Abstract: A fast short circuit detection method for detection of a short circuit at a gate-controlled power switch, said method comprising the steps of providing a measurement signal in response to a voltage drop along a stray inductance of the gate-controlled power switch; and generating a short circuit detection signal if the provided measurement signal exceeds a reference voltage and the gate-controlled power switch is in a switched-on state.

Abstract: A method and apparatus are provided for balancing currents of two or more parallel-connected power semiconductor switches during an on-state of the switches. A control terminal of each switch is driven by a driver unit. The method includes determining ratios between the currents through the switches. For each switch, the method includes controlling the voltage at the control terminal on the basis of the ratios by controlling a level of a supply voltage of the driver unit of the switch, and after a turn-on commutation transient, modulating the output of the driver unit. The duty cycle of the modulation is controlled to minimize the time required for the transition of the voltage at the control terminal from the one voltage level to another.

Abstract: Unique systems, methods, techniques and apparatuses of a reverse-conducting IGBT (RC-IGBT) are disclosed. One exemplary embodiment is a circuit comprising a series connection of controllable switch components where at least one of the controllable switch components is an RC-IGBT. The circuit is operated by applying a pre-trigger pulse to the gate electrode of the RC-IGBT during reverse conduction of the RC-IGBT at a first time instant, the pre-trigger pulse corresponding to a turn-on gate pulse. Next, a turn-on gate pulse is applied at a second time instant to the other controllable switch component of the series connection for controlling the other controllable switch component to a conductive state such that the pre-trigger pulse and the turn-on gate pulse overlap, and ending the pre-trigger pulse after a delay time at the third time instant. The delay time is the time period when the turn-on gate pulse and the pre-trigger pulse overlap.

Abstract: A method and an arrangement of controlling a reverse-conducting IGBT (RC-IGBT) component in a circuit comprising a series connection of controllable switch components where at least one of the controllable switch components is an RC-IGBT and the other component is to be controlled to a conductive state. The method comprising applying a pre-trigger pulse to the gate electrode of the RC-IGBT during reverse conduction of the RC-IGBT at a first time instant (t1), the pre-trigger pulse corresponding to a turn-on gate pulse, applying a turn-on gate pulse at a second time instant (t2) to the other controllable switch component of the series connection for controlling the other controllable switch component to a conductive state such that the pre-trigger pulse and the turn-on gate pulse overlap, and ending the pre-trigger pulse after a delay time at the third time instant (t3), the delay time being the time period when the turn-on gate pulse and the pre-trigger pulse overlap.

Abstract: A method and apparatus are provided for balancing currents of two or more parallel-connected power semiconductor switches during an on-state of the switches. A control terminal of each switch is driven by a driver unit. The method includes determining ratios between the currents through the switches. For each switch, the method includes controlling the voltage at the control terminal on the basis of the ratios by controlling a level of a supply voltage of the driver unit of the switch, and after a turn-on commutation transient, modulating the output of the driver unit. The duty cycle of the modulation is controlled to minimize the time required for the transition of the voltage at the control terminal from the one voltage level to another.

Abstract: A method and apparatus are provided for a power semiconductor switch. A current through the switch is responsive to a control terminal voltage at a control terminal of the switch, and the control terminal voltage is driven by a driver unit. The method includes measuring or estimating the current based on a bond voltage of the switch, detecting a short circuit by comparing the measured or estimated current to a short circuit current limit, controlling an on-state voltage level of the control terminal voltage based on the comparison to limit the current through the switch during the short circuit, and controlling the control terminal voltage to an off-state voltage level to turn the switch off. The on-state voltage level voltage is controlled by pulse-width modulating the output of the driver unit. A switching frequency of the modulation is at least the cut-off frequency of low-pass characteristics of the control terminal.