Abstract: This utility model integrates into the standard structure of a teardrop mini camper, a folding front door that generates a bathroom module. Usually in these vehicles, a rear door is used for the kitchen space, so the mini camper described herein incorporates a door of similar characteristics in its front part, where the drawbar is placed.

Abstract: This utility model integrates into the standard structure of a teardrop mini camper, a folding front door that generates a bathroom module. Usually in these vehicles, a rear door is used for the kitchen space, so the mini camper described herein incorporates a door of similar characteristics in its front part, where the drawbar is placed.

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract: The invention is based on the use of alpha-1 antitrypsin for the preparation of medicaments for the treatment of fibromyalgia, comprising the preparation of therapeutic concentrates of alpha-1 antitrypsin, in any form of administration tolerated by humans, the alpha-1 antitrypsin being obtained by purification of human plasma or being produced by recombinant or transgenic technology, with doses equal to or greater than 6 mg of alpha-1 antitrypsin per kg of body weight for a variable period of time.

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract: The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing material layers on the substrate. The chamber has an interior surface. The method further includes, between the transfers, cleaning the deposition chamber using an in situ ramped cleaning process when material layer deposits in the deposition chamber reaches a predefined thickness. The in situ ramped cleaning process comprises forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber in a presence of a plasma. The cleaning process further includes ramping a flow rate of the gaseous fluorocompound in a presence of the plasma to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface.

Abstract: An improvement to a Novellus HDP SPEED reactor chamber is described. An evacuation port of the Novellus SPEED Chamber is at one location in the chamber to remove injected cleaning gas from the chamber and there is a single input for cleaning gas connection into the chamber. In accordance an improvement a plurality of clean gas injectors is positioned on an adapter in the chamber and connected to the single input gas connection for distributing the cleaning gas in the chamber with the injectors spaced away from the evacuation port. The adapter is a U-shaped adapter and is positioned in the chamber with the adapter connected at the base to the single input gas connection. The adapter has two semicircular branch legs extending in opposite directions about the chamber to free ends that are connected to gas injectors. The free ends with the injectors are located in the chamber almost on the opposite end of the chamber from the evacuation port.

Abstract: The invention is based on the use of alpha-1 antitrypsin for the preparation of medicaments for the treatment of fibromyalgia, comprising the preparation of therapeutic concentrates of alpha-1 antitrypsin, in any form of administration tolerated by humans, the alpha-1 antitrypsin being obtained by purification of human plasma or being produced by recombinant or transgenic technology, with doses equal to or greater than 6 mg of alpha-1 antitrypsin per kg of body weight for a variable period of time.

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract: Maintaining a reactor chamber of a chemical vapor deposition system includes depositing layers on an inner surface of the reactor chamber, where the layers form an accumulation layer. When the accumulation layer reaches a specified thickness, a plasma clean cycle is performed by introducing cleaning gas into the reactor chamber. The volume of the cleaning gas used during one or more plasma clean cycles is calculated, where the volume indicates the volume of cleaning gas introduced into the reactor chamber. A notification is provided when the volume of the cleaning gas used during the plasma clean cycles has reached a predetermined volume.

Abstract: An improved Novellus Speed clean gas reactor chamber is described. An evacuation port of the Novellus SPEED Chamber is at one location in the chamber to remove injected cleaning gas from the chamber and there is a single input for cleaning gas connection into the chamber. In accordance an improvement a plurality of clean gas injectors is positioned on an adapter in the chamber and connected to the single input gas connection for distributing the cleaning gas in the chamber with the injectors spaced away from the evacuation port. The adapter is a U-shaped adapter and is positioned in the chamber with the adapter connected at the base to the single input gas connection. The adapter has two semicircular branch legs extending in opposite directions about the chamber to free ends that are connected to gas injectors. The free ends with the injectors are located in the chamber almost on the opposite end of the chamber from the evacuation port.