Patents by Inventor Igeta Masonobu

Igeta Masonobu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
    Patent number: 7300891
    Abstract: A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electro-magnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: November 27, 2007
    Assignee: Tokyo Electron, Ltd.
    Inventors: Igeta Masonobu, Cory Wajda, Gert Leusink
  • Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation
    Patent number: 7265066
    Abstract: A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to collimated electro-magnetic (EM) radiation to anisotropically expose the film. The EM radiation can have a component having a wavelength less than about 500 nm. The EM source can include a multi-frequency source of radiation.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: September 4, 2007
    Assignee: Tokyo Electron, Ltd.
    Inventors: Igeta Masonobu, Cory Waida, Gert Leusink
  • Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation
    Publication number: 20060226519
    Abstract: A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to collimated electro-magnetic (EM) radiation to anisotropically expose the film. The EM radiation can have a component having a wavelength less than about 500 nm. The EM source can include a multi-frequency source of radiation.
    Type: Application
    Filed: March 29, 2005
    Publication date: October 12, 2006
    Inventors: Igeta Masonobu, Cory Waida, Gert Leusink