Abstract: Disclosed is a method for manufacturing a monocrystalline semiconductor material of the nitride of a group 13 element, comprising a step of depositing at least one separation layer comprising an element M selected among Ge, Zr, Y, Si, Se, Sc, Mg, In, W, La, Ti, Ta and Hf, by epitaxial growth on a starting substrate; characterised in that an interface layer of formula MvAlxOyNz is deposited between the starting substrate and the separation layer, wherein: - the atomic indices x and z are greater than 0 and less than or equal to 1; and, - the atomic indices v and y are between 0 and 1; and - the sum y+z is greater than 0.9 and less than or equal to 1.5; and - the sum v+y is greater than or equal to 0.3 and less than or equal to 1.

Abstract: Process for the manufacture of a mesoporous product comprising the following successive steps: a) preparation of a slip comprising: a solvent, an additive, more than 4%, as percentage by volume based on the slip, of a powder formed of ceramic particles, b) oriented freezing of the slip, so as to form a block comprising ice crystals separated by walls, c) removal of the ice crystals from said frozen slip block, optionally removed from the mold, so as to obtain a porous preform, d) removal of the additive, so as to obtain a preformed mesoporous product, the additive and the amount of additive being chosen so that the additive is present in a mesopore-forming micellar phase in said walls, more than 25% by volume of said ceramic particles exhibiting a size less than twice the size of the micelles of said mesopore-forming micellar phase.

Abstract: Process for the manufacture of a mesoporous product comprising the following successive steps: a) preparation of a slip comprising: a solvent, an additive, more than 4%, as percentage by volume based on the slip, of a powder formed of ceramic particles, b) oriented freezing of the slip, so as to form a block comprising ice crystals separated by walls, c) removal of the ice crystals from said frozen slip block, optionally removed from the mold, so as to obtain a porous preform, d) removal of the additive, so as to obtain a preformed mesoporous product, the additive and the amount of additive being chosen so that the additive is present in a mesopore-forming micellar phase in said walls, more than 25% by volume of said ceramic particles exhibiting a size less than twice the size of the micelles of said mesopore-forming micellar phase.