate and patterned to define a matrix of dies, which are separated by scribe lines and contain active areas circumscribed by the scribe lines. A plurality of overlay targets are formed in the first and second thin-film layers within each of the active areas, each overlay target having dimensions no greater than 10 ?m×10 ?m in a plane parallel to the substrate. The plurality of overlay targets include a first linear grating formed in the first thin-film layer and having a first grating vector, and a second linear grating formed in the second thin-film layer, in proximity to the first linear grating, and having a second grating vector parallel to the first grating vector.

Abstract: An interferometric overlay tool may include an interferometer and a controller. The interferometer may include one or more beamsplitters to split illumination including one or more wavelengths into a probe beam along a probe path and a reference beam along a reference path, one or more illumination optics to illuminate a grating-over-grating structure with the probe beam, one or more collection optics to collect a measurement beam from the grating-over-grating structure, one or more beam combiners to combine the measurement beam and the reference beam as an interference beam, and a variable phase delay configured to vary an optical path difference (OPD) in the interferometer. The controller may receive one or more interference signals representative of interferometric phase data associated with a plurality of OPD values and the one or more wavelengths from a detector and determine an overlay error of the grating-over-grating structure based on the interferometric phase data.

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

Abstract: A computer program product, a computerized method for configuring an inspection system and an inspection system. The inspection system may include an image acquisition module that comprises illumination optics and collection optics, a controller; and a processor. The image acquisition module may be arranged to acquire a group of first images of an object segment. Different first images of the group of first images are acquired while the inspection system is configured with different polarization configurations that belong to a first group of polarization configurations.

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

Abstract: An illumination module that includes a pair of anamorphic prisms that comprises a first anamorphic prism and a second anamorphic prism; wherein the pair of anamorphic prisms is configured to (a) receive a first radiation beam that propagates along a first optical axis, and (b) asymmetrically magnify the first radiation beam to provide a second radiation beam that propagates along a second optical axis that is parallel to the first optical axis; and a rectangular prism that is configured to receive the second radiation beam and perform a lateral shift of the second radiation beam to provide a third radiation beam; and a rotating mechanism that is configured to change an asymmetrical magnification of the pair of anamorphic prisms by rotating at least one of the first anamorphic prism and the second anamorphic prism.

Abstract: A computer program product, a computerized method for configuring an inspection system and an inspection system. The inspection system may include an image acquisition module that comprises illumination optics and collection optics, a controller; and a processor. The image acquisition module may be arranged to acquire a group of first images of an object segment. Different first images of the group of first images are acquired while the inspection system is configured with different polarization configurations that belong to a first group of polarization configurations.

Abstract: An illumination module that includes a pair of anamorphic prisms that comprises a first anamorphic prism and a second anamorphic prism; wherein the pair of anamorphic prisms is configured to (a) receive a first radiation beam that propagates along a first optical axis, and (b) asymmetrically magnify the first radiation beam to provide a second radiation beam that propagates along a second optical axis that is parallel to the first optical axis; and a rectangular prism that is configured to receive the second radiation beam and perform a lateral shift of the second radiation beam to provide a third radiation beam; and a rotating mechanism that is configured to change an asymmetrical magnification of the pair of anamorphic prisms by rotating at least one of the first anamorphic prism and the second anamorphic prism.

Abstract: An inspection system that may include a first detection module, an illumination and collection module, and a processor. The illumination and collection module and the first detection module may be configured to execute one or more illumination and collection iterations. Each inspection iteration may include: illuminating with illuminating radiation multiple points of an object; (ii) directing first collected radiation from the multiple points of the object through one or more first exit pupil regions towards the first detection module; and (iii) generating first detection signals that may be indicative of the first collected radiation. The processor may be configured to process the first detection signals to provide a first mapping between (i) a characteristic of radiation at the first exit pupil, (ii) the multiple points of the object, and (iii) the multiple first exit pupil regions.

Abstract: An inspection system that may include a first detection module, an illumination and collection module, and a processor. The illumination and collection module and the first detection module may be configured to execute one or more illumination and collection iterations. Each inspection iteration may include: illuminating with illuminating radiation multiple points of an object; (ii) directing first collected radiation from the multiple points of the object through one or more first exit pupil regions towards the first detection module; and (iii) generating first detection signals that may be indicative of the first collected radiation. The processor may be configured to process the first detection signals to provide a first mapping between (i) a characteristic of radiation at the first exit pupil, (ii) the multiple points of the object, and (iii) the multiple first exit pupil regions.

Abstract: A system, including an illumination module that comprises (a) a first traveling lens acousto-optic device; (b) a light source for illuminating the first traveling lens to provide an input beam that propagates along a first direction; (c) illumination optics for outputting an output beam that scans the object at a second direction; a detection unit; and a collection module for collecting a collected beam from the object, wherein the collected beam propagates along a third direction; and optically manipulating the collected beam to provide a counter-scan beam is directed towards the detection unit and has a focal point that is positioned at a same location regardless of the propagation of the collected beam along the third direction.

Abstract: A system, including an illumination module that comprises (a) a first traveling lens acousto-optic device; (b) a light source for illuminating the first traveling lens to provide an input beam that propagates along a first direction; (c) illumination optics for outputting an output beam that scans the object at a second direction; a detection unit; and a collection module for collecting a collected beam from the object, wherein the collected beam propagates along a third direction; and optically manipulating the collected beam to provide a counter-scan beam is directed towards the detection unit and has a focal point that is positioned at a same location regardless of the propagation of the collected beam along the third direction.

Abstract: A method and an apparatus that may include optics that is arranged to illuminate a surface of a sample with radiation and to collect reflected radiation from the surface of the sample; wherein the optics includes a pupil that has multiple pupil segments that correspond to different angular regions of collection or illumination; and a detection module arranged to receive the reflected radiation and generate, for each pupil segment, pupil segment detection signals.

Abstract: A method and an apparatus that may include optics that is arranged to illuminate a surface of a sample with radiation and to collect reflected radiation from the surface of the sample; wherein the optics includes a pupil that has multiple pupil segments that correspond to different angular regions of collection or illumination; and a detection module arranged to receive the reflected radiation and generate, for each pupil segment, pupil segment detection signals.

Abstract: A method for characterizing a surface, consisting of dividing the surface into pixels which are characterized by a parameter variation and defining blocks of the surface as respective groups of the pixels. The pixels are irradiated in multiple scans over the surface with radiation having different first polarization states. At least part of the radiation returning from the pixels is analyzed using second polarization states, to generate processed returning radiation. For each scan, block signatures of the blocks are constructed using the processed returning radiation from the group of pixels in each block. Also for each scan, a block signature variation is determined using the respective block signatures of the blocks, and, in response to the block signature variation, one of the first polarization states and at least one of the second polarization states are selected for use in subsequent examination of a test object.